MJE253 TRANSISTOR Search Results

mje253

Contextual Info: MJE253 Complementary Silicon Power Plastic Transistors 11.23 Transistors Transistors . Page 1 of 1 Enter Your Part # Home Part Number: MJE253 Online Store MJE253 Diodes Complementary Silicon Power Plastic Transistors Transistors Integrated Circuits Optoelectronics

transistor MJE243 equivalent

Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —

mje243

Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS

mje253

Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJE243G

Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

mje243 transistor

Abstract: MJE253 MJE243 equivalent MJE243
Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

JE253

Abstract: JE243 JE233
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors MJE243* . . . designed for low power audio amplifier and low-current, high-speed switching applications. MJE253* NPN PNP • High Collector-Emitter Sustaining Voltage —

mje243

Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
Contextual Info: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —

MJE243

Abstract: MJE253 MJE243 equivalent transistor MJE243 equivalent mje243 transistor mje253 transistor 1N5825 MSD6100
Contextual Info: ON Semiconductort NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

MJE243G

Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
Contextual Info: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

MJE243

Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

Contextual Info: MJE243 NPN , MJE253 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • http://onsemi.com 4.0 AMPERES POWER TRANSISTORS

MJE243

Abstract: MJE253 to126 pin out
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

MJE243 MOTOROLA

Abstract: MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100
Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

MJE243

Abstract: transistor MJE243 equivalent to126 pin out MJE253 mje243 transistor
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package EC B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications

je240

Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
Contextual Info: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

mje253

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Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

JE243

Abstract: JE253 je 243 Transistor 834
Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •

2N3055 plastic

Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

tip122 tip127 audio amp

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc