MMBV2109LT1 EQUIVALENT Search Results

diode mv2105

Abstract: marking 4U diode On Semiconductor Silicon Tuning MMBV2109LT1 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2104
Contextual Info: Silicon Tuning Diode MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning

MV2104

Abstract: MV2101 MV2111 MV2115 MV2105 MMBV2109
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability

MMBV2107LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical

Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical

MMBV2103LT1

Abstract: MV2104 MMBV2101LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2105 MV2108
Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical

MV2107

Abstract: mbv2109 MV2113
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PACKAGE for high volum e require­ ments of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

MV2104

Abstract: MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2105 MV2108
Contextual Info: ON Semiconductort Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods.

mv2105

Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

V2101

Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

V2103

Abstract: V2109
Contextual Info: SILICON EPICAP DIODES . . . designed in the popular P LA S TIC PA CK A G E for high volum e require­ m ents of FM Radio and TV tuning and A FC , general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning m ethods.

ct 1061

Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8−100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

SOT23 MARKING code 4W

Abstract: MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

MV2105

Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

2n3819 replacement

Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical

2n1613 equivalent

Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste