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    MBN3600E17F

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10024 R0 MBN3600E17F Preliminary Specification Silicon N-channel IGBT 1700V F version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT.  Low driving power: Low input capacitance advanced trench gate.


    Original     		IGBT-SP-10024 MBN3600E17F MBN3600E17F PDF

    MBN3600E17F

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-10024 R0 MBN3600E17F Preliminary Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		IGBT-SP-10024 MBN3600E17F MBN3600E17F Hitachi DSA00281 PDF