MB8502E064AB Search Results

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11221-1E MEMORY CMOS 2 M x 64 BITS HYPER PAGE MODE DRAM MODULE MB8502E064AB-60/-70 Buffered, 2 M × 64 BITS Hyper Page Mode DRAM Module, 5 V, 1-bank • DESCRIPTION The Fujitsu MB8502E064AB is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

Contextual Info: MMMmmmssssssssssssssssss MODULE Buffered, 2 M x 64 BITS Hyper Page Mode DRAM Module, 5 V, 1-bank • DESCRIPTION The Fujitsu MB8502E064AB is a fully decoded, CMOS Dynamic Random.Access Memory DRAM module consisting of eight M B8117805A devices. The MB8502E064AB is opti mi zed: for those applications requiring high

128M-BIT

Abstract: 256-MBIT 128-MBIT
Contextual Info: DRAM Modules 1 • DRAM Modules - Normal Voltage Versions (CMOS) Vcc= +5V+10%, Ta=0°C to +70~C Organization (Wxb) 1Mx32 Mounted Device X number <Package> Operating Standby Mode (CMOS level} 60(15] 70(20] 2684 2376 44 72Pin SIMM 60(15] 70(20] 2904 2424 44

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable