MMDF2N02ER2G Search Results
MMDF2N02ER2G Price and Stock
onsemi MMDF2N02ER2GMOSFET 2N-CH 25V 3.6A 8SOIC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMDF2N02ER2G | Reel | 2,500 |
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MMDF2N02ER2G | Reel | 111 Weeks | 2,500 |
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MMDF2N02ER2G Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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MMDF2N02ER2G |
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Power MOSFET 2 Amps, 25 Volts; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500 | Original |
MMDF2N02ER2G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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f2n02Contextual Info: MMDF2N02E Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices |
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MMDF2N02E MMDF2N02E/D f2n02 | |
f2n02
Abstract: AN569 MMDF2N02E MMDF2N02ER2 MMDF2N02ER2G
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MMDF2N02E MMDF2N02E//D f2n02 AN569 MMDF2N02E MMDF2N02ER2 MMDF2N02ER2G | |
f2n02Contextual Info: MMDF2N02E Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices |
Original |
MMDF2N02E MMDF2N02E/D f2n02 |