Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MESFET CURRENT RATING Search Results

    MESFET CURRENT RATING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    MESFET CURRENT RATING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3904

    Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
    Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV transistors56L MAX11014/MAX11015 2N3904 MAX11014BGTM MAX11015BGTM

    4.1 amplifier circuit diagram

    Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
    Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV transistors56L MAX11014/MAX11015 4.1 amplifier circuit diagram class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR

    2N3904

    Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
    Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV transistors56L MAX11014/MAX11015 2N3904 MAX11014BGTM MAX11015BGTM

    Untitled

    Abstract: No abstract text available
    Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV

    2N3904

    Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
    Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV MAX11014/MAX11015 2N3904 MAX11014BGTM MAX11015BGTM 55236 mesfet

    2N3904

    Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 819d
    Text: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV 2N3904 MAX11014BGTM MAX11015BGTM 819d

    2N3904

    Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
    Text: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF MAX11014/MAX11015 MAX11014 MAX11015 625mV 2N3904 MAX11014BGTM MAX11015BGTM

    Untitled

    Abstract: No abstract text available
    Text: 19-3985; Rev 2; 9/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A


    Original     		PDF 625mV MAX11014) MAX11015) 12-Bit 20MHz MAX11014/MAX11015 MAX11014/MAX11015

    Untitled

    Abstract: No abstract text available
    Text: R2005240 R2005240 Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) 3NOT FOR NEW DESIGNS Package: SOT-115J Product Description Features       GaAs HBT GaAs MESFET InGaP HBT INPUT OUTPUT NE W Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS


    Original     		PDF R2005240 200MHz OT-115J R2005240 DS130415

    sm 0038 receiver

    Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
    Text: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts


    Original     		PDF P35-1110 467/SM/00147/200 P35-1110-0 P35-1110-1 sm 0038 receiver Bookham Technology Bookham NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG

    356 opto

    Abstract: 80In/15pb/5ag P35-1110 NN12 P35-1110-0 P35-1110-1 micro-x 420 bookham
    Text: Data sheet MESFET for OPTO Receivers Features • General purpose amplifier in PIN FET receiver Performance Optimised to provide high gm • Transimpedance amplifier for wide band PIN FET receiver and low gate leakage • High gm, typically 45mS • Low gate leakage current,


    Original     		PDF P35-1110 P35-1110-0 P35-1110-1 467/SM/00147/200 356 opto 80In/15pb/5ag NN12 micro-x 420 bookham

    MA01503D

    Abstract: No abstract text available
    Text: MA01503D Low Noise Amplifier Die 8.0 - 11.0 GHz FEATURES •= •= Advanced Information Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance •= Excellent Return Loss •= Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS


    Original     		PDF MA01503D MA01503D

    ITT313503D

    Abstract: No abstract text available
    Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS


    Original     		PDF ITT313503D ITT313503D

    Untitled

    Abstract: No abstract text available
    Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D Balanced Three Stage LNA with Limiter FEATURES • • • • ADVANCED INFORMATION 8 to 11 GHz Operation 50 Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)


    Original     		PDF ITT313503D ITT313503D 150umX150um

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%


    Original     		PDF NE6500496 NE6500496 24-Hour NEC Microwave Semiconductors

    NE6500496

    Abstract: 173300 NEC Microwave Semiconductors
    Text: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%


    Original     		PDF NE6500496 NE6500496 24-Hour 173300 NEC Microwave Semiconductors

    NE6500496

    Abstract: NEC Microwave Semiconductors
    Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage


    Original     		PDF NE6500496 NE6500496 24-Hour NEC Microwave Semiconductors

    NE6501077

    Abstract: NEC Microwave Semiconductors nec microwave
    Text: L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY: 40%


    Original     		PDF NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors nec microwave

    TQTRX

    Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
    Text: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SMF-06300 ELECTRO NICS Samsung M icrow ave Sem iconductor G â ill O p tilT liZ G d Low Current GaAs FET 2 -1 2 GHz Description Features The SMF-06300 is a 600 im n-channel MESFET with 0.5 |xm gate length, utilizing Samsung Microwave’s gain/low current optimized G30 process. Ti/Pt/Au gate


    OCR Scan     		PDF SMF-06300 SMF-06300

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION Low Noise Amplifier Die 8.0 -1 1 .0 GHz ITT313503D FEATURES • • • • 8 to 11 GHz Operation 50 n Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process MAXIMUM RATINGS DESCRIPTION (Ta = 25 °C unless otherwise noted)


    OCR Scan     		PDF ITT313503D ITT313503D 150umX150um

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage


    OCR Scan     		PDF NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors

    NE650

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage


    OCR Scan     		PDF NE6501077 NE6501077 IS12I IS22I2 IS12I IS12S21I CA95054-1B17 24-Hour NE650

    152900

    Abstract: NEC Microwave Semiconductors
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 11.5 dB V dsx Drain to Source Voltage V


    OCR Scan     		PDF NE6500496 NE6500496 988-0W9 24-Hour 152900 NEC Microwave Semiconductors