mt4c16257dj
Abstract: TC514265DJ TMS45165DZ TC514265DJS TC514265DFTS MT4C16270DJ TMS45160DZ TC514260DJ
Text: vendors Vendor Name HITACHI HITACHI HITACHI HITACHI HITACHI HITACHI MICRON MICRON MICRON MICRON MICRON MOSEL VITELIC MOSEL VITELIC Part No. HM514260AJ HM51S4260AJ HM514260AZ HM51S4260AZ HM514260ATT HM51S4260ATT HM514260CJ HM514260CZ HM514260CTT HM514260CLZ
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HM514260AJ
HM51S4260AJ
HM514260AZ
HM51S4260AZ
HM514260ATT
HM51S4260ATT
HM514260CJ
HM514260CZ
HM514260CTT
HM514260CLZ
mt4c16257dj
TC514265DJ
TMS45165DZ
TC514265DJS
TC514265DFTS
MT4C16270DJ
TMS45160DZ
TC514260DJ
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TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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MT4C4M4A1TG-6S
Abstract: MT4LC4M4B1TG-6S
Text: 4 MEG x 4 FPM DRAM MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions,
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C16256/7/8/9 L 256KX 16 DRAM MICRON I r iCH NOLOGY. IN2 MICRON TECHNOLOGY INC 55E P DRAM • LlllSM'î 0G04Sbl IMS HIMRN JEW 256K X16 DRAM LOW POWER, EXTENDED REFRESH — - :- S -1 7 - PIN ASSIGNMENT Top View
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MT4C16256/7/8/9
256KX
0G04Sbl
MT4C16257/9
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC Ì7E ß • blllSMT MICRON ■ 00D17Sñ'0 MT4C4256 883C HitMXOC.Y WC MILITARY DRAM 256K X 4 DRAM FAST PAGE MODE DRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D (consult factory for reference number) 20U300 DIP
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00D17Sñ
MT4C4256
20U300
175mW
T-46-23-17
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and
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GG07b0S
MT4C4256
512-cycle
MT4C4256)
175mW
MT4C4256L
200nA
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MT4C1670
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages
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DD0HS21
MT4C1670/1
MT4C1670
MT4C1671
225mW-----------
DDD4S36
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MT4C4001J
Abstract: MT4C4001JDJ-6
Text: MICRON TECHNOLOGY INC SSE » • b lllS H S MICRON B 00042^4 W «MRN MT4C4001J 1 MEG X 4 DRAM TECHNOLOGY. INC DRAM 1 MEG X 4 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process
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bill541
00042T4
MT4C4001J
-T-tt-tt-18
225mW
024-cycle
MT4C4001J
MT4C4001JDJ-6
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MT4C1024
Abstract: No abstract text available
Text: MICRON TECHNOL OGY INC 17E D • blllSMI 00017Mb *4 MICRON I MT4C1024 883C TECHMXOCY.OtC MILITARY DRAM 1MEG 1 DRAM FAST PAGE M O D E PIN ASSIGNMENT Top View • SM D (consult factory for reference number) » JAN M 38510/249 (D-6) p [ 1 • Industry standard pin-out and timing
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00017Mb
MT4C1024
18L/300
20L/LCC
175mW
MIL-STD-883
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MT4C16257
Abstract: RCD 2226 MT4C16256 256K 16bit DRAM zip
Text: MICRON TECHNOLOGY INC ADVANCE MICRON • TECHWfìl OGV INC. S5E » ■ b lllS H T MT4C16256/7/8/9 256KX 16 DRAM DÜD4S3T TTT ■ URN 2 5 6 K X 1 6 DRAM DRAM FAST PAGE MODE Zj-j'y • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process
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MT4C16256/7/8/9
256Kx
500mW
MT4C16257/9
MT4C16258/9
T-46-23-17
CYCLE24
MT4C10256/7/8/9
MT4C16257
RCD 2226
MT4C16256
256K 16bit DRAM zip
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E T> • b 111S 4 =1 DDG7Sbñ 271 B U R N MT4C1004J L 4 MEG X 1 DRAM MICRON 4 MEG x 1 DRAM DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only)
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MT4C1004J
024-cycle
MT4C1004J)
128ms
275mW
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blllSH^ □□□77A3 B4T « M R N ADVANCE MT4 L C2M8B1/2 S 2 MEG X 8 WIDE DRAM MICRON I SEMICONDUCTOR. INC WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES • SELF REFRESH, or "Sleep Mode"
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256ms)
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Untitled
