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    ME MARKING ST MAKE Search Results

    ME MARKING ST MAKE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    ME MARKING ST MAKE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STG94L

    Abstract: STG97L honeywell transmitters st 3000 TAG 8922 honeywell experion PKS 400 41101 FC33338 STG94L-E1A-00000-AN STG98L NE43
    Text: ST 3000 Smart Transmitter Series 900 Flush Mount Models Specifications 34-ST-03-73 July 2010 Introduction In 1983, Honeywell introduced the first Smart Pressure Transmitter― the ST 3000 . In 1989, Honeywell launched the first all digital, bi-directional protocol for


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    34-ST-03-73 STG93P 34-ST-03-73 STG94L STG97L honeywell transmitters st 3000 TAG 8922 honeywell experion PKS 400 41101 FC33338 STG94L-E1A-00000-AN STG98L NE43 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4403TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts SOT-563 FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -500mA • In compliance with EU RoHS 2002/95/EC directives


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    MMDT4403TB6 OT-563 -500mA 2002/95/EC OT-563, MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4403TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts SOT-563 200 mWatts Unit:inch mm • Collector-emitter voltage V CE = -40V 0.044(1.10) 0.035(0.90) • PNP epitaxial silicon, planar design • Collector current I C = -500mA


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    MMDT4403TB6 -500mA 2002/95/EC IEC61249 OT-563 OT-563, MIL-STD-750, PDF

    Schottky Diodes

    Abstract: No abstract text available
    Text: RB751V-40 SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 300 mA CURRENT 40 Volts SOD-323 Unit:inch mm FEATURES • Extremely Fast Switching Speed 0.078(1.95) 0.068(1.75) • Very Low V F : 0.325V (Typ) at I F = 1mA • Surface mount package ideally suited for autmatic insertion


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    RB751V-40 OD-323 OD-323, MIL-STD-750, RB500V-40 Schottky Diodes PDF

    Untitled

    Abstract: No abstract text available
    Text: RB501V-40 SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 45 Volts 100 mA CURRENT SOD-323 Unit:inch mm FEATURES • Extremely Fast Switching Speed 0.078(1.95) 0.068(1.75) • Very Low V F : 0.32V (Typ) at I F = 10mA • Surface mount package ideally suited for autmatic insertion


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    RB501V-40 OD-323 OD-323, MIL-STD-750, RB500V-40 PDF

    wA MARKING SOT-23 SERIES DIODE

    Abstract: DIODE MARKING VA SOT-23
    Text: BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES 100 Volts POWER SOT-23 250mWatts Unit:inch mm • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz


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    BAS116/BAW156/BAV170/BAV199 250mWatts OT-23 OT-23 MIL-STD-750, BAS116: BAW156 BAV170 BAV199 wA MARKING SOT-23 SERIES DIODE DIODE MARKING VA SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: RB500V-40 SURFACE MOUNT SCHOTTKY DIODES VOLTAGE 45 Volts SOD-323 100 mA CURRENT Unit:inch mm FEATURES • Extremely Fast Switching Speed 0.078(1.95) 0.068(1.75) • Very Low V F : 0.37V (Typ) at I F = 10mA • Surface mount package ideally suited for autmatic insertion


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    RB500V-40 2002/95/EC IEC61249 OD-323 OD-323, MIL-STD-750, RB500V-40 PDF

    ALY SMD

    Abstract: PVC AM22 density PVC AM3 W23 ABIT AL8 Series SMD MARKING CODE ALY gu 81 y2 smd code smd marking STPA STM-16 LIU SMD ALY
    Text: :50 AM SUNI-12xJET ASSP Telecom Standard Product Data Sheet Preliminary gu on da y, 12 Au S/UNI-12xJET st, 20 02 04 :20 PM5383 Data Sheet Preliminary Issue No. 2: July 2002 Do wn loa de d by ah m ed me tw aly of sil ico ne xp er to nM Saturn User Network Interface Device


