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Abstract: No abstract text available
Text: MASW6020G GaAs SPST Switch DC - 6.0 GHz Rev. V5 Features • Pad Layout Low Insertion Loss, 0.6 dB Typical @ 1.0 GHz Fast Switching Speed, 10 ns Typical Ultra Low DC Power Consumption Integral Static Protection
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MASW6020G
MASW6020G
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Untitled
Abstract: No abstract text available
Text: MASW6020G GaAs SPST Switch DC - 6.0 GHz M/A-COM Products Rev. V4 Features • • • • • • • Pad Layout Low Insertion Loss, 0.6 dB Typical @ 1.0 GHz Fast Switching Speed, 10 ns Typical Ultra Low DC Power Consumption Integral Static Protection 100% Matte Tin Plating over Copper
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MASW6020G
MASW6020G
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MASW6020G
Abstract: No abstract text available
Text: MASW6020G GaAs SPST Switch DC - 6.0 GHz Rev. V4 Features • • • • • • • Pad Layout Low Insertion Loss, 0.6 dB Typical @ 1.0 GHz Fast Switching Speed, 10 ns Typical Ultra Low DC Power Consumption Integral Static Protection 100% Matte Tin Plating over Copper
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MASW6020G
MASW6020G
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MASW6020G
Abstract: No abstract text available
Text: RoHS Compliant GaAs SPST Switch DC - 6.0 GHz MASW6020G V3 Features • • • • • • • Pad Layout Low Insertion Loss, 0.6 dB Typical @ 1.0 GHz Fast Switching Speed, 10 ns Typical Ultra Low DC Power Consumption Integral Static Protection 100% Matte Tin Plating over Copper
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MASW6020G
MASW6020G
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MASW6020G
Abstract: SW-210
Text: GaAs SPST Switch DC-6 GHz MASW6020G V 2.00 Features • Low Insertion Loss,0.6 dB Typical @ 1 GHz • Fast Switching Speed,10 ns Typical • Ultra Low DC Power Consumption • Integral Static Protection Guaranteed Specifications* @25°C* Frequency Range
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MASW6020G
MASW6020G
SW-210
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Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
Abstract: SW-210 mmic A MASW6010G MASW6020G SW-200
Text: Techniques to Achieve High Isolation with GaAs MMIC Switch Chips Mounting Techniques 1. Mount the base of the chip directly on the ground plane i.e. the metal floor of the package and use short connections from the ground pads of the MMIC to the ground plane.
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MASW6010G
SW-200
MASW6020G
SW-210.
Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
SW-210
mmic A
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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PH1819-60
Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies
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MAAM-008863
Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America
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40W267
MAAM-008863
MAMU-009156
transistor MY52
200W MOSFET POWER AMP
transistor MY51
GPS Antenna AT65
MA4ST350
MADR-007690-DR0002
a74 sot-89
SM4T mixer
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Untitled
Abstract: No abstract text available
Text: w a n A M P com pany GaAs SPST Switch DC-6 GHz MASW6020G V 2.00 Features 8 A ALT RF + • Low Insertion Loss, 0 .6 dB Typical @ 1 GHz • Fast Switching Speed, 10 ns Typical • Ultra Low IX, Power Consumption • Integral Static Protection -TERM + Guaranteed Specifications* @25°C*
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MASW6020G
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Untitled
Abstract: No abstract text available
Text: GaAs SPST Switch D C -6 GHz MASW6020G • Low Insertion Loss, 0.6 dB Typical @ 1 G Hz B A ALT RF 4. 4- 4- • Fast Switching Speed, 10 ns Typical • Ultra Low DC Power Consumption • Integral Static Protection Guaranteed Specifications* @25°C* Frequency Range
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MASW6020G
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M517
Abstract: No abstract text available
Text: MMIC Based Components Application Notes Application Page Note Title M515 Techniques to Achieve High Isolation 1-214 With GaAs MMIC Switch C h ip s. 1-215 MASW6020 Configuration Guide.
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MASW6020
MASW6010
SW-239
SW-419
AT-210
AT-23.
AT-230
M517
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Abstract: No abstract text available
Text: AfaH Application Note MASW6020* Configuration Guide M516 Terminated T Configuration The T erm inated (T) C onfiguration is achieved by sw itching betw een RF1 and RF2 w ith GND1 and.T E R M grounded. ALT R F and G N D 2 rem ain open in th is configuration.
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MASW6020*
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Untitled
Abstract: No abstract text available
Text: « lü H P a m v u f ly GaAs SPST Switch DC-6 GHz MASW6020G Features V 2.00 B A ALT RF • Low Insertion Loss,0.6 dB Typical @ 1 GHz • Fast Switching Speed, 10 ns Typical • Ultra Low DC Power Consumption • Integral Static Protection + + + RF1- •RF2
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