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    MOSFET 100V Search Results

    MOSFET 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 100V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n7224U

    Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U
    Text: PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U HEXFET POWER MOSFET [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 100Volt, 0.070Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PD-91547B IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592] 100Volt, 2n7224U IRFN150 JANTX2N7224U JANTXV2N7224U PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    transistor irf510

    Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
    Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark


    Original     		IRF510 IRF51 O220AB IRF510 transistor irf510 IRF510 MOSFET IRF510 Power Mosfet transistor PDF

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		IRF520 IRF52 O220AB IRF520 irf52 0 PDF

    2N6782

    Abstract: 2N67 TB334
    Text: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET


    Original     		O205AF 2N6782 2N6782 2N67 TB334 PDF

    BUZ72A

    Abstract: mosfet .5a 100v
    Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features


    Original     		BUZ72A O220AB TA17401. BUZ72A mosfet .5a 100v PDF

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		IRFP150 sil 5102 IRFP150 TB334 PDF

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541 PDF

    IRFP150N

    Abstract: No abstract text available
    Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,


    Original     		IRFP150N O-247 IRFP150N PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		19N10V QW-R502-914, PDF

    Mosfet N-Channel 19N10, TO-251

    Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		19N10 QW-R502-261 Mosfet N-Channel 19N10, TO-251 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET PDF

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350 PDF

    19n10l

    Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		19N10 QW-R502-261 19n10l Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R PDF

    19n10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		19N10 QW-R502-261 19n10 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar


    Original     		7N10Z 7N10Z QW-R502-762 PDF

    IRFG110

    Abstract: JANTX2N7334 JANTXV2N7334 MO-036AB
    Text: PD-90396H POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International


    Original     		PD-90396H MO-036AB) IRFG110 JANTX2N7334 JANTXV2N7334 MIL-PRF-19500/597 150mH MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 MO-036AB PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		QW-R502-394 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International


    Original     		90495G O-254AA) IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 MIL-PRF-19500/595 O-254AA. MIL-PRF-19500 PDF

    mosfet 50a 25v to 252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT20N10 Power MOSFET 20A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT20N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching


    Original     		UTT20N10 UTT20N10 UTT20N10L-TA3-Tat QW-R502-628 mosfet 50a 25v to 252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF520 Preliminary Power MOSFET 9.2A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF520 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high Input Impedance and high switching speed.


    Original     		UF520 UF520 UF520L-TA3-T UF520G-TA3-T QW-R502-659 PDF

    jantx2N7236

    Abstract: IRFM9140 JANS2N7236 JANTXV2N7236 c 1384
    Text: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International


    Original     		90495G O-254AA) IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 MIL-PRF-19500/595 O-254AA. MIL-PRF-19500 jantx2N7236 IRFM9140 JANS2N7236 JANTXV2N7236 c 1384 PDF

    IRFN9140

    Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
    Text: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International


    Original     		91553F IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U MIL-PRF-19500/595 -100A/ -100V, IRFN9140 JANS2N7236U JANTX2N7236U JANTXV2N7236U PDF

    Mosfet N-Channel 19N10, TO-251

    Abstract: 19n10l 19N10
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		19N10 QW-R502-261 Mosfet N-Channel 19N10, TO-251 19n10l 19N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90495F POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International


    Original     		90495F O-254AA) IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 MIL-PRF-19500/595 O-254AA. MIL-PRF-19500 PDF