MG75Q1ZS50 Search Results

MG75Q1ZS50 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG75Q1ZS50		Toshiba	High Power Switching Applications Motor Control A		Original	PDF
MG75Q1ZS50		Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications		Original	PDF

MG75Q1ZS50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MG75Q1ZS50 Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode	Original	MG75Q1ZS50 2-94D7A MG75Q1ZS50	PDF
TOSHIBA IGBT DATA BOOK Abstract: MG75Q1ZS50 Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode	Original	MG75Q1ZS50 2-94D7A TOSHIBA IGBT DATA BOOK MG75Q1ZS50	PDF
Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)	Original	MG75Q1ZS50 2-94D7A	PDF
Contextual Info: T O SH IB A MG75Q1ZS50 MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage	OCR Scan	MG75Q1ZS50	PDF
AST0 Abstract: MG75Q1ZS50 Contextual Info: TOSHIBA MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.) Enhancement-Mode	OCR Scan	MG75Q1ZS50 2-94D7A AST0 MG75Q1ZS50	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF