MB816 Search Results

MB8167A-70

Abstract: MB8167A
Contextual Info: FU JITSU MOS Memories • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A -7 0 NMOS 16,384-Bit Static Random Access Memory Description The Fujitsu MB8167A is a 16,384 words by 1-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS technol­ ogy. Separate Input/output pins are provided. A ll devices are fully

MX 0541

Abstract: DIP-20P-M01 MB8168 MB816 MB616 MB8168-55
Contextual Info: MB8168-55 MB8168-70 FUJITSU M ICRO ELECTRO NICS, INC. NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The F u jits u M B8168 is a 4096 w ord by 4-bit s ta tic random ac­ ce ss m em ory fa b rica te d using N -ch an n e l s ilic o n g a te M OS te ch no lo g y. The m em ory is fu lly

MB8167A

Contextual Info: Q u ic k G u id e T o P ro d u c ts in T h is S e c tio n 1 Device I MB8128-10 1 MB8128-15 9 MB8167A-55 | M B8167A-70 A c c e ss Tim e max Power Supply Volts Pow er Dissipation Packsgo Pago I 2K x 8 2K x 8 100 nS 150 nS +5 +5 550/110 mW 385/83 mW 24-pin

MB8167A

Contextual Info: M O S M e m o r ie s $ X f / ^ FUJITSU • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A -7 0 NMOS 16,384-Bit Static Random Access Memory Description The Fujitsu MB8167A is a f6,384 words by 1-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS technol­

MB8168

Contextual Info: F U JIT S U M IC R O E L E C T R O N IC S . INC. ft0816fr-55 MB8168-70 NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu M B8168 is a 4096 word by 4-bit sta tic random a c ­ c e s s m em ory fabricated using N -ch a n n e i s ilic o n gate M O S

MB8168-55

Abstract: MB8168 cte 70 MB8168-70
Contextual Info: FUJITSU MICROELECTRONICS 7fl F U JIT S U M IC R O E L E C T R O N IC S, ÔËJ BTMTTtE 000341b 7 T-46-23-08 MB8168-55 MB8168-70 INC. NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION T h e Fujitsu M B 8 1 6 8 is a 4096 w ord by 4-bit static random a c ­

mos 3021

Abstract: MB8107 MB81 MB8167A-55 MB8167A-70 MB8167A
Contextual Info: F U J IT S U MOS Memories • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A -7 0 NMOS 16,384-Bit Static Random Access Memory D e scriptio n The Fujitsu MB8167A is a 16,384 words by 1-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS technol­

MB316

Abstract: MB8168-55
Contextual Info: MB8168-55 MB8168-70 FUJITSU M IC R O E L E C T R O N IC S . INC. NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8168 is a 4096 word by 4-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS technology. The memory is fully

MB8167-70

Abstract: MB81C67-45 M5M2167S-70 MB8167-45 65767 2167L-10 2167L-70 F3567-55 HM65767K-2 HM65767M-2
Contextual Info: - 16 K m « Î1: £ ífiKÜBB *C x 4 TAAC max (ns) TCAC max (ns) TOE max (ns) nMOS ••/ f- > TOH min (ns) TOD max (ns) ^ S t a t i c ft TWP min (ns) TDS (ns) RAM (I 63 8 4 x 1 ) m tt TDH min (ns) TWD lin (ns) TWR max (ns) V D D or V C C (V) 2 0 P I N 2 1 6 7

MB8167A

Abstract: MB81C67-45
Contextual Info: FUJITSU MICROELECTRONICS 7fl DË| 3 7 4 ^ 2 00G3222 S | Dp Y¿- 2 Ï ' O F F U J IT S U MOS Mem ories MB81C67-45-W, MB81C67-55-W CMOS 16,384-Bit Static Random Access Memory D escrip tion The Fujitsu MB81C67 is a 16,384 word x 1-bit static random access memory fabricated with a C M O S silicon gate process. This

MB8167A

Abstract: B8167A-4S
Contextual Info: FUJITSU MIC RO EL E C T R ON I C S 7ö » Ê 1 3 7 M “ì7t,a DD03410 b I — — 3 7497 62 FUJIT SU M I C R O E L E C T R ON I C S - — y ' 7ÖC 0 34 10 F U J IT S U MOS Memories • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A - 7 0 NMOS 16,384-Bit Static Random Access Memory

MB81C67-45

Abstract: MB81C67 MB81C67-35 MB8167A
Contextual Info: January 1990 Edition 3.0 : = FUJITSU DATASHEET MB81C67-35/-45/-55 CMOS 16K-BIT HIGH-SPEED SRAM 16K Words x 1 Bit High-Speed CMOS Static Random Access Memory The Fujitsu M B81C67 is a 16,384 words x 1 bit static random access memory fabricated with a CMOS silicon gate process. All pins are TTL compatible and a single

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

PHILIPS DMOS FET

Contextual Info: Philips Components Data sheet status Preliminary specification BSS138 date of issue September 1990 N-channel enhancem ent m ode vertical D-M O S FET FEATURES PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance. PINNING - SOT223

MB81C67-35

Abstract: MB8167A mb81c87 MB81C67 tv suffix fujitsu 80 PINS
Contextual Info: January 1990 Edition 3.0 FUJITSU DATA SHEET MB81C67-35/-45/-55 CMOS 16K-BIT HIGH-SPEED SRAM 16K Words x 1 Bit High-Speed CMOS Static Random Access Memory The Fujitsu M B81C67 is a 16,384 words x 1 bit static random access memory fabricated with a C M OS silicon gate process. All pins are TTL compatible and a single

CA314DE

Abstract: 74ls154n SN72710N uln 2008 SN75450BN 1826-0138 SN74ALS00N MC889P SN72710L 9374PC
Contextual Info: INTEGRATED CIRCUIT CROSS REFERENCE 9 Integrated Circuits Replacement Part Cross Reference When selecting replacement parts for your HP products, you may notice that many manuals list only an HP part number for the part, even though it appears that this part is manufactured by one of the large semiconductor manufacturers. Service personnel often ask why only HP part numbers are

Contextual Info: FUJITSU MICROELECTRONICS 7ñ » e| 37^,:î7b2 DDD35MS b F U J IT S U M O S M e m o rie s M B 81C 68-45-W , M B 8 1 C 6 8 -5 5 -W CMOS 16,384-Bit Static Random Access Memory With Automatic Power Down D e s c rip tio n The Fujitsu M B81C68 Is a 4,096 word x 4-bit static random access

MB81C68

Abstract: MB81C68-45 MB61C68-45 MB81C68-35
Contextual Info: FUJITSU MICROELECTRONICS 7 f i ~ D e| 3 7 4 ^ 2 00G3230 4 1 T-46-23-08 FU JITSU MOS M em o ries M B 81C 68-35, M B 81C 68-45 16,384-Bit Static Random Access Memory with Automatic Power Down m Description The Fujitsu MB81C68 is a 4,096 word x 4-bit static random access

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors