Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MG300Q Search Results

    SF Impression Pixel

    MG300Q Price and Stock

    Powerex Power Semiconductors MG300Q2YS60A

    IGBT MOD 1200V 300A 2800W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MG300Q2YS60A Bulk 1
    • 1 $195.28
    • 10 $195.28
    • 100 $195.28
    • 1000 $195.28
    • 10000 $195.28
    		Buy Now

    Toshiba America Electronic Components MG300Q1US42

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG300Q1US42 175 1
    • 1 $120
    • 10 $110.76
    • 100 $98.4
    • 1000 $98.4
    • 10000 $98.4
    		Buy Now
    Quest Components MG300Q1US42 140
    • 1 $130
    • 10 $130
    • 100 $105
    • 1000 $105
    • 10000 $105
    		Buy Now

    Toshiba America Electronic Components MG300Q1US41

    300A, 1200V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG300Q1US41 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MG300Q Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG300Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1UK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300Q1UK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG300Q1UK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 300A Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Toshiba V(ces): 1200V V(ges): ±20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US41 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US41 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG300Q1US41 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q1US41 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF
    MG300Q1US41(AC:G) Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US51 Toshiba TRANS IGBT MODULE N-CH 1200V 400A 4(2-109F1A) Original PDF

    MG300Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG300Q2YS65H

    Abstract: No abstract text available
    Text: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG300Q2YS65H 2-109C4A MG300Q2YS65H

    MG300Q2YS60A

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG300Q1US51 2-109F1A

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 300 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA


    Original     		PDF MG300Q2YS60A Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    MG300Q2YS50

    Abstract: No abstract text available
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG300Q2YS50 2-109C1A 15ments, MG300Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A 200V/300A 2-123C1B

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) l Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    mg300* toshiba

    Abstract: MG300Q1US51
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode


    Original     		PDF MG300Q1US51 2-109F1A mg300* toshiba MG300Q1US51

    MG300Q2YS50

    Abstract: 2-109C1A
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q2YS50 2-109C1A MG300Q2YS50 2-109C1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q1US51 1256C VCE25i

    mg30

    Abstract: MG300Q1US51 P channel 600v 300a IGBT
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A mg30 MG300Q1US51 P channel 600v 300a IGBT

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG300Q1UK1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTRO L APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 G300Q TjS125

    jSw Diode

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1 jSw Diode

    MG300Q1US11

    Abstract: GE-540 GE-54 221D
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)


    OCR Scan     		PDF MG300Q1US11 TDT72SD PW03960796 MG300Q1US11 GE-540 GE-54 221D

    MG300Q1US41

    Abstract: S60C
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US 4 1 HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : V c E (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 2-109A4A MG300Q1US41 S60C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = O . o / ' S (Max.) Low Saturation Voltage : V Q E(sat) = 4.0V


    OCR Scan     		PDF MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US41 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. M O TO R C O NTRO L A PPLIC A TIO N S. • High I n p u l Impedance • High Speed : tf= 0 .5 //s M a x . • Low S a tu r a tio n Voltage : V £ E ( s a t) = 4 . 0 V t rr = 0.5//s(Max.) (Max.)


    OCR Scan     		PDF MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 il <; a. 1 M r • ■ HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s (Max.) • Low Saturation Voltage : V ç E (ç a t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 JG300Q1US41

    YS40

    Abstract: MG300Q2YS40 MG300Q2YS MG300Q
    Text: TOSHIBA MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2 YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed EQUIVALENT CIRCUIT : tf= O.ô^s Max. trr —0.5/43 (Max.) Low Saturation Voltage : VCE(sat)~4-W (Max.)


    OCR Scan     		PDF MG300Q2YS40 MG300Q2 2-109D2A YS40 MG300Q2YS40 MG300Q2YS MG300Q