MD3251F Search Results

m0325

Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.

Contextual Info: MOTOROLA SC ÍXSTRS/R 6367254 I> F Jb 3 t,7 5 5 L | F> MOTOROLA SC XSTRS/R F O O Ô E 4 4fl 96D 8 2 4 4 8 _7*- □ D - 'U 7 M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

Contextual Info: 'l.Eis.s.u £e.mi-C.onau £oi Lpioaucti, Una. tJ £/ TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA Mo3250,A,F, AF M D 3251,A,F,AF VCEO = 40V |c = 50 mA CASE 33 (TO-89) Dual PNP silicon annular transistors, especially

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

MW front END

Abstract: MD3250 MD3250F MD3251 MD3251F MQ3251
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 M ULTIPLE SILICON AN N U LA R TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation

MD7003A

Abstract: 82474 MD3250 MD3251 MD3251F MD7003 MQ3251 MQ7003 MD3251A transistor 228
Contextual Info: MOTOROLA ]>F|b3b7554 SC Í X S T R S / R F> 6367254 MOTOROLA SC XSTRS/R ODñH44ñ 96D 8 2 4 4 8 _T*- F D 7 M A X IM U M R A T IN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage