CMPA5585025F Search Results

CMPA5585025F Price and Stock

Filter by Manufacturer


MACOM CMPA5585025F-AMP AMPLIFIER, 5.5-8.5GHZ, CMPA55850
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA5585025F-AMP	Box			2	1 - 10 $1276.44 100 $1276.44 1000 $1276.44 10000 $1276.44	Buy Now

CMPA5585025F Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CMPA5585025F		Cree	RF Amplifiers, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA		Original	PDF
CMPA5585025F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA		Original	PDF

CMPA5585025F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
CMPA5585025F Abstract: power transistor gaas x-band CMPA5585025F-TB Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
RF3-50 Abstract: POWER456 Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
x-Band Hemt Amplifier Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier	PDF