MB811161622C Search Results

mb811161622c

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11120-1E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM 144-pin, 2 Clock, 1-bank, based on 1 M × 16 Bit SDRAMs with SPD, Low-power version

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

Contextual Info: MEMORY 1 R/Ix 84 BIT OUS DYNAMIC RAM SO»DIMM M 1S06 / • v r * * . I*-"I q o / “ £ 4/-67M00L/-84L/-67L/-100SA84S/-67S 144-pin, 2 Clock, 1-bank, based on 1 M x 16 Bit SDRAMs with SPD, Low-power version I DESCRIPTION The Fujitsu MB8501S064CE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

MB8508S064AE-100L

Abstract: MB8508S064AE
Contextual Info: SDRAM Modules 2 • Synchronous ORAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wx&) 2Mx72 Part Number Mounted Device Clock Access Access [Capacity) x Frequency CLK tank Time 1 Time 2 number max. max. (ns) max. (ns) «Package» (MHz) MB8502SQ72AG-1OQ

15j100

Contextual Info: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption

mb811161622c

Abstract: MB811161622
Contextual Info: July 1997 Revision 1.0 data sheet SOB1UL6414- 67/84/100 T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SOB1UL6414-(67/84/100)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.