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    MBT3906 Search Results

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    MBT3906 Price and Stock

    Rochester Electronics LLC MMBT3906K

    TRANS PNP 40V 0.2A SOT-23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906K Bulk 865,626 11,539
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    Rochester Electronics LLC NMBT3906VL

    NEXPERIA NMBT3906 - PNP SWITCHIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NMBT3906VL Bulk 400,000 13,172
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    Rochester Electronics LLC MMBT3906-G

    TRANS PNP 40V 0.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906-G Bulk 191,670 11,539
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    Rochester Electronics LLC MMBT3906WT1

    TRANS PNP 40V 0.2A SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906WT1 Bulk 141,750 11,539
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    Rochester Electronics LLC MMBT3906SL

    TRANS PNP 40V 0.2A SOT-923F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906SL Bulk 121,755 8,876
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    MMBT3906SL Bulk 109,849 8,876
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    Find more MBT3906 price and stock on Findchips.com

    MBT3906 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBT3906DW Unknown Dual General Purpose Transistor PNP+PNP Silicon Original PDF
    MBT3906DW Weitron Dual General Purpose Transistor PNP+PNP Silicon Original PDF
    MBT3906DW1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3906DW1T1 E-Tech Electronics Dual General Purpose Transistors Original PDF
    MBT3906DW1T1 Leshan Radio Company Dual General Purpose Transistors Original PDF
    MBT3906DW1T1 Motorola Dual General Purpose Transistors Original PDF
    MBT3906DW1(T1) Unknown Silicon PNP Transistor Original PDF
    MBT3906DW1T1 On Semiconductor MBT3906 - TRANSISTOR 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-88, 6 PIN, BIP General Purpose Small Signal Original PDF
    MBT3906DW1T1 On Semiconductor Dual General Purpose Transistors Original PDF
    MBT3906DW1T1-D On Semiconductor Dual General Purpose Transistor Original PDF
    MBT3906DW1T1G On Semiconductor Dual General Purpose Transistor Original PDF
    MBT3906DW1T2G On Semiconductor MBT3906 - Dual PNP Bipolar Transistor Original PDF

    MBT3906 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original     		MBT3906DW OT-363 SC-88) MMBT3906DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 23/SOT MBT3906DW1T1 363/SC PDF

    1N916

    Abstract: MBT3906DW1T1
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 MBT3906DW1T1 23/SOT 363/SC r14525 MBT3906DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW1T1 MBT3906DW1T1G
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 MBT3906DW1T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PDF

    EE-43007

    Abstract: EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111
    Text: DN06023/D Design Note – DN06023/D Universal AC 15 W 4 Cell Charger Device Application Input Voltage Output Power Topology I/O Isolation MBT3906 MC33340 NCP1055 NIS6111 4 Cell NiCd-NiMH Battery Charger Universal 90-264 Vac 15 Watt Flyback Optional Other Specifications


    Original     		DN06023/D MBT3906 MC33340 NCP1055 NIS6111 EE-43007 EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1, SMBT3906DW1 MBT3906DW1 OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D PDF

    MBT3904DW1T1

    Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3904DW1T1 SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1 PDF

    MBT3906DW1T1G

    Abstract: 1N916
    Text: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW VCE-30
    Text: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 VCE-30 PDF

    MBT3904 datasheet

    Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original     		MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC STYLE00 MBT3904 MBT3904 datasheet MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 PDF

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		MBT3904DWlT1/D MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DWI MBT3906DWI MBT3946DWI 14WI-247 MBT3906DWITI MBT390 MBT3946DW1 MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G 23/SOTâ MBT3906DW1T1/D PDF

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Text: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


    Original     		SC-88, OT-363 419B-02 OT-563 63A-01 SO-16 751B-05 "dual TRANSISTORs" pnp npn BC847CPDW1T1 dual pnp BC858CDW1T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D PDF

    1N916

    Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Text: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 1N916 MBT3904DW1T1 MBT3906DW1T1 PDF

    5070H

    Abstract: MBT3904 datasheet MBT3904 MBT3904DW1T1 MBT3946 MBT3906DW1T1 MBT3946DW1T1
    Text: Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original     		MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC MBT3904 5070H MBT3904 datasheet MBT3904DW1T1 MBT3946 MBT3906DW1T1 PDF

    1N916

    Abstract: MBT3906DW
    Text: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original     		MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PDF

    MBT3906DW

    Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Text: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW 1N916 MBT3904DW1T1 MBT3906DW1T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1 OT-363/SC-88 PDF

    1N916

    Abstract: MBT3906DW
    Text: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original     		MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 PDF