MICROFET Search Results

Contextual Info: FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode Features General Description • 4 A, 20 V RDS ON = 100 mΩ @ VGS = 4.5 V RDS(ON) = 150 mΩ @ VGS = 2.5 V ■ Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm FDFM2N111 combines the exceptional performance of Fairchild’s

Contextual Info: FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m: General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET

Contextual Info: FDM6296 Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between Rds on and

FDME0106NZT

Abstract: fdme0106 PF203
Contextual Info: FDME0106NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET

FDMC6296

Contextual Info: Single N-Channel Logic-Level Power Trench MOSFET 30 V, 11.5 A, 10.5 mΩ Features General Description „ Max rDS on = 10.5 mΩ at VGS = 10 V, ID = 11.5 A This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform

OFET

Contextual Info: January 2006 SEM IC O N D U C TO R FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V,5.0A,40mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special MicroFET

FDMC3300NZA

Abstract: mosfet
Contextual Info: FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET 8A,20V,26mΩ General Description Features This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5v on special MicroFET

Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description ̈ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET

FDFM2P110

Abstract: MO-229
Contextual Info: FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Features General Description • –3.5 A, –20 V RDS ON = 140 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V ■ Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm

FDMA420NZ

Abstract: FDMA430NZ MO-229
Contextual Info: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET

FDM6296

Contextual Info: FDM6296 Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description • 11.5 A, 30 V RDS ON = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Profile – MicroFET 3.3 x 3.3 mm

mosfet 50a 25v to 252

Contextual Info: FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 30V,5.0A,40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET

SO8 package fairchild

Contextual Info: October 2001 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that

Contextual Info: FDM6296 Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mΩ Features tm General Description ̈ Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform

FET pair n-channel p-channel

Abstract: microfet FDFME3N311ZT 16X16 FDFMA3N109
Contextual Info: LOW VOLTAGE DISCRETE SOLUTIONS FDFME3N311ZT AND FDMA6023PZT IN MICROFET 2X2 & 1.6X1.6 Fairchild’s Offering Designed with its proprietary PowerTrench process technology, Fairchild Semiconductor offers low voltage discrete solutions for portable applications with excellent thermal performance and high efficiency in ultra-compact form

SO8 package fairchild

Abstract: 021L2
Contextual Info: February 2002 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that

Contextual Info: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description „ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET

Contextual Info: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET

SO8 package fairchild

Abstract: so8 pcb pattern microfet
Contextual Info: February 2002 Application Note 7527 Dual Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new dual MicroFET™ 3x2 package with two exposed drain pads provides a true surface-mount alternative that greatly improves thermal characteristics, high current handling capability and low on-resistance. These

ipc 610D

Abstract: IPC-SM-7525A IPC-7525 IPC610D JSTD001D Intel reflow soldering profile BGA IPC-4101B Lead Free reflow soldering profile BGA J-STD-001C IPC-A-610D
Contextual Info: Application Note AN9047 Assembly Guidelines for MicroFET-6 Packaging By Dennis Lang INTRODUCTION The Fairchild MicroFET-6 is a 2mm x 2mm package is based on Molded Leadless Packaging MLP technology. This technology has been increasingly used in packaging for power related

Contextual Info: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m: General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET

FDMA430NZ

Abstract: MO-229
Contextual Info: FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 30V,5.0A,40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET

FDMA520PZ

Contextual Info: FDMA520PZ tm Single P-Channel PowerTrench MOSFET –20V, –7.3A, 30mΩ Features General Description „ Max rDS on = 30mΩ at VGS = –4.5V, ID = –7.3A „ Max rDS(on) = 53mΩ at VGS = –2.5V, ID = –5.5A „ Low profile - 0.8mm maximum - in the new package MicroFET

FDMA430NZ

Abstract: marking 430
Contextual Info: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET