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    MMBT9012H

    Abstract: MMBT9012G MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


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    PDF MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 500mA, 50MHz MMBT9012H

    MMBT9013G

    Abstract: MMBT9013H MMBT9012G MMBT9012H
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


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    PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013 500mA, 50MHz MMBT9013H

    MMBT9012H

    Abstract: MMBT9012HLT1 MMBT9012G MMBT9012 MMBT9013
    Text: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


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    PDF MMBT9012GLT1 MMBT9012HLT1 MMBT9013GLT1 MMBT9013HLT1 OT-23 500mA, 50MHz MMBT9012H MMBT9012HLT1 MMBT9012G MMBT9012 MMBT9013

    MMBT9012G

    Abstract: MMBT9012H MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


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    PDF MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 MMBT9012G MMBT9012H

    MMBT9013H

    Abstract: MMBT9013G MMBT9012G MMBT9012H
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


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    PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013G MMBT9013H

    MMBT9013H

    Abstract: MMBT9012G MMBT9012H MMBT9013G
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


    Original
    PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013G MMBT9013H

    MMBT9012G

    Abstract: MMBT9012H
    Text: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original
    PDF MMBT9012GLT1 MMBT9012HLT1 MMBT9013GLT1 MMBT9013HLT1 OT-23 500mA, 50MHz MMBT9012G MMBT9012H

    MMBT9012G

    Abstract: MMBT9012H MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


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    PDF MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 MMBT9012G MMBT9012H

    mmbt9013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


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    PDF MMBT9013 625mW) 500mA) MMBT9012 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R OT-23 QW-R206-021 mmbt9013

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3  FEATURES 2 *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


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    PDF MMBT9013 625mW) 500mA) MMBT9012 OT-23 O-236) MMBT9013G-x-AE3-R QW-R206-021

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MMBT9013 NPN SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ FEAT U RES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity.


    Original
    PDF MMBT9013 625mW) 500mA) MMBT9012 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R OT-23 QW-R206-021