MOBIL IC CODE Search Results

MOBIL IC CODE Result Highlights (5)

Part	Manufacturer	Description
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
SCL3400-D01-1	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor

MOBIL IC CODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TDA1305 equivalent Abstract: Dream SAM97XX IC 4804 reverb Processor IC SAM9755 TDA1311 MIDI Dream MOBIL 33 dream sam Text: SAM9755 Mobil Phone Synthesizer OVERVIEW The SAM9755 integrates into a single chip a SAM97xx core 64 slots DSP + 16bit processor , a 32k x 16 RAM and glue logic. With addition of an external ROM or FLASH and a stereo DAC, a complete MIDI sound unit can be built, including reverb	Original	SAM9755 SAM9755 SAM97xx 16bit 28MHz 16Mega TDA1305 equivalent Dream IC 4804 reverb Processor IC TDA1311 MIDI Dream MOBIL 33 dream sam	PDF
C4814 Abstract: No abstract text available Text: C4814 Low EM I Clock Generator with f C for M obil Pentium System Boards A p p ro ve d P roduct PRODUCT FEA TURES FREQU ENCYSELECTUON TABLE CPU • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock	OCR Scan	C4814 48-pin C4814EYB IMIC4814EYB C4814	PDF
Untitled Abstract: No abstract text available Text: ËÊÊË •ir « ^ C4814 mm « Low EMI Clock Generator with f C for Mobil Pentium System Boards Approved Product PRODUCT FEA TURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock Up to 8 SDRAM clocks for 4 mobile SO DIMMs.	OCR Scan	C4814 C4814EYB IMIC4814EYB	PDF
opb 3902 Abstract: esis power ups RCA Solid State amplifier TETRA TETRA radio HT-200R RCA SOLID STATE sds ts2 TETRA monitoring audi mmi Text: 3900 Series Digital Radio Test Set TETRA Option Manual 1002-4401-3P0 Issue-8 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign	Original	1002-4401-3P0 syst91] 1002-4401-3P0* opb 3902 esis power ups RCA Solid State amplifier TETRA TETRA radio HT-200R RCA SOLID STATE sds ts2 TETRA monitoring audi mmi	PDF
BFP420F Abstract: BFP520F Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability	Original	BFP520F BFP420F BFP520F	PDF
BFP183W Abstract: BGA420 marking rhs Text: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP183W OT343 BFP183W BGA420 marking rhs	PDF
DIN 6784 c1 Abstract: BCR108T BFR380T E6327 SC75 Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation 2 Ideal for low phase noise oscillators up to 3.5 GHz 1 Low noise figure: 1.1 dB at 1.8 GHz VPS05996	Original	BFR380T VPS05996 DIN 6784 c1 BCR108T BFR380T E6327 SC75	PDF
transistor marking RHs Abstract: transitor RF 98 BFR183F Text: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR183F transistor marking RHs transitor RF 98 BFR183F	PDF
BCR108T Abstract: BFR183T SC75 Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR183T BCR108T BFR183T SC75	PDF
BCR108T Abstract: BFR182T SC75 Text: BFR182T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR182T BCR108T BFR182T SC75	PDF
BCR108W Abstract: BFR182W Text: BFR182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR182W OT323 BCR108W BFR182W	PDF
BFP181R Abstract: marking code RFs Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP181R OT143R BFP181R marking code RFs	PDF
BFT91 Abstract: BCW66 BFR92P BFR92P equivalent E 94733 Text: BFR92P NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and 2 3 fast non-saturated switches at collector currents from 0.5 mA to 20 mA 1 • Complementary type: BFT91 PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	BFR92P BFT91 150may BFT91 BCW66 BFR92P BFR92P equivalent E 94733	PDF
RCs INFINEON Abstract: No abstract text available Text: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description	Original	BFR193F RCs INFINEON	PDF

7449 Abstract: BFP181 Text: BFP181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP181 OT143 7449 BFP181	PDF
029998 Abstract: BFP196W BGA420 38128 Text: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz	Original	BFP196W OT343 029998 BFP196W BGA420 38128	PDF
infineon marking L2 Abstract: BFR193L3 Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR193L3 infineon marking L2 BFR193L3	PDF
BFP181 Abstract: BFP183 Text: BFP183 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP183 OT143 BFP181 BFP183	PDF
BFR193L3 Abstract: BFR380L3 marking FC Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description	Original	BFR380L3 BFR193L3 BFR380L3 marking FC	PDF
BCR108T Abstract: BFR181T SC75 Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR181T BCR108T BFR181T SC75	PDF
87757 Abstract: BFR181 BCW66 Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR181 87757 BFR181 BCW66	PDF
BFR181W Abstract: BCW66 Text: BFR181W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR181W OT323 BFR181W BCW66	PDF
BFP181R Abstract: BFP182R Text: BFP182R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP182R OT143R BFP181R BFP182R	PDF
BFP520 Abstract: BGA420 Text: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability	Original	BFP520 OT343 BFP520 BGA420	PDF

MOBIL IC CODE Search Results

MOBIL IC CODE Result Highlights (5)

MOBIL IC CODE Datasheets Context Search

TDA1305 equivalent

C4814

Untitled

opb 3902

BFP420F

BFP183W

DIN 6784 c1

transistor marking RHs

BCR108T

BCR108T

BCR108W

BFP181R

BFT91

RCs INFINEON

7449

029998

infineon marking L2

BFP181

BFR193L3

BCR108T

87757

BFR181W

BFP181R

BFP520