Abstract: No abstract text available
Text: MICRON T E C H N O L O G Y INC 5SE J> • b l l l S M T 00041*10 fc.03 ■ MRN MT4C1004J 4 MEG X 1 DRAM MICRON DRAM 4 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process
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MT4C1004J
225mW
024-cycle
20-Pin
C1004J
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Untitled
Abstract: No abstract text available
Text: 4’8 M E Gx36 MICRON* I ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC- l" R A M U MT9D436 X r tM IV I M T18D836 x MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mi/msp/htnl/datosheet.htnl FEATURES PIN ASSIGNMENT Front View)
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MT9D436
72-pin,
048-cycle
T18D836
72-Pin
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Untitled
Abstract: No abstract text available
Text: MICRON SEMI CO NDU CTOR INC b7E D blllSMT GGDTfll? 3B7 iriRN PRELIMINARY MT4LC16256/7 S 256K X 16 WIDE DRAM MICRON m SEMiCONSUCTÛft IMC. WIDE DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions
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MT4LC16256/7
512-cycle
16256/7S
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blll54T DGDflb3fl 302 HIMRN M T 4C 16260/1 256KX16 W ID ED R A M MICRON I s e m ic o n d u c t o rin c WIDE DRAM 256K X 1 6 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages
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blll54T
500mW
024-cycle
MT4C16260/1
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC b3E D • b 1 1 1 5 14 D0 0 7 ö E b SbS M U R N ADVANCE MT4C16270/1 256KX 16 WIDE DRAM MICRON B SEMICONDUCTOR. INC. WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions
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b11151
MT4C16270/1
256KX
500mW
512-cycle
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Untitled
Abstract: No abstract text available
Text: MICRON • 256K technCLOGV. inc. MICRON T E C H N O L O G Y INC SSE T> DRAM MODULE MT8D25632 32, 512K X 16 DRAM MODULE iu r n ■ blllSMT D Q D 4 7 b 7 4 E5 X 256K X 32, 512K x 16 FAST PAGE MODE MT8D25632 LOW POWER, EXTENDED REFRESH (MT8D25632 L) FEATURES
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MT8D25632
72-pin
512-cycle
YCLE24
0G04777
T8D25632
MT8025632
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Untitled
Abstract: No abstract text available
Text: MICRON • 4 MEG TECHNOLOur. inc . MICRON T E C H N O L O G Y INC S5E ]> ■ X bill5 ^ MT9D49 9 DRAM MODULE D D 0 4 7 4 7 b37 IMRN 4 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry standard pinout in a 30-pin. single-in-line
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MT9D49
30-pin.
025mW
024-cycle
128ms
MT9D49)
A0-A10
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON MT24D836 8 MEG X 36, 16 MEG X 18 DRAM MODULE 1 MICRON T E C H N O L O G Y INC 55E D • 8 MEG X 36,16 FAST PAGE MODE MEG x18 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-perform ance, CM OS silicon-gate process
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MT24D836
72-pin
104mW
048-cycle
MT24D836M
A0-A10;
A0-A10
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC b3E D • blllSHT MICRON I DDDfih22 T45 M M R N M T4C 8512/3 L m O K vX R8 WIDE \A/inP DRAM nOAM 512K S ili ICONOUCTOR MC WIDE DRAM 512K X 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and
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DDDfih22
MT4G8513
024-cyde
MT4C6512/3
C1993.
DGDflb37
MT4C8512/3L
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)
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MT8D132
MT8D132)
MT8D132
72-pin
800mW
024-cycle
MT80132
MT6D132
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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marking 1PC 6-pin
Abstract: No abstract text available
Text: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY. INC. DRAM MT4C1M16E5 MT4LC1M16E5 FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%
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MT4C1M16E5
MT4LC1M16E5
024-cycle
marking 1PC 6-pin
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