MJ15024
Abstract: mj15022
Text: MJ15022 NPN , MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. http://onsemi.com Features • • • • High Safe Operating Area High DC Current Gain
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MJ15022
MJ15024
MJ15022
MJ15024
MJ15023
MJ15025
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BU108
Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —
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MJ15022
MJ15024
MJ15024
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BU108
MJ15024 MOTOROLA transistor
2N3055 transistor MJ15022
BDX54
MJ15024 MJ15025
BUV11 equivalent
application notes MJ15024
BU326
BU100
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MJ15025
Abstract: MJ15023 MJ-15025 mj15024 MJ-15023 pnp 200v MJ15022
Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION •With TO-3 package ·Complement to type MJ15022; MJ15024 ·Excellent safe operating area ·High DC current gain hFE = 15 Min @ IC = 8 Adc APPLICATIONS
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MJ15023
MJ15025
MJ15022;
MJ15024
MJ15023
-200V;
MJ15025
MJ-15025
mj15024
MJ-15023
pnp 200v
MJ15022
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mj15024 transistor
Abstract: mj15024 transistor MJ15025 DC DC converter 5v to 200V ic MJ15024 pdf data sheet transistor Ic 1A datasheet NPN MJ15025
Text: NPN MJ15024 PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 ! High Current Capability ! High Power Dissipation ! Complementary to MJ15025 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MJ15024
MJ15025
mj15024 transistor
mj15024
transistor MJ15025
DC DC converter 5v to 200V ic
MJ15024 pdf data sheet
transistor Ic 1A datasheet NPN
MJ15025
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DC DC converter 5v to 200V ic
Abstract: 5V to 200V dc dc converter mj15024 MJ15025 transistor MJ15024
Text: PNP MJ15025 PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 ! High Current Capability ! High Power Dissipation ! Complementary to MJ15024 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MJ15025
MJ15024
-200V
DC DC converter 5v to 200V ic
5V to 200V dc dc converter
mj15024
MJ15025
transistor MJ15024
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MJ15025
Abstract: mj15024 mj15025 datasheet MJ-15025 MJ15022 MJ15023
Text: Inchange Semiconductor Product Specification MJ15023 MJ15025 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15022; MJ15024 ・Excellent safe operating area ・High DC current gain hFE = 15 Min @ IC = 8 Adc APPLICATIONS
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MJ15023
MJ15025
MJ15022;
MJ15024
MJ15023
-50Vdc
-80Vdc
MJ15025
mj15024
mj15025 datasheet
MJ-15025
MJ15022
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mj15022
Abstract: mj15024 MJ-15024 MJ15023 MJ15025 MJ-15022
Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION •With TO-3 package ·Complement to type MJ15023; MJ15025 ·Excellent safe operating area ·High DC current gain hFE = 15 Min @ IC = 8 Adc APPLICATIONS
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MJ15022
MJ15024
MJ15023;
MJ15025
MJ15022
50Vdc
80Vdc
mj15024
MJ-15024
MJ15023
MJ15025
MJ-15022
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mj15024
Abstract: mj15022 MJ-15024 MJ15022 equivalent MJ15023 MJ15025
Text: Inchange Semiconductor Product Specification MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15023; MJ15025 ・Excellent safe operating area ・High DC current gain hFE = 15 Min @ IC = 8 Adc APPLICATIONS
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MJ15022
MJ15024
MJ15023;
MJ15025
MJ15022
50Vdc
80Vdc
mj15024
MJ-15024
MJ15022 equivalent
MJ15023
MJ15025
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mj15024
Abstract: MJ15022 MJ15023 MJ15025 MJ-15024
Text: Product Specification www.jmnic.com MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15023 MJ15025 ・Excellent Safe Operating Area ・High DC Current Gain hFE = 15 Min @ IC = 8 Adc APPLICATIONS ・Designed for high power audio, disk head
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MJ15022
MJ15024
MJ15023
MJ15025
MJ15022
50Vdc
80Vdc
mj15024
MJ15025
MJ-15024
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70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
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2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
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MJ15023 EQUIVALENT
Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —
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MJ15023
MJ15025
MJ15025
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
MJ15023 EQUIVALENT
MJ15024 MJ15025
BU108
2SC1943
2SC1419
BU326
BU100
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MJ15025
Abstract: No abstract text available
Text: MJ15023 PNP , MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. http://onsemi.com Features • • • • High Safe Operating Area High DC Current Gain
