MJE340 350 Search Results

MJE340 350 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJE15020 Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment	Original	MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698	PDF
ST1803DFP Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D	Original	OT-32 O-126 BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 ST1803DFP BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent	PDF
Untitled Abstract: No abstract text available Text: Power Transistors Part No. Polarity Bipolar Transistors VCEO IC PC V (A) (W) hFE @ VCE & IC Min. Max. VCE IC (V) VCE(sat) @ IC (A) Max. (V) IC fT @ IC IC (A) Min. (MHz) (A) MJE340 NPN 300 0.5 20.0 30 240 10 0.05 - - - - MJE350 PNP 300 0.5 20.0 30 240 10	Original	MJE340	PDF
2sd880 equivalent Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They	Original	MJE5850, MJE5851 MJE5852 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sd880 equivalent tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100	PDF
2SD418 Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,	Original	MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023	PDF
BU108 Abstract: TIP105 Darlington transistor BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —	Original	MJE2361T MJE2360T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 TIP105 Darlington transistor BDX54 BU326 BU100	PDF
2SA1046 Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc	Original	2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT	PDF
2SA1046 Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.	Original	2N6251 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936	PDF
TRANSISTOR BC 208 Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc	Original	MJE3439 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR BC 208 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
application MJ10023 Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,	Original	MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 application MJ10023 BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56	PDF
MJ15003 300 watts amplifier Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications	Original	MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419	PDF
BU108 Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS	Original	2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801	PDF

transistor 3569 Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —	Original	Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033	PDF
transistor MJ2501 Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc	Original	MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100	PDF
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000	PDF
BU108 Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc	Original	BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100	PDF
2SC1419 Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.	Original	MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108	PDF
Motorola case 77 Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc	Original	MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100	PDF
2SA1046 Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903	PDF
2SC124 Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS	Original	2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100	PDF
JE350 Abstract: je350 transistor je-350 Text: rzz SGS-THOMSON Ä T# m je 34o M J E 350 « « L E M « ! COMPLEMETARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES A PP LICA TIO N S • LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT D ESCRIP TIO N The MJE340 is a silicon epitaxial planar NPN	OCR Scan	MJE340 OT-32. MJE350. JE350 je350 transistor je-350	PDF
350T Abstract: SGS340 Text: 7 ^ 2 3 7 005=1003 SCS-THOMSON ^ HILiCT@[fflD@§ S G S-TH0M S0N b • ^ T '3 3 ' 0 °\ MJ E340/T/SGS340 MJE350/T/SGS350 30E D HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi taxial planar NPN transistors intended for use in	OCR Scan	E340/T/SGS340 MJE350/T/SGS350 MJE340, MJE340T, SGS340 O-125, O-220 OT-82 MJE350, MJE350T, 350T	PDF

MJE340 350 Search Results

MJE340 350 Datasheets Context Search

MJE15020

ST1803DFP

Untitled

2sd880 equivalent

2SD418

BU108

2SA1046

2SA1046

TRANSISTOR BC 208

MJE494

2SD669 equivalent

application MJ10023

MJ15003 300 watts amplifier

BU108

transistor 3569

transistor MJ2501

automotive ignition tip162

BU108

2SC1419

Motorola case 77

2SA1046

2SC124

JE350

350T