MB82DBR08163 Search Results
MB82DBR08163 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| MB82DBR08163A-70L |
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SRAM Chip, 128Mbit Mobile FCRAM 3.0V Core & 1.8V I/O, Burst Mode | Original |
MB82DBR08163 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11421-2E 128 Mbit Mobile FCRAMTM 3.0 V Core & 1.8 V I/O, Burst Mode MB82DBR08163-70A New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM) |
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NP05-11421-2E MB82DBR08163-70A 71pin MB82DBR08163 | |
MB82DBR08163A-70LContextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11423-1E 128 Mbit Mobile FCRAMTM 3.0 V Core & 1.8 V I/O, Burst Mode MB82DBR08163A-70L New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM) |
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NP05-11423-1E MB82DBR08163A-70L 71pin MB82DBR08163A MB82DBR08163A-70L | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11433-1E MEMORY Mobile FCRAMTM CMOS 128 M Bit 8 M wordx16 bit Mobile Phone Application Specific Memory MB82DBR08163A-70L • DESCRIPTION The FUJITSU MB82DBR08163A is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous |
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DS05-11433-1E MB82DBR08163A-70L MB82DBR08163A 16-bit F0601 | |
MB82DBR08163A-70LContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 128M Bit 8M word x 16 bit Mobile Phone Application Specific Memory MB82DBR08163A-70L CMOS 8,388,608-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode |
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MB82DBR08163A-70L 608-WORD MB82DBR08163A 16-bit MB82DBR08163A-70L | |
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Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11421-1E 128 Mbit Mobile FCRAMTM 3.0 V Core & 1.8 V I/O, Burst Mode MB82DBR08163-70/-70L New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM) |
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NP05-11421-1E MB82DBR08163-70/-70L MB82DBR08163 | |
FCRAMContextual Info: TN-45-14: CellularRAM Replacing Fujitsu 3V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 3V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and |
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TN-45-14: CellularR9e486 TN4514 09005aef8209e446/Source: 09005aef8209e486 FCRAM | |
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Contextual Info: TN-45-18: CellularRAM Replacing NEC Mobile Specified RAM Introduction Technical Note Using CellularRAM Memory to Replace NEC Mobile Specified RAM µPD46128512 Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM |
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TN-45-18: PD46128512) PD46128512, 09005aef821620d5/Source: 09005aef8213f7b7 tn4518 |