MBR20020 Search Results

MBR20020 Price and Stock

Filter by Manufacturer


GeneSic Semiconductor Inc MBR20020CT DIODE MOD SCHOTT 20V 200A 2TOWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR20020CT	Bulk			80	1 - 10 - 100 $75.1625 1000 $75.1625 10000 $75.1625	Buy Now
Mouser Electronics	MBR20020CT					1 - 10 - 100 $75.16 1000 $75.16 10000 $75.16	Get Quote
NAC	MBR20020CT				25	1 - 10 - 100 $88.38 1000 $88.38 10000 $88.38	Buy Now
GeneSic Semiconductor Inc MBR200200CT DIODE MOD SCHOT 200V 100A 2TOWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR200200CT	Bulk			80	1 - 10 - 100 $75.1625 1000 $75.1625 10000 $75.1625	Buy Now
Mouser Electronics	MBR200200CT					1 - 10 - 100 $75.16 1000 $75.16 10000 $75.16	Get Quote
NAC	MBR200200CT				25	1 - 10 - 100 $88.38 1000 $88.38 10000 $88.38	Buy Now
GeneSic Semiconductor Inc MBR20020CTR DIODE MOD SCHOTT 20V 200A 2TOWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR20020CTR	Bulk			80	1 - 10 - 100 $75.1625 1000 $75.1625 10000 $75.1625	Buy Now
Mouser Electronics	MBR20020CTR					1 - 10 - 100 $75.16 1000 $75.16 10000 $75.16	Get Quote
NAC	MBR20020CTR				25	1 - 10 - 100 $88.38 1000 $88.38 10000 $88.38	Buy Now
GeneSic Semiconductor Inc MBR200200CTR DIODE MOD SCHOT 200V 100A 2TOWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR200200CTR	Bulk			80	1 - 10 - 100 $75.1625 1000 $75.1625 10000 $75.1625	Buy Now
Mouser Electronics	MBR200200CTR					1 - 10 - 100 $75.16 1000 $75.16 10000 $75.16	Get Quote
NAC	MBR200200CTR				25	1 - 10 - 100 $88.38 1000 $88.38 10000 $88.38	Buy Now
Navitas Semiconductor MBR200200CT Silicon Rectifier Module - Schottky (Std Config) - 200V - 200A - Twin Tower
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	MBR200200CT					1 - 10 - 100 $74.59 1000 $74.59 10000 $74.59	Buy Now

Find more MBR20020 price and stock on Findchips.com

MBR20020 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
MBR20020	Micro Commercial Components	200 Amp Rectifier 20 to 100 Volts Schottky Barrier	Original	PDF
MBR20020	Transys Electronics	SCHOTTKY DIODES MODULE TYPE 200A	Original	PDF
MBR200200CT	GeneSiC Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 100A 2 TOWER	Original	PDF
MBR200200CTR	GeneSiC Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 100A 2 TOWER	Original	PDF
MBR20020CT	America Semiconductor	HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules	Original	PDF
MBR20020CT	GeneSiC Semiconductor	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER	Original	PDF
MBR20020CT	Micro Commercial Components	200 Amp Rectifier 20 to 100 Volts Schottky Barrier	Original	PDF
MBR20020CT	Micro Commercial Components	200 Amp Schottky Barrier Rectifier 20 Volts	Original	PDF
MBR20020CT	Transys Electronics	SCHOTTKY DIODES MODULE TYPE 200A	Original	PDF
MBR20020CT	America Semiconductor	MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules	Scan	PDF
MBR20020CTL	Motorola	European Master Selection Guide 1986	Scan	PDF
MBR20020CTL	Motorola	Switchmode Datasheet	Scan	PDF
MBR20020CTR	America Semiconductor	HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules	Original	PDF
MBR20020CTR	GeneSiC Semiconductor	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER	Original	PDF

MBR20020CTR	America Semiconductor	MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules	Scan	PDF

