RF Power Amplifier 125KHz
Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966AX
RFHA5966A
4500m
4000m
41dBm
RFHA5966A
1N4148,
RF Power Amplifier 125KHz
1n4148 die
GAAS FET AMPLIFIER x-band 10w
x-Band Hemt Amplifier
95GHZ
10Ghz RF Power 10w amplifier
"15 GHz" power amplifier 41dBm
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MMIC X-band amplifier
Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966A
RFHA5966AX
41dBm
RFHA5966A
Radar023
1N4148,
DS111023
MMIC X-band amplifier
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ALH102C
Abstract: Low Noise HEMT ALH102 AL-H ALH IC
Text: TRYw Superior Performance from the Latest MMIC Technology Low Noise HEMT MMIC Amplifier ALH102C Darlington Amplifier Series • RF Frequency: 2 to 20 GHz • Low Noise Figure < 3.5 dB • 10 dB Gain • Unconditionally Stable • Low DC Power Consumption •
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ALH102C
ALH102C
006/J*
9701455-0027-S-057
Low Noise HEMT
ALH102
AL-H
ALH IC
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MCH185A101JK
Abstract: SGL-0622Z LL1608-FS56NJ TAJB105KLRH
Text: SGL-0622Z SGL-0622Z 5MHz to 4000MHz Low Noise MMIC Amplifier Silicon Germanium 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 2x2 Product Description Features The SGL-0622Z is a low noise, high gain MMIC LNA designed for low power
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SGL-0622Z
4000MHz
SGL-0622Z
100pF
MCH185A101JK
LL1608-FS56NJ
TAJB105KLRH
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amplifier TRANSISTOR 14 GHZ
Abstract: EHT09218
Text: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB
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EHT09219
amplifier TRANSISTOR 14 GHZ
EHT09218
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amplifier TRANSISTOR 12 GHZ
Abstract: amplifier TRANSISTOR 14 GHZ transistor amplifier 3 ghz
Text: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB
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EHT09219
amplifier TRANSISTOR 12 GHZ
amplifier TRANSISTOR 14 GHZ
transistor amplifier 3 ghz
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Untitled
Abstract: No abstract text available
Text: SGL0622Z SGL0622Z 5MHz to 4000MHz Low Noise MMIC Amplifier Silicon Germanium 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM Package: QFN, 2x2 Product Description Features The SGL0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection
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SGL0622Z
4000MHz
SGL0622Z
100pF
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SGL-0622Z
Abstract: SGL0622ZPCK1 MCH185A101JK SGL0622ZSQ
Text: SGL0622Z SGL0622Z 5MHz to 4000MHz Low Noise MMIC Amplifier Silicon Germanium 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM Package: QFN, 2x2 Product Description Features The SGL0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection
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SGL0622Z
4000MHz
SGL0622Z
100pF
TAJB105KLRH
MCH185C122KK
SGL-0622Z
SGL0622ZPCK1
MCH185A101JK
SGL0622ZSQ
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HEMT Amplifier
Abstract: amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor
Text: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm
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EHT09206
HEMT Amplifier
amplifier TRANSISTOR 12 GHZ
MMIC POWER AMPLIFIER hemt
"Marking 12" mmic
mmic "Marking 12"
marking hpa
GaAs 12 GHZ gain
2.4 ghZ rf transistor
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bond pull test
Abstract: HEMT marking P
Text: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm
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EHT09206
bond pull test
HEMT marking P
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Untitled
Abstract: No abstract text available
Text: T485BMPA1 GaAs 38 GHz Medium Power Amplifier MMIC • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 13 dB • P i dB > 1 7 dB m • Psat > 19 dBm
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T485BMPA1
QS9000
IS09001
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Untitled
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
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CMPA2560025F
Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
Cree Microwave
c08bl242x
C08BL242X-5UN-X0T
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Untitled
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
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CMPA5585025F
Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
power transistor gaas x-band
CMPA5585025F-TB
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Untitled
Abstract: No abstract text available
Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon
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CMPA0060002D
CMPA0060002D
CMPA00
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vco 10GHz
Abstract: 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
Text: RFVC1801 RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE VS=5V, T=25°C 12 6 11 Features 5 Evaluation Board 10 4 9
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RFVC1801
10GHz
-96dBc/Hz
100kHz
DS100615
vco 10GHz
10GHz OSCILLATOR
RFVC1801
VCO 5GHz
10GHZ
wideband vco mmic
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transistor 2xw
Abstract: 38GHz T485B S11 INFINEON power transistor gaas
Text: T485B_MPA_2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P-1dB > 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm
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38GHz
QS9000
ISO9001
transistor 2xw
T485B
S11 INFINEON
power transistor gaas
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Untitled
Abstract: No abstract text available
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
6002ree
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CMPA2560025F
Abstract: CMPA2560025F-TB
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
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CMPA2560025F
Abstract: CMPA2560025F-TB JESD22 A114D
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025F
CMPA2560025F-TB
JESD22
A114D
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Untitled
Abstract: No abstract text available
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025F
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CMPA2560025F
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
CMPA2560025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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