METHOD2026 Search Results
METHOD2026 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SL22N thru SL24N Low VF Schottky Barrier Rectifiers P b Lead Pb -Free Features: * Batch Process Design, Excellent Power Dissipation Offers Better Reverse Leakage Current And Thermal Resistance. * Low Profile Surface Mounted Application in order to Optimize Board Space. |
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SL22N SL24N MIL-STD-19500/228 OD-323F 94-V0 26-Mar-2013 | |
MMBD770WContextual Info: DATA SHEET SOT-323 Unit: inch mm 70 Volts VOLTAGE 0.004(0.10)MIN. SURFACE MOUNT SCHOTTKY DIODES 250mA CURRENT 0.087(2.20) 0.070(1.80) FEATURES • Extremely low minority carrier lifetime 0.087(2.20) 0.078(2.00) MMBD770W • Low capacitance ( 0.4pF @ 20V typical ) |
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MMBD770W 2002/95/EC OT-323 IEC61249 OT-323, MIL-STD-750 Method2026 2012-REV MMBD770W | |
marking 05 PANJITContextual Info: RB411D Schottky Barrier Diode 40Volts VOLTAGE &855 17 500mA SOT-23 FEATURES Unit:inch(mm High Reliability Low Reverse Current 0.120(3.04) Ultra High-speed Switching 0.110(2.80) Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . |
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RB411D 40Volts 500mA OT-23 2002/95/EC IEC61249 OT-23, MIL-STD-750, Method2026 2012-REV marking 05 PANJIT | |
SMCJ300A
Abstract: SMCJ24CA marking code Bgg marking GJK
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E223045 SMC/DO-214AB DO-214A DO-201 MIL-STD-750, 10/1000sec. 50mVp-p SMCJ300A SMCJ24CA marking code Bgg marking GJK | |
SMAJ440
Abstract: marking code VE DO-214AC SMAJ440C XR 2026 SMAJ250
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E223045 SMA/DO-214AC DO-214AC. DO-201 MIL-STD-750, 10/1000sec. 50mVp-p SMAJ440 marking code VE DO-214AC SMAJ440C XR 2026 SMAJ250 | |
GBPC3606
Abstract: GBPC3610 gblio B380C15001 gbpc2506 BRIDGE 2W00SG K8L10 10BTC kwtc
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DF005M B40C80DM B380C800DM MIL-STD-750, E54214 2W005G B40C800G B250C800G B40C1OOOG B380C GBPC3606 GBPC3610 gblio B380C15001 gbpc2506 BRIDGE 2W00SG K8L10 10BTC kwtc | |
marking code 84L SOT-23Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage |
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BSS84 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750 Method2026 marking code 84L SOT-23 | |
Contextual Info: MMDT2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR VOLTAGE 60 Volts 2 mW POWER SOT-363 Unit:inch mm • Complementary Pair 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.074(1.90) • Epitaxial Planar Die Construction 0.010(0.25) |
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MMDT2227A OT-363 MMDT2907A-Type 2002/95/EC IEC61249 | |
p6smb15a
Abstract: smb 82a 400C SMB P6SMB400CA P6SMB200A P6SMB15CA 43C 1CA 6V8C
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E223045 SMB/DO-214AA 214AMolded DO--201 MIL-STD-750, 10/1000sec. 50mVp-p p6smb15a smb 82a 400C SMB P6SMB400CA P6SMB200A P6SMB15CA 43C 1CA 6V8C | |
Contextual Info: RB411D Schottky Barrier Diode VOLTAGE 40Volts 500mA SOT-23 FEATURES Unit:inch mm ラ】 High Reliability ラ Low Reverse Current 0.120(3.04) 0.110(2.80) ラ Ultra High-speed Switching ラ Lead free in comply with EU RoHS 2002/95/EC directives. ラ Green molding compound as per IEC61249 Std. . |
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RB411D 40Volts 500mA OT-23 2002/95/EC IEC61249 OT-23, MIL-STD-750, Method2026 ValuIEC61249 | |
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage |
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BSS84 OT-23 2002/95/EC IEC61249 OT-23 MIL-STD-750 Method2026 BSS84 T/R13 | |
Contextual Info: MBR1060HEWS SCHOTTKY BARRIER DIODE FEATURES 0.077 1.95 0.068(1.75) • SOD-323HE low profile package • Low forward voltage drop, low reverse current 0.004(0.1)MAX. 1 Ampere 0.055(1.40) 0.047(1.20) CURRENT 0.017(0.45) 60 Volts 0.030(0.75) VOLTAGE • High Efficiency |
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MBR1060HEWS OD-323HE 2002/95/EC IEC61249 OD-323HE, MIL-STD-750 Method2026 2012-REV | |
Contextual Info: PJDLLLC05 Low Capacitance TVS Diode Array This diode array is configured to prote ct up to two high speed data tra nsmission lines, used in Low Voltage Differential VOLTAGE Signal LVDS ports.Acting as a line terminator, minimizes overshoot and undershoot conditions due to bus impedance, as |
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PJDLLLC05 OT-563 IEC61000-4-2 2002/95/EC 2011-REV RB500V-40 PJDLLLC05 | |
Contextual Info: PJDLLLC05 Low Capacitance TVS Diode Array This diode array is configured to prote ct up to two high speed data tra nsmission lines, used in Low Voltage Differential VOLTAGE Signal LVDS ports.Acting as a line terminator, minimizes overshoot and undershoot conditions due to bus impedance, as |
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PJDLLLC05 OT-563 IEC61000-4-2 2002/95/EC 043-REV 2011-REV | |
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marking code 84L SOT-23
Abstract: sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23
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BSS84 OT-23 2002/95/EC IEC61249 MIL-STD-750 Method2026 BSS84 T/R13 marking code 84L SOT-23 sot-23 MARKING CODE GS 5 BSS84 marking code SOT-23 | |
SS1060HEWSContextual Info: SS1060HEWS SCHOTTKY BARRIER DIODE SOD-323HE • SOD-323HE low profile package • Low forward voltage drop, low reverse current 0.077 1.95 0.068(1.75) 0.004(0.1)MAX. 0.038(0.95) 0.025(0.65) FEATURES Unit:inch(mm) 0.055(1.40) 0.047(1.20) 1 Ampere CURRENT |
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SS1060HEWS OD-323HE 2002/95/EC IEC61249 OD-323HE OD-323HE, MIL-STD-750 Method2026 2011-REV SS1060HEWS | |
Contextual Info: MBR1040HEWS SCHOTTKY BARRIER DIODE FEATURES 0.077 1.95 0.068(1.75) • SOD-323HE low profile package • Low forward voltage drop, low reverse current 0.004(0.1)MAX. 1 Ampere 0.055(1.40) 0.047(1.20) CURRENT 0.017(0.45) 40 Volts 0.030(0.75) VOLTAGE • High Efficiency |
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MBR1040HEWS OD-323HE 2002/95/EC IEC61249 OD-323HE, MIL-STD-750 Method2026 2012-REV RB500V-40 | |
SMBJ8.5CA
Abstract: SMBJ15A SMBJ11CA SMBJ6.5CA SMBJ350A smbj21 smbj220 SMBJ300 SMBJ130A SMBJ170A
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E223045 SMB/DO-214AA 214AMolded MIL-STD-750, 20Capacitance 10/1000sec. 50mVp-p SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ6.5CA SMBJ350A smbj21 smbj220 SMBJ300 SMBJ130A SMBJ170A | |
SMDJ220CAContextual Info: SMDJ Transient 9ROWDJH6XSSUHVVRUV Series MERITEK UL E223045 FEATURES For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability. |
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E223045 SMC/DO-214AB MIL-STD-750, 10/1000sec. SMDJ220CA | |
ND SOT-323Contextual Info: BAT54W SERIES SURFACE MOUNT SCHOTTKY BARRIER VOLTAGE 30 Volts CURRENT 0.2 Amperes FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection. • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . Halogen Free |
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BAT54W 2002/95/EC IEC61249 OT-323, MIL-STD-750 Method2026 2011-REV RB500V-40 ND SOT-323 | |
Contextual Info: P4SMAFJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 400 Watts 8.5 to 170 Volts STAND-OFF VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Glass passivated junction • Low inductance • Ultra thin profile package for space constrained utilization |
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2002/95/EC IEC61249 MIL-STD-750 Method2026 2012-REV | |
Contextual Info: MMDT2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR VOLTAGE 60 Volts 200 mW POWER SOT-363 Unit:inch mm • Complementary Pair 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.074(1.90) • Epitaxial Planar Die Construction 0.010(0.25) |
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MMDT2227A OT-363 MMDT2907A-Type 2002/95/EC MIL-STD-750 Method2026 MMDT2222A | |
Contextual Info: P4SMAFJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 400 Watts 8.5 to 170 Volts STAND-OFF VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Glass passivated junction • Low inductance • Ultra thin profile package for space constrained utilization |
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2011/65/EU IEC61249 MIL-STD-750 Method2026 2012-REV | |
P4SMA15CA
Abstract: P4SMA250C P4SMA350CA P4SMA130CA
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E223045 SMA/DO-214AC 214AC. DO--201 MIL-STD-750, 50mVp-p P4SMA15CA P4SMA250C P4SMA350CA P4SMA130CA |