M513
Abstract: MASWSS0040 MASWSS0040SMB MASWSS0040TR MASWSS0040TR-3000
Text: MASWSS0040 GaAs DPDT Diversity Switch 0.5 - 3.0 GHz Features • • • • Rev. V5 Functional Schematic Low Insertion Loss 0.7 dB at 2.4 GHz Low Cost 3 mm 12-Lead PQFN Package Ideal for WLAN IEEE 802.11b 0.5 micron GaAs PHEMT Process Description M/A-COM’s MASWSS0040 is a GaAs pHEMT
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MASWSS0040
12-Lead
MASWSS0040
11b/g
M513
MASWSS0040SMB
MASWSS0040TR
MASWSS0040TR-3000
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nor gate 7433
Abstract: 225081 295-03 MASWSS0040TR MASWSS0040TR-3000 M513 MASWSS0040 MASWSS0040SMB 324300 16533-2
Text: GaAs DPDT Diversity Switch 0.5 - 3.0 GHz MASWSS0040 V3 Features • • • • Functional Schematic Low Insertion Loss 0.7 dB at 2.4 GHz Low Cost 3 mm 12-Lead PQFN Package Ideal for WLAN IEEE 802.11b 0.5 micron GaAs PHEMT Process Description M/A-COM’s MASWSS0040 is a GaAs PHEMT
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Original
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MASWSS0040
12-Lead
MASWSS0040
11b/g
syst2676
nor gate 7433
225081
295-03
MASWSS0040TR
MASWSS0040TR-3000
M513
MASWSS0040SMB
324300
16533-2
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PDF
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nas 1748
Abstract: 32-1037 1411-33 MASWSS0040 MASWSS0040SMB MASWSS0040TR MASWSS0040TR-3000 189287
Text: MASWSS0040 GaAs DP2T Diversity Switch 0.5 - 3.0 GHz Features • • • • V2 MASWSS0040 Functional Schematic Low Insertion Loss 0.7 dB at 2.4 GHz Low Cost Miniature 3mm FQFP 12 Lead Package Ideal for WLAN IEEE 802.11b 0.5 micron GaAs pHEMT Process Description
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Original
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MASWSS0040
MASWSS0040
nas 1748
32-1037
1411-33
MASWSS0040SMB
MASWSS0040TR
MASWSS0040TR-3000
189287
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PDF
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Untitled
Abstract: No abstract text available
Text: MASWSS0040 GaAs DPDT Diversity Switch 0.5 - 3.0 GHz Features • • • • M/A-COM Products Rev. V4 Functional Schematic Low Insertion Loss 0.7 dB at 2.4 GHz Low Cost 3 mm 12-Lead PQFN Package Ideal for WLAN IEEE 802.11b 0.5 micron GaAs PHEMT Process Description
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Original
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MASWSS0040
12-Lead
MASWSS0040
11b/g
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PDF
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30763
Abstract: No abstract text available
Text: MASWSS0040 GaAs DP2T Diversity Switch 0.5 - 3.0 GHz Features • • • • V2 MASWSS0040 Functional Schematic Low Insertion Loss 0.7 dB at 2.4 GHz Low Cost Miniature 3mm FQFP 12 Lead Package Ideal for WLAN IEEE 802.11b 0.5 micron GaAs pHEMT Process Description
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Original
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MASWSS0040
MASWSS0040
30763
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PDF
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OC 39
Abstract: No abstract text available
Text: The MASWSS0040 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability. Ordering Information Part Number MASWSS0040TR Package 7 inch, 1000 piece reel 1 MASWSS0040TR-3000 13 inch, 3000 piece reel
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MASWSS0040
12-lead
MASWSS0040
OC 39
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