MITSUBISHI SOLDERING PROCESS Search Results

senju solder paste

Abstract: senju printing speed Senju metal solder paste viscometer Rosin Flux Type RMA Senju flux Senju soldering paste solder powder 62Sn36Pb2Ag
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.3 SOLDER SUPPLY PROCESS 2.3.1 SOLDER PASTE 1 Material Composition Soldering paste is mainly made from soldering powder and flux. Soldering powder makes up approximately 80-95wt% of soldering paste

MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow

Abstract: MITSUBISHI INTEGRATED CIRCUIT PACKAGES mitsubishi soldering process
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.5 SOLDERING PROCESS There are two soldering methods used in surface mounting: the flow method and reflow method. This section outlines the latter, which is mainstream in the industry. Table 6 REFLOW METHOD EXAMPLES

detail in table SURFACE MOUNT COMPONENTS

Abstract: MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.2 PRINTED CIRCUIT BOARD DESIGN In surface mounting, mount pad designing and board material selection are critical. Mount pad designing may influence solder yield. The substrate material may influence post-soldering reliability.

MITSUBISHI CAPACITOR

Abstract: paste capacitor SOLDERING REFLOW process mitsubishi SOP mitsubishi
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.1 SURFACE MOUNTING PROCESS SEQUENCE This section shows the surface-mounting process flow chart. There are two soldering methods: the flow method and reflow method. In surface mounting, the latter is usually used.

Mitsubishi FXos-20MR-ES

Abstract: FXOS-20MT-DSS mitsubishi fx 16 20MR fx 20mr-es POIN FXos mitsubishi triac FXOS-14MR-DS FXOS-20MR-ES FXoS-20MR-ES/UL
Contextual Info: FXos MICRO CONTROLLER SERIES Less soldering more cont rol A MITSUBISHI ELECTRIC Y o u r p a r t n e r in i n d u s t r i a l a u t o m a t i o n s y s t e m s THE PERFECT FIT FOR EMBEDDED APPLICATIONS S m a lle s t Footprint Yet The FXos range is the latest addition to the FX fa m ily of ‘b rick’

MITSUBISHI CM400

Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low

Ultrasonic Cleaning Transducer

Abstract: Ultrasonic cleaner piezo ULTRASONIC cleaning transducers Ultrasonic cleaner spray nozzles MITSUBISHI IGNITION ultrasonic transducer cleaning Terpene ultrasonic transducer clean circuit of "ultrasonic cleaner"
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.6 CLEANING PROCESS CFCs CFC-113 , Trichlene, 1.1.1-trichloroethane have conventionally been used to clean flux upon completion of component mounting on printed boards. For environmental concerns, however, production and use of these solvents are strictly regulated. Cleaning using an

z63n

Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Contextual Info: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process

RD02MUS1

Abstract: RD07MVS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-C Date : 5th Oct. 2006 Prepared : E.Akiyama S.Kametani Confirmed : T.Ohkawa SUBJECT: Recommended mounting & precaution for RD07MVS1&RD02MUS1 SUMMARY: This application note shows recommendation device mount method & precaution for

pcb warpage after reflow

Abstract: RD02MUS1 RD07MVS1
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-D Date : 5th Dec. 2003 Rev.date : 7th Jan. 2010 Prepared : N.Watanabe M.Wada Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Recommended mounted & precaution for RD07MVS1&RD02MUS1

shinetsu G746 rohs

Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:

shinetsu

Abstract: G746 mitsubishi semiconductors power modules mos semiconductor Mitsubishi Electric
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-F Date : 30th May 2001 Rev. date : 12th Jan. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR

Z158

Abstract: V i Curve Tracer curve tracer "curve tracer" TRACER SC 6249 MGF-7004
Contextual Info: — MITSUBISHI {DISCRETE SC> TI D E | b 5 M ci ñ S cl G O l G l b O 9 1D 1 0 1 6 0 N o v e « - t h l* CT T T MITSUBISHI SEMICONDUCTOR<GaAs MMIO DT-31-25 MGF7004 « to c W » « * 8 GaAs MONOLITHIC MICROWAVE 1C DESCRIPTION OUTLINE DRAWING The M GF7004 is a monolithic microwave integrated circuit