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    SUNI-12xJET S/UNI-12xJET PM5383 PMC-2010376, ALY SMD PVC AM22 density PVC AM3 W23 ABIT AL8 Series SMD MARKING CODE ALY gu 81 y2 smd code smd marking STPA STM-16 LIU SMD ALY PDF

    diode GU do-214aA

    Abstract: STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


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    DO-214AA) E136224 diode GU do-214aA STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode PDF

    transil marking EM

    Abstract: No abstract text available
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


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    DO-214AA) transil marking EM PDF

    ST marking code GL

    Abstract: marking codes ER diode SMB Part Marking STMicroelectronics SM6T68CA STMicroelectronics DIODE marking code DX diode GU do-214aA GW marking code diode st Diode marking EE STMicroelectronics DIODE marking code Et DIODE SM6T75A SM6T56A
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


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    DO-214AA) E136224 ST marking code GL marking codes ER diode SMB Part Marking STMicroelectronics SM6T68CA STMicroelectronics DIODE marking code DX diode GU do-214aA GW marking code diode st Diode marking EE STMicroelectronics DIODE marking code Et DIODE SM6T75A SM6T56A PDF

    transil sm6t

    Abstract: sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb
    Text: SM6T Transil Features • Peak Pulse Power: 600 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 220 V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time K ■ UL recognized Unidirectional A Bidirectional Description


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    DO-214AA) transil sm6t sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb PDF

    marking CODE GA

    Abstract: No abstract text available
    Text: PJA55P03 30V P-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 4.3 Amperes • RDS ON , VGS@-10V,ID@-4.3A < 48 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.008(0.20) 0.111(2.82) 0.024(0.6) 0.119(3.02)


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    PJA55P03 2002/95/EC IEC61249 OT-23-1 2011-REV RB500V-40 marking CODE GA PDF

    Marking code L SOD323

    Abstract: marking 355
    Text: 1SS355 SURFACE MOUNT SWITCHING DIODE VOLTAGE 200 mW POWER 90 Volts SOD-323 Unit:inch mm FEATURES • Small surgace mounting type (SOD-323) • High Speed (TRR=1.2ns Typ) 0.078(1.95) 0.068(1.75) • High reliability with surge current handing capability


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    1SS355 OD-323) 2002/95/EC IEC61249 OD-323 OD-323 MIL-STD-750 RB500V-40 Marking code L SOD323 marking 355 PDF

    honeywell dcs manual

    Abstract: DIN19213 F3399 STG14L FC33338 STG180 STA12L STG140 silicone dc200 STA140
    Text: ST 3000 Smart Transmitter Series 100 Absolute Pressure Models STA122/STA12L 0 to 780 mmHgA STA140/STA14L 0 to 500 psia 0 to 1,040 mbarA 0 to 35 barA 34-ST-03-61 2/08 Specification and Model Selection Guide Introduction In 1983, Honeywell introduced the first


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    STA122/STA12L STA140/STA14L 34-ST-03-61 ST-89 honeywell dcs manual DIN19213 F3399 STG14L FC33338 STG180 STA12L STG140 silicone dc200 STA140 PDF

    k72 sot-23

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


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    2N7002K 500mA OT-23 200mA 2010-REV RB500V-40 k72 sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


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    2N7002K OT-23 500mA 200mA OT-23 2010-REV RB500V-40 PDF

    SDTNFAH-512

    Abstract: SDTNFAH-128 SDTNFAH-256 hy27uf082g2 TC58DVG04b1FT HY27US08121 TH58DVG hy27us08281 sdtngche0-512 SDTNFbH-1024
    Text: Create i5062-ZD i5062-ZD USB Flash Disk Controller Data Sheet iCreate Technologies Corporation Release date: 08/25/2005 2005 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.


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    i5062-ZD 256MByte) 512MByte) 128MByte) NAND128W3A NAND256W3A NAND512W3A SDTNFAH-512 SDTNFAH-128 SDTNFAH-256 hy27uf082g2 TC58DVG04b1FT HY27US08121 TH58DVG hy27us08281 sdtngche0-512 SDTNFbH-1024 PDF

    hy27ub082g4m

    Abstract: SDTNGAHE0-256 SDTNFAH-128 TC58DVG04b1FT MT29F2G08AAA sdtnfah-512 SDTNGCHE0-2048 K9F1G08U0 HYF33DS512800ATC SDTNFAH-256
    Text: Create i5062-ZD i5062-ZD USB Flash Disk Controller Data Sheet iCreate Technologies Corporation Release date: 03/10/2005 2005 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.


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    i5062-ZD 512Mbit 64MByte) 128MByte) 256MByte) hy27ub082g4m SDTNGAHE0-256 SDTNFAH-128 TC58DVG04b1FT MT29F2G08AAA sdtnfah-512 SDTNGCHE0-2048 K9F1G08U0 HYF33DS512800ATC SDTNFAH-256 PDF

    iCreate Technologies

    Abstract: HN29v12811 icreate iCreate Technologies Corporation HN29V6411 iCreate Technologies Corp. Flash HN29V102414 HN29V51211 HN29W12811 HN29W25611
    Text: Create i5068-Z i5068-Z USB Flash Disk Controller Data Sheet iCreate Technologies Corporation Release date: 9/2/2004 2004 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.


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    i5068-Z 64Mbit 128Mbit 16MByte) 256Mbit 32MByte) 512Mbit iCreate Technologies HN29v12811 icreate iCreate Technologies Corporation HN29V6411 iCreate Technologies Corp. Flash HN29V102414 HN29V51211 HN29W12811 HN29W25611 PDF

    SDTNGCHE0-2048

    Abstract: SDTNFAH-128 SDTNGAHE0-128 Sandisk TSOP
    Text: Cre a t e i5062-ZD i5062-ZD USB Flash Disk Controller Data Sheet iCreate Technologies Corporation Release date: 08/25/2005 2005 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized. iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.


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    i5062-ZD 512MByte) 128MByte) 256MByte) NAND128W3A NAND256W3A NAND512W3A TC58128FT, SDTNGCHE0-2048 SDTNFAH-128 SDTNGAHE0-128 Sandisk TSOP PDF

    SC5231

    Abstract: No abstract text available
    Text: SA0YO NEW PRODUCT S M C P S u p e r Mini C h i p P a c k T r a n s i s t o r s e r i e s The n e w l y d e v e l o p e d S a ny o SMCP pack ag e can make the sets more compact and slimmer because of a super mini package. We h a v e va ri o u s pr o d u c t s for su ch a p p l ic at io ns as shown below. In addition, we can provide you with re el-style packing


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    2SA1965 2SC4919 2SC4851 SC5231 PDF

    Untitled

    Abstract: No abstract text available
    Text: r AU ST IN S E M I C O N D U C T O R INC bGE ]> TÜQ2117 DGODITM T77 « A U S T MT42C4064 883C 64K X 4 VRAM M I C R O N . T - '- l f c - 'î - V Z û MILITARY VRAM 64K X 4 DRAM WITH 256 X 4 SAM PIN ASSIGNMENT Top View • MIL-STD-883, Class B 24-Pin DIP


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    Q2117 MT42C4064 MIL-STD-883, 24-Pin MIL-STD-883 PDF

    IR3P90B

    Abstract: IR3P90 GC246 BJ206
    Text: SHARP [ I R 3 P 9 0 B ] C O N T E N T S I. II. Description Terminal Connections III. Terminal Name IV. Block Diagram V. VI. VII. VIII. IX. X. Basic Connection Diagram Input/Output Circuit Type Description of Functional Operation Absolute Maximum Ratings Electrical Characteristics


    OCR Scan
    IR3P90B AA873 BJ206 IR3P90 GC246 PDF