pwm controller 1.5V Vcc
Abstract: PWM Controllers db7030 geyserville
Text: POWER MANAGEMENT: Switching Regulator PWM Controllers Drivers SYNCHRONOUS SWITCHING PWM CONTROLLERS Part Number Vcc Volts Iq Normal Mode mA Iq Sleep VID Prgm uA External MOSFET Driver Model 10 ADP3410 off: 0.925 to 2.00 Model Designator VRM Rev Level VID Prgm
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ADP3421
ADP3410
ADP3160
ADP3161
ADP3162
ADP3413
ADP3412
ADP3410
Page-158
pwm controller 1.5V Vcc
PWM Controllers
db7030
geyserville
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ADP3168
Abstract: mosfet 3067 ADP3205 ADP3415 "PWM Controllers" ADP3160 ADP3161 ADP3162 ADP3163 ADP3164
Text: POWER MANAGEMENT: Switching PWM Controllers SYNCHRONOUS SWITCHING PWM CONTROLLERS Part Number Vcc Volts Iq Normal Mode mA Iq Sleep Model Designator VID D/A Output Vout VRM Rev Level uA External MOSFET Driver Model VID Prgm 10 1 ADP3410 ADP3415 0.925 to 2.00
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ADP3410
ADP3415
Page-147
ADP3168
mosfet 3067
ADP3205
ADP3415
"PWM Controllers"
ADP3160
ADP3161
ADP3162
ADP3163
ADP3164
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sgsp531
Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92
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VN0640N2
TX106
IRF712
VN0340N2
MTD1N40
MTD1N40-1
RFP1N40
IRFF312
IRFF312
sgsp531
2sk76
irf33
unitrode
VN0340N5
sfn02806
stm231
stm331
650P
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VN1210N5
Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10
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RRF120
RRF520
UFN132
IRrj120
RRF522
SFN02802
SFN02812
SFN106A3
YTF520
IRF120
VN1210N5
BR 115N
sfn02202
RRF530
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MANCHESTER ENCODER, DECODER AND CVSD SYSTEM
Abstract: manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 CMX649 MICR505 20n10 voice activated switch project
Text: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX649 Wireless Voice Link Design Guide AN/2WR/649Des/2 November 2004 1 Introduction The CMX649 is an innovative adaptive delta modulation ADM voice codec that was designed to serve in advanced wireless voice links. The purpose of this document is
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CMX649
AN/2WR/649Des/2
MANCHESTER ENCODER, DECODER AND CVSD SYSTEM
manchester cvsd
delta modulation tutorial
Ultralife Batteries
variable slope delta modulation tutorial
DE6492
MICR505
20n10
voice activated switch project
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Untitled
Abstract: No abstract text available
Text: STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 £2 - 1 6A - T0-220/T0-220FP _STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP 16N E06 S TP 16N E06FP 60 V 60 V < 0.100 a < 0.100 a 16 A 11 A • . . . . . TYPICAL R D S ( o n ) = 0.08 Î2
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STP16NE06
STP16NE06FP
T0-220/T0-220FP
E06FP
STP16NE06/FP
O-22QFP
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Untitled
Abstract: No abstract text available
Text: S T Y 16N A 90 N - CHANNEL 900V - 0.5 ft - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET PRELIM IN ARY DATA TYPE STY 16N A90 • . . . . . . . V dss RDS on Id 900 V < 0.54 Q. 16 A TYPICAL RDS(on) = 0.5 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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Max247
ax247â
STY16NA90
Max247
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Untitled
Abstract: No abstract text available
Text: STU16NB50 N-CHANNEL 500V - 0.28CI - 15.6A-Max220 PowerMESH MOSFET TYPE V STU 16N B50 • . . . . . dss 500 V R D S o n Id < 0.33 Q. 15.6 A TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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STU16NB50
A-Max220
Max220
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16NE10
Abstract: No abstract text available
Text: STD16NE10 N - CHANNEL 100V - 0.07Q - 16A - IPAK/DPAK STripFET MOSFET TYPE V dss S TD 16N E10 . m . . . . . 100 V Id *DS on < 0.1 Q 16 A TYPICAL R ds(oii) = 0.07 Q EXCEPTIO NALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STD16NE10
O-251)
O-252)
O-251
O-252
16NE10
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STD16NE10
Abstract: No abstract text available
Text: STD16NE10 N - CHANNEL 100V - 0.07ft - 16A - IPAK/DPAK STripFET MOSFET TYP E V STD 16N E10 dss 100 V R d S o ii Id < 0.1 Q. 16 A . • TYPICAL RDS(on) =0.07 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED
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STD16NE10
STD16NE10
O-251)
O-252)
re017
0068771-E
O-252
0068772-B
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16N40E
Abstract: high power pulse generator with mosfet mosfet 16n 15
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 16N40E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS
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MTW16N40E/D
16N40E
340K-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTB16N25E/D
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TIC 122 Transistor
Abstract: TY16N80E TY16N y16n
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY16N 80E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te TMOS POWER FET 16 AMPERES 800 VOLTS This high volta ge M O S FET uses an advanced term inatio n
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16-NSO
Abstract: AX832 ax2003
Text: POWER MANAGEMENT BATTERY CHARGERS MULTI-FUNCTION SUPPLIES ★ir MAX845 ★ MAX2003 75 0m W isolated tran sfo rm er d river (N iC d/N iM H . tem p, slope detection) + M A X 2 00 3A (im p rov ed M A X 2003) M A X 4 71 /4 72 (cu rren t-sen se am p. fuel g au g e) (see O p A m p table)
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MAX2003
MAX845
1000-up
16-NSO
AX832
ax2003
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16N25E
Abstract: gsp5000 20F40
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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OE-05
0E-01
16N25E
gsp5000
20F40
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tp16n
Abstract: No abstract text available
Text: S G S -1H 0M S 0N IMOigœiILliera *® STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V dss R D S o n Id STP16N E06L S TP16N E06LFP 60 V 60 V < 0 .12 Q. < 0 .12 Q. 16 A 11 A • . . . . . TYPICAL RDS(on) = 0.09
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STP16NE06L
STP16NE06L/FP
STP16N
TP16N
E06LFP
O-22QFP
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eel 16n
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate
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TB16N25E
eel 16n
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n
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MTY16N80E/D
340G-02
O-264
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IRF7343 N
Abstract: RF710 IRF7343
Text: I , In terna tional I PD- 9.1709 IQR Rectifier IR F 7 3 4 3 p r e l im i n a r y HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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TH 82420
Abstract: C205Z1
Text: STP16NB25 STP16NB25FP N - CHANNEL 250V - 0.220Q - 16A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss RDS on Id STP16N B25 STP16NB25FP 250 V 250 V < 0 .2 8 Î2 < 0 .2 8 Q 16 A 8 A • TYPICAL RDS(on) = 0.220 Q. m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED
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STP16NB25
STP16NB25FP
T0-220/T0-220FP
STP16N
TH 82420
C205Z1
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ADG508
Abstract: No abstract text available
Text: ANALOG DEVICES 4/8 Channel Fault-Protected Analog Multiplexers ADG508F/ADG509F/ADG528F* F U N C T IO N A L B LO C K D IAG RA M S FEATURES Low On Resistance 300 i l typ Fast Switching Times t 0N 250 ns max t 0FF 250 ns max Low Power Dissipation (3.3 mW max)
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P-20A
ADG508
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4804c
Abstract: L4804C
Text: May 1999 PRELIMINARY ^Ék Micro Linear ML4804 Power Factor Correction and PWM Controller Combo GENERAL DESCRIPTION FEATURES The ML4804 is a controller for power factor corrected, switched mode power supplies. Rawer Factor Correction PFC allows the use of smaller, lower cost bulk
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ML4804
ML4804
IBC1000-3-2
ML4824,
4804c
L4804C
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Untitled
Abstract: No abstract text available
Text: A p r ili 9 97 PRELM M ARY ^Ék Micro Linear ML4901 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES TheM L 4901 h ig h c u rre n ts y n c h ro n o u s b u c k c o n tm H e rh a s b e e n d e sig n e d to p ro v id e h ig h efficien cy D C /t> C
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ML4901
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