MGF1802

Contextual Info: MITSUBISHI {DISCRETE S O 11 DE |ta4TflS^ DOlQDflM ñ MITSUBISHI SEMICONDUCTOR <GaAs FET> _ 6249829 MITSUBISHI MGF1802 { D I S C R E T E SC I 91D 10084 DT-31-25 FOR MICROWAVE POW ER AMPLIFIERS D E S C R IP T IO N The MGF1802, high-power GaAs FE T with an N-channel

PM 1207

Contextual Info: MITSUBISHI D I S C R E T E SC bl E D 0D154MM Ô Ô4 H i n i T 5 MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01205,FA01206.FA01207 800MHz BAND 0.6W RF POWER HYBRID IC d e s c r ip t io n F A 0 1 2 0 5 , 'F A 0 1 2 0 6 , F A 0 1207 is RF power Hybrid OUTLINE DRAWING

MGF2116

Contextual Info: TL MITSUBISHI {DISCRETE SC> DE 1^34^02=1 OOlDOfl? 3 MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2116 6249823 MITSUBISHI DISCRETE SC 91D 10087 DT^-CS FOR M ICROW AVE PO W ER A M P LIFIER S DESCRIPTIO N The MGF2116, tiigh-power GaAs F E T with an N-channel Schottky gate, is designed for use in S- to Ku-band ampli­

G746

Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-006-G Date : 30th May 2001 Rev. date : 22th.Jun. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR

MGFK25M4045

Contextual Info: MITSUBISHI {DISCRETE SC> DElbaMTfiSi 001013^ 7 1 r-3?-¿>5 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK25M404S FOR M ICR O W AVE P O W E R A M P L IF IE R S IN TER N A LLY MATCHED DESCRIPTION The MGFK25M4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5

DC bias of gaas FET

Abstract: transistor GaAs FET s parameters
Contextual Info: MITSUBISHI {DISCRETE SC> TÏ » F | b S 4 ciflST □D1D113 □ MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2312 6 2 4 9 8 2 9 MITSUBI SH I DISCRETE SC 9 1D 10113 0 7 :3 1'£>5 FOR MICROW AVE PO W ER AM PLIFIERS D E S C R IP T IO N The MGF2312 is designed for power amplifiers and oscilla­

MGF7003

Abstract: maxim curve tracer MGF-7003
Contextual Info: MITSUBISHI {DISCRETE S O TI ]>Er|L:24cia5ti QQlQlSb 7 T o T- 31-3S M IT SU BISH I SEMICONDUCTOR<GaAs M M IO MGF7003 « -aie" s»*'“ « S 'í « 1- * 00\ a_Ü“ í^ m ' ’15 N S“Í Ca % G aA s M O N O LIT H IC M IC R O W A V E IC DESCRIPTIO N O UTLINE DRAW ING

mitsubishi mgf

Abstract: curve tracer
Contextual Info: MITSUBISHI {DISCRETE S O 6 2 4 9 82 9 MITSUBISHI TÎ » F | t . 5 4 c]flEci 001D133 t <D ISCRETE SC MITSUBISHI SEMICONDUCTOR <GaAs FET> 33 o re U N " n a r V 9,0 7MGFX34S9398 101 Nov0 n«ämaV«e« FOR MICROWAVE PO W ER AM PLIFIERS INTERNALLY M ATCHED Som® Pai

Contextual Info: MITSUBISHI {DISCRETE SC> TL DE | bSMTfiH'ì D O l O ll b MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2324 6249829 MITSUBISHI D I S C R E T E SC 9 1D 1 O 1 1 6 D T-& -Ò S FOR MICROW AVE PO W ER AM PLIFIERS DESCRIPTION The M G F 2 3 2 4 is designed fo r power am plifiers and oscilla­

F2117

Abstract: MGF2117 GF2117
Contextual Info: TI MITSU BI SH I {DISCRETE S O DE Q0 1 Q D T 0 3 | ~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6249829 MITSUBISHI D I S C R E T E SC MGF2117 DT-&-Ù5 9 1 D 10090 FOR M ICROW AVE PO W ER A M P LIFIE R S DESCRIPTION The M GF2117, high-power GsAs F E T with an N-channel

gf220

Contextual Info: MITSUBISHI {DISCRETE SC> TL I F | 1,54^02^ DD1D11D 5 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2205 £249 82 9 MITSUB I SH I DISCRETE SC) 91D 10110 D FOR MICROW AVE PO W ER AM PLIFIERS DESCRIPTION OUTLINE DRAWING Unit:millimeters(inches) The M G F 2 2 0 5 , high-power GaAs F E T w ith an N-channel