MBR20020 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	PDF	MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT
Untitled Abstract: No abstract text available Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	PDF	MBR20020CT MBR20040CTR MBR20030CT MBR20035CT MBR20040CT
MBR20045CT Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT Text: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175	Original	PDF	MBR20020CT MBR200100CT 200Amp MBR20040CT MBR20045CT MBR20080CT MBR20060CT MBR20035CT MBR20030CT
MBR20080 Abstract: MBR200100 MBR20020 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 Text: Transys MBR20020 R THRU MBR200100(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE G Maximum Ratings D Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175	Original	PDF	MBR20020 MBR200100 200Amp MBR20020( MBR20030( MBR20035( MBR20040( MBR20045( MBR20060( MBR20080( MBR20080 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060
MBR200100CT Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT Text: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175	Original	PDF	MBR20020CT MBR200100CT 200Amp MBR20035CT MBR20030CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
Untitled Abstract: No abstract text available Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	PDF	MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT 175se
MBR200150CT(R) Abstract: Twin Tower Text: MBR200150CT R DACO SEMICONDUCTOR CO., LTD. THRU MBR200200CT(R) SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V RRM Twin Tower A Maximum Ratings R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150	Original	PDF	MBR200150CT MBR200200CT 200Amp MBR200200CT MBR200150CT(R) Twin Tower
200100CT Abstract: MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT Text: MCC MBR20020CT omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU MBR200100CT Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton	Original	PDF	MBR20020CT MBR200100CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT 200100CT MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT
AV200A Abstract: No abstract text available Text: MCC MBR20020 THRU MBR200100 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton	Original	PDF	MBR20020 MBR200100 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080 AV200A
MBR20020CT Abstract: MBR20030CT MBR20035CT MBR20040CT Text: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	PDF	MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20030CT MBR20035CT MBR20040CT
Untitled Abstract: No abstract text available Text: MBR200150CT thru MBR200200CTR Silicon Power Schottky Diode VRRM = 150 V - 200 V IF AV = 200 A Features • High Surge Capability • Types from 150 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	PDF	MBR200150CT MBR200200CTR MBR200200CT
MBR200100CT Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT Text: MCC MBR20020CT THRU MBR200100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton	Original	PDF	MBR20020CT MBR200100CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
MBR200100 Abstract: MBR20020 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080 Text: DACO SEMICONDUCTOR CO., LTD. MBR20020 R THRU MBR200100(R) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE G Maximum Ratings D Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175	Original	PDF	MBR20020 MBR200100 200Amp MBR20020( MBR20030( MBR20035( MBR20040( MBR20045( MBR20060( MBR20080( MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080
MBR20020CT Abstract: No abstract text available Text: Naina Semiconductor Ltd. MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified	Original	PDF	MBR20020CT MBR20040CTR MBR20020CT MBR20030CT MBR20035CT MBR20040CT

MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	PDF	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	PDF	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	PDF	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	PDF	ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
bys75-50 Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT Text: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT	OCR Scan	PDF	357B-01 MBR20020CTL* BYS75-30* MBR20030CTL* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT bys75-50 MBR20030CTL mbr6535 MBR6545 BYS75-45 MBR20020CTL BYS75-30
MBR60035CTL Abstract: MBR20030CTL MBR20025CTL MBR30050CT MBR20015CTL Text: M O T O R O L A SC D I O D E S / O P T O 3TE D B b 3 b ? 2 5 5 GGfl30D4 M • M 0 T 7 T ^ 3 -cl *Iq , A V ERA G E RECTIFIED FO RW ARD C U R REN T (Amperes) 200 300 600 3570-01 PO W ER TAP O-W-i 0+H° V r RM (Volts) 15 MBR20015CTL 20 MBR20020CTL 25 MBR20025CTL	OCR Scan	PDF	GGfl30D4 MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR30035CT MBR60030CTL MBR60035CTL MBR30045CT MBR30050CT
MBR20030CTL Abstract: MBR20025CTL R20025C Text: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:	OCR Scan	PDF	b3fci72SS MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL MBR20030CTL MBR20025CTL, R20025C
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan	PDF

Privacy Settings

MBR20020 Search Results

MBR20020 Price and Stock

GeneSic Semiconductor Inc MBR20020CT

GeneSic Semiconductor Inc MBR200200CT

GeneSic Semiconductor Inc MBR20020CTR

GeneSic Semiconductor Inc MBR200200CTR

Navitas Semiconductor MBR200200CT

MBR20020 Datasheets (15)

MBR20020 Datasheets Context Search

Untitled

Untitled

MBR20045CT

MBR20080

MBR200100CT

Untitled

MBR200150CT(R)

200100CT

AV200A

MBR20020CT

Untitled

MBR200100CT

MBR200100

MBR20020CT

MUR1560 equivalent

1n5822 trr

OZ 9983

Diode 1N4007 DO-7 Rectifier Diode

MLED96

bys75-50

MBR60035CTL

MBR20030CTL

triac zd 607

20N15