MBM29F400BA Search Results

Contextual Info: FLASH MEMORY CMOS 4M 512K X 8/256K x 16 MBM29F400TA 70 - /- 90/-1 2/MBM29F400BA - 70/ - 90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

400BA

Abstract: FPT-48P-M19 MBM29F400TA/BA-70
Contextual Info: ^t c\o FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -2 0 8 1 2 -1 E ft FLASH MEMORY C M O S 4M 512K 8/256K x 16 X MBM29F400TA/MBM29F400BA • DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

A13 MARKING CODE

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29F400BA DS05-20812-3E mbm29f400ta-90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20812-3E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 MBM29F400TA/MBM29F400BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: MBM29F400BA-12PF 1/2 IL08 4 M (524,288 x 8/262,144 x 16)-BIT FLASH MEMORY —TOP VIEW— 3 RY/BY OUT A17 IN 1 NC 44 RESET 2 43 WE 3 42 A8 34 IN 35 IN 36 IN 37 IN 38 A7 IN 4 41 A9 A6 IN 5 40 A10 39 A5 IN 6 39 A11 IN 40 41 IN A4 IN 7 38 A12 IN A3 IN 8 37 A13

Contextual Info: FLASH MEMORY B l I l i 4 M 512 K x 8 /256 K x 16 BIT M BM29 F400TA/BA-90-X/-12-x • FEATURES • •

Contextual Info: ? BMI FUJITSU SEMICONDUCTOR DATA SHEET • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts

29f400* Fujitsu

Abstract: fujitsu 29f400 29f400 fujitsu
Contextual Info: MCU-AN-391015-E-V11 Fujitsu Microelectronics Europe Application Note FR30 example interface to external Flash Memory Fujitsu Microelectronics Europe GmbH, Microcontroller Application Group History th 13 Oct. 99 04th Jul. 00 MM MEN V1.0 V1.1 New Format, new updated version

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

MBM29F400BA-90-V

Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT MBM29 F400TA-90-v -12-v/M BM29 F400B A-90-v-12-v • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

flash 48pin dqs

Abstract: programming mbm29F400
Contextual Info: FLASHM EM ORY CMOS M BM29F40GTA/BÄÄx^i 2-x • FEATURES • • • • • • • • • • • • • • • Single 5.0V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as EzPROMs

marking AVW

Contextual Info: Q R -IM G -10 Revn : Nil Date : 23.05.1997 Aspect Development Inc. DISCLAIMER During the production process, it was found that pages within this section is not numbered sequentially by the manufacturer. Please read page 48 after page 45 and omit the page s 46 & 47. Aspect

Contextual Info: FLASHMEMORY CMOS MBM29F4ÖÖTÄ#o/Äi 2/MBM29F400 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as EzPROMs • Compatible with JEDEC-standard world-wide pinouts

Contextual Info: 1 Application Note FR30 example interface to external Flash Memory  Fujitsu Mikroelektronik GmbH 1.12.1997 Vers. 1.0 by M.Mierse This application note shows how to interface from an MB91101 FR30 device to an external flash memory. As target hardware, the FR30 evaluation board is used in this example. On this

MBM29F800

Abstract: MBM29F400 MBM29F800BA-90PFTR-SFK MBM29LV800 MBM29LV650 mbm29f MBM29F033 MBM29LV650UE90TR-LE1 MBM29PL160TD MBM29F040C
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 15, 2005 Advanced Change Notification No: Subject: 2548 Obsolescence of reverse-TSOP packages and specific speed grade of a product listed below Spansion LLC is announcing the retirement of reverse-TSOP packages in efforts to consolidate and

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

MBM29F400BA

Abstract: MBM29F200BA
Contextual Info: Flash Memory 1 Flash Memory (5V ONLY) Ta= -20°C to +70°C Power Consumption Organization (W x b ) 256Kx8 256Kx8 128Kx16 512Kx8 512Kx8 256K x16 Part Number MBM29F002T-70 MBM29F002B-70 MBM29F002T-90 MBM29F002B-90 MBM29F002T-12 MBM29F002B-12 MBM29FQ02T-90-X '3

29F400 flash

Abstract: 29f400 flash 29f400 TP-UART FR30 MB91101 0x9090
Contextual Info: 1 Application Note FR30 example interface to external Flash Memory Fujitsu Microelectronics Europe GmbH, Microcontroller Application Group History 13th Oct. 99 04th Jul. 00 MM MEN V1.0 V1.1 New Format, new updated version Updated Application 2 Warranty and Disclaimer