MFQ6660P Search Results

MFQ6660P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MFQ6660 P/C		Motorola	European Master Selection Guide 1986		Scan	PDF

MFQ6660P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
mosfet cross reference Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is	Original	T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode	PDF
MFQ6660C Abstract: MFQ6660P Text: MOTOROLA SC XSTRS/R F 1ZE 0 I b3b75S4 QUAD DUAL-IN-LINE N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS FIELD EFFECT TRANSISTORS □Qfit. 75c? 3 I T Æ -2 5 MFQ6660C; P These TMOS Power FETs are designed fo r high current, high speed power switching applications such as switching power supplies, CMOS logic,	OCR Scan	b3b75S4 b3b72SM MFQ6660C, MFQ6660C MFQ6660P	PDF

Catalog Datasheet

Type

Document Tags

PDF

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

OCR Scan

SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

PDF

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

Original

T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

PDF

MFQ6660C

Abstract: MFQ6660P
Text: MOTOROLA SC XSTRS/R F 1ZE 0 I b3b75S4 QUAD DUAL-IN-LINE N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS FIELD EFFECT TRANSISTORS □Qfit. 75c? 3 I T Æ -2 5 MFQ6660C; P These TMOS Power FETs are designed fo r high current, high speed power switching applications such as switching power supplies, CMOS logic,

OCR Scan

b3b75S4 b3b72SM MFQ6660C, MFQ6660C MFQ6660P

PDF