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MJ15023
MJ15025
MJ15023
MJ15025
MJ15022
MJ15024
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MJ3001 equivalent
Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
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MJ2955
2N3055)
MJ2955A
2N3055A)
MJ2500
MJ2501*
MJ3000
MJ3001*
TIP73B
TIP74
MJ3001 equivalent
MJ3000 equivalent
2sc1096 equivalent
BU108
MJ3000 circuit
MJ2955 2n3055 200 watts amplifier
BDX54
MJ2501
MJ2955 replacement
2n3055 replacement
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motorola MJ15001
Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
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MJ15001
MJ15002
MJ15002
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
motorola MJ15001
BU108
equivalent to tip162
BDX54
D45H11 equivalent replacement
2sd217
BU326
BU100
REPLACEMENT BD139
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2SC105
Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2N4918,
2N4919,
2N4920
2N4921
2N4923*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
2SC105
2sd718 amplifier
2N4923 MOTOROLA
bd139 equivalent transistor
2SA1046
2SC1629 equivalent
bd139 Complement
ST BDW83C
2SC108
BU326A equivalent
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All similar transistor 2sa715
Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc
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BD243B,
BD244B
BD243C,
BD244C
BD243B
BD243C*
BD244C*
TIP73B
TIP74
All similar transistor 2sa715
2N3055
BU108
transistor BC 153
2SA1046
BU326
BU100
Transistor cross reference
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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BUX41
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
2SC1629 equivalent
BDX54
BU326
BU100
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2SA1046
Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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BUX85
BUX85
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2SA1046
380 darlington to3 ibm
REPLACEMENT BD139
BU326
BU108
BU100
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mje15033 replacement
Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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MJE341
MJE344
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
mje15033 replacement
BU108
TIP41B
MJE2482
x 0602 ma
2SC1419
BU326
BU100
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BU108
Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —
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MJE2361T
MJE2360T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
TIP105 Darlington transistor
BDX54
BU326
BU100
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Untitled
Abstract: No abstract text available
Text: H SO LID STATE INC. 46 FARRAND STREET Product Specification BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MJ15023 MJ15025 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15022; MJ15024 • Excellent safe operating area
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MJ15022;
MJ15024
MJ15023
MJ15025
J15023
J15025
-50Vdc
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SOLID STATE INC
Abstract: MJ15022 15024 J15022 J15024
Text: B SO LID STATE INC. 46 FARRAND STREET Product Specification BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area
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MJ15023;
MJ15025
MJ15022
MJ15024
SOLID STATE INC
15024
J15022
J15024
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diode t03
Abstract: MJ150 mj15024 MJ2955 CV9936 T0220H dyv32 MJ15022 MJ802 MJ4502 transistor mj11032
Text: 4ÔE T> • Ö1331Ö7 000045Ö 7TT SEMELAB ISMLB ] SEMELAB LT]>7V*«i HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code Type Number BYV32-150M-IS0 HR BYV32-2Q0M-IS0 HR I1YV32-200RM-IS0 HR BYV32-50M-IS0 HR BYV34-3ÜOM-ISO HR BYV34-400M-Is0 HR
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B1331Ã
Q00045Ã
BYV32-150M-IS0
BYV32-200M-ISO
YV32-200RM-ISO
BYV32-50M-IS0
BYV34-300M-IS0
BYV34-400M-Is0
BYV34-500M-Is0
BYW29-100M-Is0
diode t03
MJ150
mj15024
MJ2955
CV9936
T0220H
dyv32
MJ15022
MJ802 MJ4502
transistor mj11032
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MJ15024 MJ15025
Abstract: 2n3055 MJ15003 2N3055H MOTOROLA MJ15003 Motorola MJ15024-MJ15025 2N5629 MOTOROLA MJ15003 MJ15004 2N3772 motorola 2N3055H 2N3773 MOTOROLA
Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching lcCont VcEO (sus) Am ps Max V oljs Min 15 60 NPN ^FE PNP 2N3055H 2N3055 2N3055A UJ2955 MJ2955A lc (n M in/M ax Amp 20/70 20/70 20/70 4 4 4 ts tf MS
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2N3055H
2N3055
2N3055A
MJ2955
MJ2955A
MJ15015
MJ15016
MJ15001
MJ15002
MJ11018
MJ15024 MJ15025
2n3055 MJ15003
2N3055H MOTOROLA
MJ15003 Motorola
MJ15024-MJ15025
2N5629 MOTOROLA
MJ15003 MJ15004
2N3772 motorola
2N3773 MOTOROLA
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