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    74c929

    Abstract: MM74C929 74C930 mm74c930 MM54C930 54c929 1/ci 74c930
    Text: MM54C929/MM74C929, MM54C930/MM74C930 1024-Bit Static Silicon Gate CMOS RAMs General Description The MM54C929/MM74C929 and MM54C930/MM74C930 1024 x 1 random access read/write memories are manuĀ­ factured using silicon-gate CMOS technology. These RAMs are specifically designed to operate from standard


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    PDF 54C929/ 74C929, 47C930/ 74C930 MM54C929/MM74C929, MM54C930/MM74C930 1024-Bit MM54C929/MM74C929 MM54C929/M 74c929 MM74C929 74C930 mm74c930 MM54C930 54c929 1/ci 74c930

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401