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    MG1200 Price and Stock

    Globetek Inc WR9MG1200CCP-F(R6B)

    AC/DC WALL MOUNT ADAPTER 15V 18W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WR9MG1200CCP-F(R6B) Bulk 1,158 1
    • 1 $8.5
    • 10 $8.5
    • 100 $7.016
    • 1000 $5.95293
    • 10000 $5.95293
    		Buy Now

    Globetek Inc WR9MG1200LCP-F(R6B)

    AC/DC WALL MOUNT ADAPTER 15V 18W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WR9MG1200LCP-F(R6B) Bulk 832 1
    • 1 $4.98
    • 10 $4.98
    • 100 $4.98
    • 1000 $4.98
    • 10000 $4.98
    		Buy Now

    Amphenol SSI MG1-200-A-9V-R

    SENSOR DIGITAL GAUGE 200PSI LCD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MG1-200-A-9V-R Box 19 1
    • 1 $140.48
    • 10 $140.48
    • 100 $92.9519
    • 1000 $92.9519
    • 10000 $92.9519
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    Rochester Electronics LLC CY8CTMG120-00AXI

    CONSUMER CIRCUIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY8CTMG120-00AXI Bag 7
    • 1 -
    • 10 $43.34
    • 100 $43.34
    • 1000 $43.34
    • 10000 $43.34
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    Amphenol Corporation MG1-200-A-9V-R

    Industrial Pressure Sensors DIGITAL GAUGE, 200PSI, 1/4" NPT, LCD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MG1-200-A-9V-R 1
    • 1 $121.44
    • 10 $111.3
    • 100 $95.49
    • 1000 $95.49
    • 10000 $95.49
    		Buy Now
    Find more MG1200 price and stock on Findchips.com

    MG1200 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG1-200-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 200PSI LCD Original PDF
    MG1200E Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1200E-MQFP352 Atmel Radiation Tolerant 0.6 Micron Sea of Gate Original PDF
    MG1200FXF1US51 Toshiba TRANS IGBT MODULE N-CH 3300V 1200A 9(2-193A1A) Original PDF
    MG1200FXF1US51 Toshiba TOSHIBA GTR Module Silicon N-Channel IGBT Original PDF
    MG1200FXF1US53 Toshiba TRANS IGBT MODULE N-CH 3300V 1200A Original PDF
    MG1200V1US51 Toshiba Original PDF
    MG1200V1US51 Toshiba GTR MODULE SILICON N-CHANNEL IGBT Scan PDF

    MG1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C


    Original     		PDF MG1200FXF1US51 MG1200FXF1US51

    MG1200FXF1US51

    Abstract: No abstract text available
    Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C


    Original     		PDF MG1200FXF1US51 MG1200FXF1US51

    MG1200FXF1US51

    Abstract: IGBT Guide YG6260
    Text: MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E


    Original     		PDF MG1200FXF1US51 MG1200FXF1US51 IGBT Guide YG6260

    MG1200FXF1US51

    Abstract: YG6260
    Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


    Original     		PDF MG1200FXF1US51 12transportation MG1200FXF1US51 YG6260

    MG1200V1US51

    Abstract: set igbt on off Vge
    Text: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES High Input Impedance Enhancement Mode Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C


    Original     		PDF MG1200V1US51 MG1200V1US51 set igbt on off Vge

    MG1200V1us51

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


    Original     		PDF MG1200V1US51/ MG1800V1US51 MG1200V1us51

    MG1200FXF1US53

    Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba
    Text: MG1200FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG1200FXF1US53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


    Original     		PDF MG1200FXF1US53 MG1200FXF1US53 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba

    Untitled

    Abstract: No abstract text available
    Text: MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications • High input impedance · Enhancement mode · Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


    Original     		PDF MG1200FXF1US51

    MG1200V1us51

    Abstract: No abstract text available
    Text: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES High Input Impedance Enhancement Mode Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C


    Original     		PDF MG1200V1US51 MG1200V1us51

    Untitled

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


    Original     		PDF MG1200V1US51/ MG1800V1US51

    MG1200FXF1US53

    Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
    Text: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT


    Original     		PDF MG1200FXF1US53 25degC) MG1200FXF1US53 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a

    Untitled

    Abstract: No abstract text available
    Text: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C


    Original     		PDF MG1200V1US51

    atmel 738

    Abstract: MG1070 ATMEL 706 MG1001 atmel 829
    Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS


    Original     		PDF out12, BOUT12 atmel 738 MG1070 ATMEL 706 MG1001 atmel 829

    automatic water level controller 7400 circuit

    Abstract: 7400 ecl inverter MATRA MHS MG1000E MG1004E MG1009E MG1014E MG1020E MG1033E MG1042E
    Text: MG1RT MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is


    Original     		PDF

    jtag 14

    Abstract: No abstract text available
    Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS


    Original     		PDF out12, BOUT12 jtag 14

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IEGT

    Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
    Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.


    Original     		PDF BEE0030A IEGT TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51

    amd 29050

    Abstract: VHDL CODE FOR PID CONTROLLERS 20630 Xilinx XC2000 LCC100 UD09 LCC84 UD10 8251 uart vhdl MCT8
    Text: Digital Integration Introduction When integrating the digital part of modern electronic systems, various technical and financial criteria must be considered. Over 10 years of ASIC experience have shown that no one methodology can meet all requirements at the same time.


    Original     		PDF 10-May-96 amd 29050 VHDL CODE FOR PID CONTROLLERS 20630 Xilinx XC2000 LCC100 UD09 LCC84 UD10 8251 uart vhdl MCT8

    Xtal Oscillators using 7400

    Abstract: MG1RT 7400 datasheet 2-input nand gate atmel 846 M6207 TTL 7400 propagation delay MG1000E MG1004E MG1009E MG1014E
    Text: MG1RT Radiation Tolerant 0.6 Micron Sea of Gates Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is


    Original     		PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    TRANSISTOR B737

    Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
    Text: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998


    Original     		PDF

    VQE 23 E

    Abstract: MG1200V1US51
    Text: TOSHIBA MG1200V1US51 TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT M G 1 2 0 0 V 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES • High Input Impedance • Enhancement Mode • Electrodes are isolated from case. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG1200V1US51 VQE 23 E MG1200V1US51

    Untitled

    Abstract: No abstract text available
    Text: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using


    OCR Scan     		PDF BOUT12

    84 LCC

    Abstract: g1140 IC TTL 7400 input leakage current
    Text: Tem ic MG1RT Semiconductors MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is


    OCR Scan     		PDF