MJ11015 TRANSISTOR Search Results

MJ11015

Contextual Info: MJ11015 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI MJ11015 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA MAXIMUM RATINGS IE 30 A VCE -120 V

MJ11015G

Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x
Contextual Info: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc

Mj11015

Contextual Info: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc

MJ11011

Abstract: MJ11014
Contextual Info: MJ11011/13/15 MJ11012/14/16 SGS-THOMSON MGMlLIOTIlMCt COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic

MJ11015G

Abstract: MJ11016G MJ11015 mj110156 MJ11012 MJ11012G MJ11016
Contextual Info: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc

MJ11016

Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015
Contextual Info: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP MJ11016 NPN SILICON PLANAR DARLINGTON POWER TRANSISTORS Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.

MJ11015

Contextual Info: PNP SILICON DARLINGTON TRANSISTOR MJ11015 SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)

MJ11015

Abstract: MJ11012 MJ11016 mj11016 mexico
Contextual Info: ON Semiconductort PNP High-Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 Min @ IC – 20 Adc

MJ11015G

Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015
Contextual Info: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc

MJ11015

Abstract: MJ11016 MJ11014 MJ11012 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11013 High-Current Complementary Silicon Transistors MJ11015 NPN MJ11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. • High DC Current Gain — hpg = 1000 Min @ Iq - 20 Adc

pin diagram of ic 4066

Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Contextual Info: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.

MJ11015

Abstract: MJ11015-11016 MJ11016
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJ11015 PNP MJ11016 NPN SILICON PLANAR DARLINGTON POWER TRANSISTORS Metal Can Package TO-3 Designed for use as Output Devices in Complementary General Purpose Amplifier Applications.

mj11015

Abstract: pnp resistor mj11012 transistor MJ11016
Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — hFE = 1000 Min @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor

Contextual Info: MJ11015 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200

mj11015

Abstract: mj11011
Contextual Info: MOTOROLA SC 12E 0 § b3b?2S4 00ÖS074 T | XSTRS/R F T-33^9 7 ^ 3 3 -3 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP npn' Ml 11011 Ml 11013 MJ11015 Ml 11012 MJ11014 MJ11016 H IG H -C U R R E N T C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S 30 A M P E R E

100 amp npn darlington power transistors

Abstract: mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet
Contextual Info: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

mj11011

Contextual Info: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. • •

MJ11015

Contextual Info: 1165917 High-current complementary silicon transistors. For use output devices in complementary general purpose amplifier applications. Features: • • • TO-3 High DC current gain - hFE = 1000 (minimum) at IC - 20A dc. Monolithic construction with built-in base emitter shunt resistor.

MJ11015

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J11013 M J11015 High-Current Complementary Silicon Transistors i l DM M J11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. M J11014 • High DC Current Gain — hpE = 1000 Min @ Iq - 20 Adc

mj11011

Abstract: MJ11016 MJ11013 MJ11014 MJ11015 MJ11012 Variable resistor 10K ohm transistor MJ11016
Contextual Info: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. Collector-Emitter Voltage ^C EO COIIector-Base Voltage V C BO Emitter-Base Voltage 30 AMPERE COMPLEMENTARY

PNP TRANSISTOR 1k

Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A

MJ11015

Abstract: mj11011 2N6285 2N6286 2N6287 CP547 MJ11013
Contextual Info: PROCESS CP547 Central Power Transistor TM Semiconductor Corp. PNP - Darlington Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization

MJ11011

Abstract: 2N6282 MJ4032 MOTOROLA 2N62B3 2N62B
Contextual Info: MOTOROLA SC 6367255 MOTOROLA SC DE^jj b3fcj7H55 0 0 3 7 ^ 7 3H OIODES/OPTOÏ C D IO D ES /O PTO 34C 7 *3 3 -0 I SILICON POWER TRANSISTOR DICE continued) 2C6284 DIE NO. — NPN LINE SOURCE — PL500.402 NPN q 3 7 9 4 7 2C6287 / d ie n o . — pnp LINE SOURCE — PL500.403