MICRON RESISTOR TCR Search Results

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 4 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 8 µm Poly and Metal Pitch 10 Volts Maximum Operating Voltage 15 Volts High Voltage Option Isolated Vertical PNP Bipolar Module Low TCR Resistor Module

micron resistor TCR

Abstract: CMOS Process Family micron resistor 1.2 Micron CMOS Process Family
Contextual Info: 5 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 10 µm Poly and Metal Pitch • Low TCR Resistor Module Description The Mitel 5µm process is a double poly/double metal CMOS process with an operating voltage range from

P-MOSFET

Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module

Contextual Info: AP5025 8 Watt Current Sense Chip Resistors A very high power current sense chip resistor capable of dissipating 8 watts with recommended thermal management architecture on the PCB. • Power Dissipation 8 watts with 700 micron PCB thermal Pad • Low resistance values

RESISTOR 5025 1W

Abstract: R002F RESISTOR 5025 R005-F R003F r005f micron marking code information r001 175C R001F
Contextual Info: 8W CURRENT DETECT CHIP RESISTORS Features…………………………………………………………. ƒ ƒ ƒ ƒ Non inductive design. Low TCR, typically less than 30ppm/°C. Low profile surface mount package. Excellent pulse/surge performance. 8W power rating.

R005F

Abstract: R002F r001f R003F RESISTOR 5025 1W RESISTOR 5025 R004F R005-F RESISTOR 5025 8W r001
Contextual Info: 8W CURRENT DETECT CHIP RESISTORS Features…………………………………………………………. ƒ ƒ ƒ ƒ Non inductive design. Low TCR, typically less than 30ppm/°C. Low profile surface mount package. Excellent pulse/surge performance. 8W power rating.

equivalent of 662K

Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W 662k MPR 55 F resistor ceramic MDS-1212 ML10L meg05n
Contextual Info: Micron Power Resistors Part Numbering System M N S Type MP - Pin terminal MH - Lug terminal MN - Vertical lead terminal MNS 0 5 Rated power 02 - 2W 10 - 10W 15 - 15W Element G-wire -wound type ceramic core S-Wire -wound type. (glass fiber core) R-Metal Oxide Film

Contextual Info: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of

Contextual Info: ALA300/301 9Q-V0LT LINEAR ARRAYS Description The ALA300/301 Linear Arrays provide design engineers the means to obtain 90 V semi-custom integrated circuits. The single-module array ALA300 consists of 13 vertical NPN and 15 vertical PNP transistors, three 6 pF capacitors, and 1k

0.6 um cmos process

Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option

CMOS Process Family

Abstract: 1.5um cmos process family
Contextual Info: 1.5 Micron CMOS Process Family  February 1996 Features Technology Outline • • • • • • • • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option 1.2 Volts Very Low Voltage Option 5.5 Volts Maximum Operating Voltage Double Poly / Double Metal

r001f

Contextual Info: 8W Current Sense Chip Resistors BCS 8 Series • Non inductive design. · Low TCR, typically less than 100ppm/°C. · Low profile surface mount package. · Excellent pulse/surge performance. · 8W power rating. Applications · Current sense applications · Over current protection in Battery chargers.

Contextual Info: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology

Contextual Info: 8W Current Sense Chip Resistors BCS 8 Series • · · · · Non inductive design. Low TCR, typically less than 100ppm/°C. Low profile surface mount package. Excellent pulse/surge performance. 8W power rating. Applications Current sense applications Over current protection in Battery chargers.

CMOS Process Family

Abstract: P-MOSFET transistor P-MOSFET process of mosfet micron resistor
Contextual Info: 2 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 4 µm Poly and Metal I Pitch • 320 ps Delay per stage Ring Osc. • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • Shrinkable to Mitel 1.5µm Process

p-mosfet

Abstract: Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters
Contextual Info: 4 Micron CMOS Process Family  June 1995 Process Parameters Features 4µm 4µm • Double Poly / Double Metal • 8 µm Poly and Metal Pitch • 10 Volts Maximum Operating Voltage Metal I pitch width/space 4/4 4 /4 µm • 15 Volts High Voltage Option

micron resistor

Abstract: CMOS Process Family
Contextual Info: 2 Micron CMOS Process Family  February 1996 Features • • • • • • • • • Process Parameters Double Poly / Double Metal 4 µm Poly and Metal I Pitch 320 ps Delay per stage Ring Osc. 5.5 Volts Maximum Operating Voltage 2.7~3.6 Volts Low Voltage Option

Contextual Info: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design

BD 104 NPN

Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN
Contextual Info: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

pnp 8 transistor array

Abstract: ALA401 Boron 220 resistor array ALA402 RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY
Contextual Info: A T & T MELEC I C 2SE D • G0 5 G 0 2 b 000^54 1 Preliminary Data Sheet ALA401/402 Semicustom Linear Arrays Description The ALA401/402 Semicustom Linear Arrays are fabricated using a complementary bipolar integrated cir­ cuit (CBIC) process that offers the advantages of vertical NPN and PNP transistors. CBIC technology

1.2 Micron CMOS Process Family

Abstract: 1.2 micron cmos P-MOSFET metal oxide in capacitor vertical PNP metal resistor 0.8 Micron CMOS Process Family 0.03 um CMOS technology
Contextual Info: 1.2 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 2.4 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • Twin-tub • • 1.2µm 5volts Units Metal I pitch width/space 1.4 / 1.0

1.2 Micron CMOS Process Family

Abstract: CMOS Process Family 5-Micron-CMOS-Process 1.5um cmos process family 0.6 um cmos process
Contextual Info: 1.5 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 1.5µm Process Parameters 5volts & 3volts

pnp 8 transistor array

Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor
Contextual Info: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

K1HC

Contextual Info: b l 1 1 5 Ml Q Q 1 Q D 3 S fiflfl • URN ADVANCE MT9LD T 272 C 2 MEG X 72 DRAM MODULE MICRON M SEMICONDUCTOR INC. DRAM MODULE 2 MEG X 72 DRAM ECC, 3.3V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard ECC pinout in a 168-pin, dual read­