MAY07 Search Results

Contextual Info: TH I S C D R AW I NG IS U N PU B LI SHED. COPYRIGHT - RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL PUBLICATION RIGHTS L OC RE V I S I O N S D I ST RESERVED. LTR DESCRIPTION FIRST ISSUE A1 DWN DATE APVD |£*MAY07 DC T dB NOV09 KK AEG REVISED PER ECO-09-026495

Contextual Info: THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED FOR PUBLICATION A LL RIGHTS BY TYCO ELECTRONICS CORPORATION. - , - LOC R ESERVED. REVISIONS D IST D LTR D E SC RIPTIO N A DATE 31 MAY07 RELEASED DWN APVD HH WK :0. 15 B + 0.1 5 + 0.1 5 CIRCUIT NO . 1 SIDE

Contextual Info: REVISIONS REV 58.80 [2 .3 1 5 ] o I"- LED 2 LED 1 ^ 14 .3 [.5 6 3 ]* 3 = 42 .90 [1 .6 8 9 ] left RIGHT 20.70 [.8 1 5 ] FEB22,2012 L.CHAN B PROPOSAL DRAWING M AR08.2012 L.CHAN C PROPOSAL DRAWING MAY07.2013 L.CHAN ^ PIN NUMBERS SHOW FOR REFERENCE ONLY, IT DOES NOT

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - L0C , - ALL RIGHTS RESERVED. DIST R E V IS IO N S DW p LTR DESCRIPTION A 94.1 4 + 0.9 5 D DATE DWN OH WK 0 4 MAY07 RELEASED APVD 1 6 .5 1 + 0 .2 5 D

Contextual Info: 4 TH IS D R A W IN G IS 2 U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY ^C O ELECTRONICS P U B LIC A TIO N R IG H TS REVISIONS RESERVED. G CORPORATION. LT R D E S C R IP T IO N N2 REV D PER ECR DATE 0 7-0 3 0 70 8 APVD JR 27DEC07 STAMP 6S AMP 2 2 - 1 8 * , APPRDX

Contextual Info: FTS512K8L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II

Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

tpc8118

Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ

DA47

Abstract: DA48 6A05
Contextual Info: 6A05 THRU 6A10 Standard Rectifier YENYO Voltage Range 50 to 1000 V Current 6.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic R-6

Contextual Info: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP VCC Current

capacitor 10uF 50V

Abstract: SMD resistors poscap 330uf 6.3v capacitor 330uF 50V DO3316P-153 Tantalum Capacitor 25v SANYO POSCAP 330uF 10UF tantalum 6TPB330M
Contextual Info: STMicroelectronics: DC-DC EVAL5973D QTY 1 1 1 1 1 1 1 Reference C1 C2 C3 C4 R1 R2 R3 Mfg P/n C3225X5R1E106M POSCAP 6TPB330M C1206C221J5GAC C1206C223K5RAC L1 Part Description 10uF 25V ceramic capacitor 330uF 6.3V tantalum capacitor 220pF 5% 50V ceramic capacitor

IC 74115

Abstract: free transistor and ic equivalent data MARKING CODE 42 free transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: MOSFET TRANSISTOR SMD MARKING A1 transistor smd code marking KEY catalog mosfet Transistor smd SOT426 MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK125-50L DESCRIPTION Monolithic logic level protected power MOSFET using TOPFET2 technology assembled in a 5 pin surface mounting plastic package. APPLICATIONS General purpose switch for

smd schottky diode sot363

Abstract: smd code 22 SOT363 marking E1 sot363 SMD DIODE MARKING CODE 101 diode SMD MARKING CODE S sot363 marking code cd PHILIPS DIODE smd marking A1 A SOT363 marking CODE E1 smd diode E1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 1PS88SB82 Schottky barrier triple diode Product specification Supersedes data of 2001 Feb 16 2003 Apr 11 Philips Semiconductors Product specification Schottky barrier triple diode 1PS88SB82 FEATURES

Contextual Info: 1 T H IR D NOTES: I . M A T E R I A L S AND F I N I S H E S : BO D Y - B R A S S , G O L D P L A T I N G CONTACT - B E R Y L L I U M C OPPER, GOLD P L A T IN G INSULATOR - PTFE, NATURAL ELECTRICAL: A. I M P E D A N C E : 5 0 OHM B. D I E L E C T R I C W I T H S T A N D I N G V O L T AG E : 7 5 0 VRMS,

Contextual Info: 1N6267. 1N6303A / 1.5KE6V8. 1.5KE440A 1N6267C.1N6303CA / 1.5KE6V8C.1.5KE440CA 1500W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes DO201-AE Plastic Dimensions in mm. Peak Pulse Power Rating At 1ms. Exp. 1500 W Reverse

Contextual Info: P4KE 400W Unidirectional Transient Voltage Suppressor Diodes DO-41 Plastic Dimensions in mm. Peak Pulse Power Rating At 1ms. Exp. 400 W R • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

PYX28C64

Abstract: eeprom 1519B P5C164 EEPROM101
Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . D 6.00 CIRCUIT DIAGRAM 4 .1 0 C 1 .50 [.059] r= i 1.00 [.039] 2.20

BBY65-02V

Abstract: BBY65 SC79
Contextual Info: BBY65. Silicon Tuning Diode
High Q hyperabrupt tuning diode
Very low capacitance spread
Designed for low tuning voltage operation for VCO's in mobile communications equipment
For low frequency control elements such as TCXOS and VCXOS
High capacitance ratio and good C-V linearity

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation

free transistor and ic equivalent data

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

smd transistor marking C14

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 PINNING FEATURES