toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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Micron TLC
Abstract: micron emmc Micron NAND onfi MICRON NAND MLC TLC nand MICRON NAND sLC micron ecc nand ONFI micron emmc application note SLC NAND endurance
Text: Micron Memory Which NAND solution is best for my design? Micron offers a full line of high-performance memory solutions—from SLC, MLC, and TLC to Serial NAND, e•MMC , and MCPs—for a variety of applications. And we work with chipset vendors, OS designers, and other
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Micron NAND flash controller
Abstract: TLC nand Micron NAND Flash MLC Micron TLC nand flash ONFI 3.0 micron emmc nand flash tlc emmc ONFI ONFI 3.0
Text: NVM Advantages for Multiple Markets Micron Nonvolatile Memory Micron does more than design and manufacture nonvolatile NVM memory. We strive to solve design challenges through better engineering—by raising the bar on features, functionality, and performance. We’ll
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128Mb.
Micron NAND flash controller
TLC nand
Micron NAND Flash MLC
Micron TLC
nand flash ONFI 3.0
micron emmc
nand flash tlc
emmc
ONFI
ONFI 3.0
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smd transistor A6t 50
Abstract: transistor A6t 45 smd transistor A6t A6T TRANSISTOR smd transistor marking A14 A6t smd Transistor
Text: MICRON TECHNOLOGY INC 17E D • blllSMI OOGlflMb ñ ■ MICRON H 1E»W icucv.’î wc MT5C2561 883C MILITARY SRAM 256K X 1 SRAM " M f e - Z S .- O S AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88725 • JAN M38510/293 « RAD-tolerant (consult factory)
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MT5C2561
M38510/293
24L/300
MIL-STD-883
smd transistor A6t 50
transistor A6t 45
smd transistor A6t
A6T TRANSISTOR
smd transistor marking A14
A6t smd Transistor
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TC150GC8
Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
Text: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.
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TC150GCMOS
TC150G
TC110G,
TC120G
TC140G
wo220
MAS-0062/3-90
TC150GC8
TC150GH2
toshiba tc110g
toshiba tc140g
TC110G
TC150G89
toshiba toggle nand
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Untitled
Abstract: No abstract text available
Text: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi
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MwT-13
L-136-J
MwT-13
MwT-13HP
bl24100
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Untitled
Abstract: No abstract text available
Text: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72
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MwT-15
MwT-15
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON MT24D836 8 MEG X 36, 16 MEG X 18 DRAM MODULE 1 MICRON T E C H N O L O G Y INC 55E D • 8 MEG X 36,16 FAST PAGE MODE MEG x18 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-perform ance, CM OS silicon-gate process
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MT24D836
72-pin
104mW
048-cycle
MT24D836M
A0-A10;
A0-A10
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UDZV2.0B
Abstract: No abstract text available
Text: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25mm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package
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P400e
MTFDDAA050MAR,
MTFDDAA100MAR,
MTFDDAA200MAR,
MTFDDAA400MAR
100GB,
200GB,
400GB
512-byte
UDZV2.0B
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MTFDDAA100MAR
Abstract: No abstract text available
Text: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25nm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package
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P400e
MTFDDAA050MAR,
MTFDDAA100MAR,
MTFDDAA200MAR,
MTFDDAA400MAR
100GB,
200GB,
400GB
512-byte
MTFDDAA100MAR
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Untitled
Abstract: No abstract text available
Text: ACT 3 Field Programmable Gate Arrays Preliminary Features Description • The ACT 3 family, based on Actel’s proprietary PLICE antifuse technology and 0.8-micron double-metal, double-poly CMOS process, offers a high-performance programmable solution
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CB12000
Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)
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CB22000
CB12000
cd 4847
bt8c
dc to ac inverter schematic
ld3p
FD11S
FD3S
BUT12
BUT18
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LCA100K
Abstract: LSI LOGIC LCA100K
Text: »• * LSI LOGIC * LCA100K Compacted Array Plus Series Description The LCA100K Compacted A rray Plus Series is an HCMOS Array-Based ASIC ApplicationSpecific Integrated Circuit product offering extremely high performance. The LCA100K Series is manufactured using 1.0-micron
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LCA100K
LSI LOGIC LCA100K
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ST100
Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
Text: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.
