MICRON MT4C Search Results

mt4c16257dj

Abstract: TC514265DJ TMS45165DZ TC514265DJS TC514265DFTS MT4C16270DJ TMS45160DZ TC514260DJ
Contextual Info: vendors Vendor Name HITACHI HITACHI HITACHI HITACHI HITACHI HITACHI MICRON MICRON MICRON MICRON MICRON MOSEL VITELIC MOSEL VITELIC Part No. HM514260AJ HM51S4260AJ HM514260AZ HM51S4260AZ HM514260ATT HM51S4260ATT HM514260CJ HM514260CZ HM514260CTT HM514260CLZ

Contextual Info: ADVANCE MT4C16256/7/8/9 L 256KX 16 DRAM MICRON I r iCH NOLOGY. IN2 MICRON TECHNOLOGY INC 55E P DRAM • LlllSM'î 0G04Sbl IMS HIMRN JEW 256K X16 DRAM LOW POWER, EXTENDED REFRESH — - :- S -1 7 - PIN ASSIGNMENT Top View

Contextual Info: MICRON TECHNOLOGY INC Ì7E ß • blllSMT MICRON ■ 00D17Sñ'0 MT4C4256 883C HitMXOC.Y WC MILITARY DRAM 256K X 4 DRAM FAST PAGE MODE DRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D (consult factory for reference number) 20U300 DIP

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and

MT4C1670

Contextual Info: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages

MT4C4001J

Abstract: MT4C4001JDJ-6
Contextual Info: MICRON TECHNOLOGY INC SSE » • b lllS H S MICRON B 00042^4 W «MRN MT4C4001J 1 MEG X 4 DRAM TECHNOLOGY. INC DRAM 1 MEG X 4 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process

MT4C1024

Contextual Info: MICRON TECHNOL OGY INC 17E D • blllSMI 00017Mb *4 MICRON I MT4C1024 883C TECHMXOCY.OtC MILITARY DRAM 1MEG 1 DRAM FAST PAGE M O D E PIN ASSIGNMENT Top View • SM D (consult factory for reference number) » JAN M 38510/249 (D-6) p [ 1 • Industry standard pin-out and timing

MT4C16257

Abstract: RCD 2226 MT4C16256 256K 16bit DRAM zip
Contextual Info: MICRON TECHNOLOGY INC ADVANCE MICRON • TECHWfìl OGV INC. S5E » ■ b lllS H T MT4C16256/7/8/9 256KX 16 DRAM DÜD4S3T TTT ■ URN 2 5 6 K X 1 6 DRAM DRAM FAST PAGE MODE Zj-j'y • Industry standard xl6 pinouts, timing, functions and packages • High-performance, CMOS silicon-gate process

Contextual Info: MICRON SEMICONDUCTOR INC b3E T> • b 111S 4 =1 DDG7Sbñ 271 B U R N MT4C1004J L 4 MEG X 1 DRAM MICRON 4 MEG x 1 DRAM DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C1004J) or 128ms (MT4C1004J L only)

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • blllSH^ □□□77A3 B4T « M R N ADVANCE MT4 L C2M8B1/2 S 2 MEG X 8 WIDE DRAM MICRON I SEMICONDUCTOR. INC WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES • SELF REFRESH, or "Sleep Mode"

Contextual Info: MICRON T E C H N O L O G Y INC 5SE J> • b l l l S M T 00041*10 fc.03 ■ MRN MT4C1004J 4 MEG X 1 DRAM MICRON DRAM 4 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process

Contextual Info: 4’8 M E Gx36 MICRON* I ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC- l" R A M U MT9D436 X r tM IV I M T18D836 x MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mi/msp/htnl/datosheet.htnl FEATURES PIN ASSIGNMENT Front View)

8 MEG X32 EDO

Contextual Info: 4,8 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC- HR AM U lln m MT8D432 X MT16D832(X) IV I For the ia test data sheet revisions, piease refer to the Micron Web site: www.micron.com/mti/msp/htmi/ctatasheet.html IlJ| III FEATURES • JEDEC- and industry-standard pinout in a 72-pin,

Contextual Info: MICRON SEMI CO NDU CTOR INC b7E D blllSMT GGDTfll? 3B7 iriRN PRELIMINARY MT4LC16256/7 S 256K X 16 WIDE DRAM MICRON m SEMiCONSUCTÛft IMC. WIDE DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions

Contextual Info: MICRON S E M I C O N D U C T O R INC b3E D • b 1 1 1 5 14 D0 0 7 ö E b SbS M U R N ADVANCE MT4C16270/1 256KX 16 WIDE DRAM MICRON B SEMICONDUCTOR. INC. WIDE DRAM 256K x 16 DRAM FAST-PAGE-MODE WITH EXTENDED DATA-OUT FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions

Contextual Info: MICRON • 256K technCLOGV. inc. MICRON T E C H N O L O G Y INC SSE T> DRAM MODULE MT8D25632 32, 512K X 16 DRAM MODULE iu r n ■ blllSMT D Q D 4 7 b 7 4 E5 X 256K X 32, 512K x 16 FAST PAGE MODE MT8D25632 LOW POWER, EXTENDED REFRESH (MT8D25632 L) FEATURES

Contextual Info: MICRON • 4 MEG TECHNOLOur. inc . MICRON T E C H N O L O G Y INC S5E ]> ■ X bill5 ^ MT9D49 9 DRAM MODULE D D 0 4 7 4 7 b37 IMRN 4 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry standard pinout in a 30-pin. single-in-line

Contextual Info: ADVANCE MICRON MT24D836 8 MEG X 36, 16 MEG X 18 DRAM MODULE 1 MICRON T E C H N O L O G Y INC 55E D • 8 MEG X 36,16 FAST PAGE MODE MEG x18 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-perform ance, CM OS silicon-gate process

Contextual Info: MICRON S E M I C O N D U C T O R INC b3E D • blllSHT MICRON I DDDfih22 T45 M M R N M T4C 8512/3 L m O K vX R8 WIDE \A/inP DRAM nOAM 512K S ili ICONOUCTOR MC WIDE DRAM 512K X 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and

Contextual Info: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

MT4C4M4A1TG-6S

Abstract: MT4LC4M4B1TG-6S
Contextual Info: 4 MEG x 4 FPM DRAM MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1 DRAM For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions,

marking 1PC 6-pin

Contextual Info: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY. INC. DRAM MT4C1M16E5 MT4LC1M16E5 FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%