MOBILE GSS BOARD Search Results

AXE switch ERICSSON commands

Abstract: The SDH interface in AXE axe 10 ETC5 SDXC protocol ericsson msc et bsc ericsson bts operation and maintenance Mobile switching center ericsson smux 155 Transit Switching Center ericsson SDXC
Contextual Info: The SDH interface in AXE Jan Hopfinger, Ohan Khodaverdian and Erik Saure The SDH standard was formulated to alleviate the shortcomings operators faced in PDH, and was originally introduced into transmission networks. Today, however, given a more widespread use of SDH transport networks, it makes

byb 501

Abstract: BYB 202 AXE switch ERICSSON BYB 501 220 installation cabinet byb 202 ericsson bsc RPB 202 connect ericsson bsc to msc Ericsson Core Network BSC ERICSSON
Contextual Info: New hardware in AXE – The group switch Ulf Hansson and Terenzio Paone Within the framework of the most recent AXE hardware development programme, products that relate to the group switch subsystem GSS have been rationalised extensively. The main objectives of this work – which

2SK410

Contextual Info: High-Gain, High-Output RI7 Power MOS FET Series ain Uses Features • Mobile com m unication • High power, high gain, high effi­ base stations, broadcasting ciency stations, relay sta­ • Tw o-elem ent pack­ tions, wireless equip­ ages suitable for pushH ig h ga in , h i g h e f f i ­

N-6820

Contextual Info: Agilent N6841A RF Sensor for Signal Monitoring Networks Data Sheet It’s a big spectrum out there, and you need serious help to sort it all out… Key Features • Environmentally rugged IP67-rated weatherproof enclosure. Sealed unit with no moving internal parts

byb 501

Abstract: ericsson msc et bsc IOG11 IOG20 et155 axe 10 ETC5 AXE switch ERICSSON BLOCK DIAGRAM AXE switch ERICSSON STP ericsson IOG11 ethernet
Contextual Info: GDM-based generation of AXE core switching devices Jan Hopfinger and Björn Sundelin The generic device magazine concept was developed to fully exploit the advantages of the rationalized group switch and AXE core switching devices. The idea of a standard, equipped magazine has evolved to promote

Contextual Info: fax id: 3522 CY2252 Mobile Pentium Processor Compatible Clock Synthesizer/Driver Features • Multiple clock outputs to meet requirements of mobile systems using Pentium™ processors — Five CPU clocks @ 66.66 MHz, 60.0 MHz, 50.0 MHz or 33.33 MHz pin selectable

Contextual Info: IRF7809/IRF7811 International IöR Rectifier Provisional • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • New CopperStrap Interconnect for Lower Electrical and Thermal Resistance • Low Conduction Losses • Low Switching Losses

ior 481 mosfet

Abstract: marking XF n channel mosfet IOR MOSFET
Contextual Info: P D - 91746 P D - 91747 In te rn a tio n a l Rectifier IRF7805/IRF7807 ICR PRELIMINARY HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses

M2SK3295

Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
Contextual Info: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value

42A9

Contextual Info: Thai H E W L E T T ' mL'HA PA C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • EFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. P mb , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control

X-3002

Contextual Info: Who1 H E W L E T T münÆ P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22dBmTyp.PldB, +23 dBm TyP psat@900 MHz • 50 dB Typ. Power Control

Contextual Info: Whß1 H E W L E T T WLUM PA C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 F eatures • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control

HPMX-3002

Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

HPMX3002

Abstract: HPMX-3002
Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features Plastic S0-8 Package • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

Contextual Info: What wL'tiM HEW LETT PACKARD Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC M edium Pow er Am plifier • 150-960 MHz O perating Range • +22 dBm Typ. Phk , +23 dBm Typ. P sat @ 900 MHz • 50 dB Typ. Pow er Control

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation

gamma

Contextual Info: S E M I C O N D U C T O R rest i W I R E L E S S U U / C O M M U N I C A T I O N S . I N C TQ9122N Block Diagram Low-Noise Amplifier Features • 100 -2500 MHz operation Product Description The TQ9122 Low-Noise Amplifier is part of TriQuint's MMIC Downconverter Building Block

Contextual Info: FH101-G High Dynamic Range FET Applications • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security SOT-89 Package Product Features • • • • • • • • Product Features 50 – 4000 MHz Low Noise Figure 18 dB Gain

MAR 544 MOSFET TRANSISTOR

Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically

mrf5015

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

SKY77526

Abstract: SKY77512-xx sky77526-xx S1336 S1337 S-1340 SKY*NP sky77512 sky77506
Contextual Info: PRELIMINARY DATA SHEET SKY65329-NP: 900 MHz Front-End Module Applications Description • Paging Skyworks SKY65329-NP is a fully matched, high-efficiency RF Front-End Module FEM with 900 MHz transmit and receive paths. There are also routing switches to connect auxiliary

Contextual Info: SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. ID (A) 0.028 at VGS = 4.5 V 4.5 a 0.033 at VGS = 2.5 V 4.5 a 0.042 at VGS = 1.8 V 4.5 a 0.054 at VGS = -4.5 V

Contextual Info: 2 3 11 T R I Q P WIRELESS U I N T S E M I C O N D U C T O R , I N C C É M b k iï COMMUNICATIONS TQ9122N Block Diagram Low-Noise Amplifier Features Product Description • The TQ 9122 Low -N oise A m plifie r is part of TriQ uint's M M IC D ow nconverter B u ilding