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    MOSFET 12N10L Search Results

    MOSFET 12N10L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 12N10L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12N10

    Abstract: Mosfet 12N10L 12N10L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell


    Original     		12N10 12N10 O-220 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T O-251 12N10L-TN3-R 12N10G-TN3-R Mosfet 12N10L 12N10L PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original     		12N10 12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R O-220 QW-R502-737 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original     		12N10 12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R PDF

    12N10L

    Abstract: 12N10L-TA3-T 12N10
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original     		12N10 UT12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R O-220 O-252 12N10L 12N10 PDF

    12n10

    Abstract: Mosfet 12N10L mosfet VDS 30V ID 6A TO 252
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N10 Preliminary Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UT12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original     		12N10 UT12N10 O-252 12N10L-TN3-R 12N10G-TN3-R 12N10L-TN3-T 12N10G-TN3-T O-252 QW-R502-737 12n10 Mosfet 12N10L mosfet VDS 30V ID 6A TO 252 PDF

    Contextual Info: UNISONICTECHNOLOGIESCO., LTD 12N10 Power MOSFET 1 2 A, 1 0 0 V N -CH AN N EL POWER M OSFET  DESCRI PT I ON The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


    Original     		12N10 12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R QW-R502-737 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF