MESFET S PARAMETER Search Results

MGF1951A

Abstract: MGF1951A-01 MGF1951
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES

k MESFET S parameter

Abstract: MGF1953A MGF1953A-01 mesfet fet
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

k MESFET S parameter

Abstract: MGF1952A-01 MGF1952A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

MGF1954A-01

Abstract: k MESFET S parameter MGF1954A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It

Contextual Info: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control

NE6500379A

Abstract: NE6500379A-T1
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high

Contextual Info: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high

RF MESFET S parameters

Abstract: transistor GaAs FET s parameters NES2427P-30
Contextual Info: 30 W S-BAND TWIN NES2427P-30 POWER GaAs MESFET FEATURES • • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH DRAIN EFFICIENCY: 38% TYP HIGH LINEAR GAIN: 12 dB TYP PUSH-PULL TYPE N-CHANNEL GaAS MESFET PACKAGE OUTLINE T-86 45° R1.2 ± 0.3

L to Ku Band Low Noise GaAs MESFET

Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY

nec k 813

Abstract: NES1821P-30
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear

4435 ag

Abstract: 5q 1265 rf
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz

CHP2085

Abstract: phase shifter
Contextual Info: CHP2085 S-band Phase Shifter / Switch GaAs Monolithic Microwave IC 13 Description The CHP2085 is a S-band monolithic 5 bits phase shifter / switch. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and

siemens Pm 90 87

Abstract: PC 3131
Contextual Info: S IE M E N S CLX34 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for

s band

Abstract: CHA5082
Contextual Info: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: S IE M E N S CLX32 HiRelX-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for

04 monolithic amplifier

Contextual Info: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

NE6500496

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage

NE6501077

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage

hmt design data book

Abstract: TGA2602-SM J0357
Contextual Info: HMT-TQT-TGA2602-SM MESFET MODEL Model Features Broadband DC-6GHz Non-linear (Angelov model) Measurement validations: - DCIV - Multi bias S-parameter - Noise parameters - Single tone Power sweep (0.9 and 1.9GHz) - Two tone Power sweep (0.9 and 1.9GHz) - Load pull (0.9 and 1.9GHz)

PH ON 823 m 0233

Abstract: marking code PH 817
Contextual Info: S IE M E N S CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for

SiEMENS PM 350 98

Contextual Info: S IE M E N S CLX27 HiRel X-Band Ga As Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for

Contextual Info: S IE M E N S CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for

Contextual Info: S IE M E N S CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for