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CB65000
85K/mm2,
30nanoWatt/Gate/MHz/Stdload.
ST100
CB55000
D950
ST10
ST20
tristate nand gate
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Untitled
Abstract: No abstract text available
Text: LSI LOGIC LCA100K Compacted Array P lu s Series 0.7-Micron HCMOS Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering extremely high performance, combined with very high gate counts. The LCA100K series is manufac
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transistor nd8
Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.
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ISB28000
transistor nd8
BT4R
bt8c
pMOS NAND GATE
MUX21L
AN720
BUT12
BUT18
BUT24
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Untitled
Abstract: No abstract text available
Text: LSI LOGIC LCA10QK Compacted Array Plus Series 0.7-Micron HCMOS Preliminary Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering ex tremely high performance, combined with very high gate counts. The LCA100K series is manufactured
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LCA10QK
LCA100K
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ P400e mSATA NAND Flash SSD Features P400e mSATA NAND Flash SSD MTFDDAT064MAR, MTFDDAT128MAR, MTFDDAT256MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface
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P400e
MTFDDAT064MAR,
MTFDDAT128MAR,
MTFDDAT256MAR
512-byte
32-command
09005aef8516d551
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0.18-um CMOS technology characteristics
Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low
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CB65000
85K/mm
30nanoWatt/Gate/MHz/
0.18-um CMOS technology characteristics
CB55000
D950
ST10
ST100
ST20
CMOS GATE ARRAY stmicroelectronics
12v na 19.5v
0.18-um CMOS technology characteristics 1.2V
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Untitled
Abstract: No abstract text available
Text: IBM04361BULAA IBM04181BULAA Preliminary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Register-Latch Mode Of Operation with Self-Timed Late Write • Single Differential PECL Clock compatible with
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IBM04361BULAA
IBM04181BULAA
GA15-5001-00
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Untitled
Abstract: No abstract text available
Text: IBM04184ARLAA IBM04364ARLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Latched Outputs • 0.4 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode Of Opera
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IBM04184ARLAA
IBM04364ARLAA
IBM04364herein.
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UDZV2.0B
Abstract: No abstract text available
Text: Preliminary‡ P400e mSATA NAND Flash SSD Features P400e mSATA NAND Flash SSD MTFDDAT064MAR, MTFDDAT128MAR, MTFDDAT256MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface
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P400e
MTFDDAT064MAR,
MTFDDAT128MAR,
MTFDDAT256MAR
512-byte
32-command
09005aef8516d551
UDZV2.0B
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ALU IC 74181 architecture
Abstract: ALU IC 74181 circuit diagram ALU IC 74181 FUNCTION TABLE INTERNAL DIAGRAM OF IC 74181 8 BIT ALU by 74181 circuit ALU 74-181 ALU IC 74181 74181 motorola "alu 4 bit" alu 74181
Text: LSI M, \ 1 Vy / ' lock LSA2001 SHicon-Gate HCMOS Structured Array , \ f ei 005793 O L S L * Description The LSA2001 is a member of LSI Logic Corporation's 2-micron HCMOS Structured Array family. These very high-performance application-specific integrated cir
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LSA2001
16-Bit
32-Bit
ALU IC 74181 architecture
ALU IC 74181 circuit diagram
ALU IC 74181 FUNCTION TABLE
INTERNAL DIAGRAM OF IC 74181
8 BIT ALU by 74181
circuit ALU 74-181
ALU IC 74181
74181 motorola
"alu 4 bit"
alu 74181
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AO4L
Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Text: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells
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MTC-35000
102ps
216ps
AO4L
ld3p
AO15A
AO16A
FD3S
AO15AN
AO23L
BT8C datasheet
MTC-35400
mux2*1
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