MCR2324H Search Results

Contextual Info: MCR2324H Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V) V(RRM) Max. (V) I(T) Rated Maximum (A)1 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)15¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)200u V(GT) Max.(V)800m I(H) Max. (A) Holding Current2m

Contextual Info: MOTOROLA SC D I O D E S / O P T O BTE ]> Bi b3b725S Q0Ö2113 M B1 M0T 7 13 MOTOROLA SEMICONDUCTOR r TECHNICAL DATA MCR2323H,AH MCR2324H,AH MCR2326H,AH MCR2328H,AH M M urn¡a Discrete Military Operation Processed per MIL-S-19500/276 Silicon Controlled Rectifiers

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor