mdt10p621
Abstract: No abstract text available
Text: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high
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MDT10P621N
16-bit
oMDT10P621N
4Kx14
MDT10P621N)
192X8
mdt10p621
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MDT10P621
Abstract: 20MHZ pa 4010 12OSC1
Text: MDT10P621 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断
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MDT10P621
PORTB74
20MHZ
200ns
MDT10P
192X8
MDT10P621
20MHZ
pa 4010
12OSC1
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MDT10P62
Abstract: MDT10P
Text: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62
16-bit
MDT10P
128X8
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20MHZ
Abstract: 100nnn
Text: MDT10P621N AB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断
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MDT10P621N
PORTB74
MDT10P621N
20MHZ
200ns
4Kx14
MDT10P621N)
192X8
20MHZ
100nnn
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Untitled
Abstract: No abstract text available
Text: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62N
16-bit
2Kx14
MDT10P62N)
128X8
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20MHZ
Abstract: MDT10P62 12OSC1 MDT10P621
Text: MDT10P62 .1. 概述 -CCP,SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟/记数器
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MDT10P62
20MHZ
200ns
PORTB74
1MDT10P
128X8
20MHZ
MDT10P62
12OSC1
MDT10P621
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MDT10P621
Abstract: MDT10P
Text: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip
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MDT10P621
16-bit
192X8
MDT10P
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20MHZ
Abstract: MDT10P62 MDT10P
Text: MDT10P62 BB .1. 概述 -CCP,SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟/记数器
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MDT10P62
MDT10P62
20MHZ
200ns
PORTB74
MDT10P
128X8
20MHZ
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MDT10P62N
Abstract: 20MHZ
Text: MDT10P62N AB .1. 概述 -CCP,SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟/记数器
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MDT10P62N
MDT10P62N
20MHZ
200ns
PORTB74
2Kx14
MDT10P62N)
20MHZ
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MDT10P621
Abstract: 1u 5V
Text: MDT10P621 -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip
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MDT10P621
16-bit
MDT10P621
1u 5V
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MDT10P621
Abstract: MDT10P 20MHZ 4KX14
Text: MDT10P621 BB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断
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MDT10P621
PORTB74
MDT10P621
20MHZ
200ns
specificat14
MDT10P
192X8
20MHZ
4KX14
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MDT10P621
Abstract: No abstract text available
Text: MDT10P621 -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip
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MDT10P621
16-bit
192X8
MDT10P621
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MDT10P62
Abstract: No abstract text available
Text: MDT10P62 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed u TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and high
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MDT10P62
16-bit
MDT10P62
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IC TTL 4700
Abstract: 124u RT 8284 N ldr 6k MDT10P622 265u ccp 8
Text: MDT10P622 1概述: 这个 8BIT OTP 的微控制器是由完全静 ◆ 当 PED 是关闭时上电复位(POR)启用 ◆ 电源边沿检测复位 PED 态 CMOS 技术设计,集高速、体积小、低 ◆ 中断源 功耗和高抗干扰性为一体的芯片。内存包括
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MDT10P622
16bit
IC TTL 4700
124u
RT 8284 N
ldr 6k
MDT10P622
265u
ccp 8
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MDT10P62
Abstract: No abstract text available
Text: MDT10P62 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62
16-bit
MDT10P
128X8
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Device-List
Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z8E000
ADP-Z8E001
Z8E001
Z90231
ADP-Z90259-SD
Z90241
ADP-Z90241-SD
Device-List
CF775 MICROCHIP
24LC211
ae29F2008
im4a3-32
CNV-PLCC-MPU51
ep320ipc
cf745 04 p
ALL-11P3
29lv640
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