Untitled
Abstract: No abstract text available
Text: MX23L1654 16M-BIT Low Voltage, Serial MASK ROM with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L1654 is a 16Mbit 2M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 16Mbit of Mask ROM 3.0 to 3.6V Single Supply Voltage
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MX23L1654
16M-BIT
50MHz
16Mbit
MX23L1654
16Mbit
16-PIN
MX23Lacronix
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MX23L1
Abstract: 8096 microcontroller features MX23L1654MC-20G MX23L1654 MX23L1654MC-20 MX23L1654MI-20G ST10
Text: MX23L1654 16M-BIT Low Voltage, Serial MASK ROM with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L1654 is a 16Mbit 2M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 16Mbit of Mask ROM 2.7 to 3.6V Single Supply Voltage
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MX23L1654
16M-BIT
50MHz
MX23L1654
16Mbit
16Mbit
16-PIN
JUN/08/2005
MX23L1
8096 microcontroller features
MX23L1654MC-20G
MX23L1654MC-20
MX23L1654MI-20G
ST10
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Untitled
Abstract: No abstract text available
Text: Preliminary PRELIMINARY CMOS MASK ROM KM23V16000C E T 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM23V16000C(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology,
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KM23V16000C
16M-Bit
/1Mx16)
44-TSOP2.
100pF
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p42c
Abstract: C10535E M1207
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32020A 32M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT Description The µPD23C32020A is a 33,554,432 bits 2,097,152 words by 16 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.
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PD23C32020A
32M-BIT
16-BIT
PD23C32020A
42-pin
PD23C32020ACZ-×
p42c
C10535E
M1207
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KM23C32000CG-12
Abstract: KM23C32000CG-15 km23c32000cg-10
Text: KM23C32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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KM23C32000CG
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-SOP-600
KM23C32000CG
KM23C32000CG-12
KM23C32000CG-15
km23c32000cg-10
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MB98A5100-25
Abstract: mb832000 A0-A21
Text: February 1990 Edition 2 .0 FUJITSU DATA S H E E T MB98A5090-25/5100-25/5110-25 MASK ROM MEMORY CARD MASK PROGRAMMABLE READ ONLY MEMORY CARD 512K/1M/2M-BYTE The Fujitsu MB98A5090/5100/5110 are Mask Programmable Read Only Memory Mask ROM cards capable of storing and retrieving large amounts of data Each Mask ROM card
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MB98A5090-25/5100-25/5110-25
512K/1M/2M-BYTE
MB98A5090/5100/5110
MB834200A
MB832000
68-pin
16-bit
A1-A21)
MB98A5100-25
A0-A21
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Untitled
Abstract: No abstract text available
Text: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is
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KM23V32005BG
32M-Bit
/2Mx16)
304x8
1S2x16
KM23V32005BG
152x16
KM23V
5BG-10
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Untitled
Abstract: No abstract text available
Text: KM23G2000 G CMOS MASK ROM 2M-BH (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •
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KM23G2000
144x8
150ns
32-pln
32-pin
KM23C2000
KM23C2000G-20
KM23C2000G-25
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KM23C2000
Abstract: No abstract text available
Text: KM23C2000 CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •
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KM23C2000
150ns
32-pin
KM23C2000
144x8
operati50
23C2000
43Electronics
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23C2001
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • VTbHlHB 0GlbT70 T^V «SIIGK KM23C2001A G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001A is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using
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0GlbT70
KM23C2001A
144x8
100ns
32-pin,
KM23C2001A)
KM23C2001AG)
23C2001
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 ODlbTbb Sbb KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using
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KM23C2001
144x8
150ns
32-pin,
525mil,
KM23C200KG)
KM23C2001)
KM23C2001G)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 OOlb'iSñ 4TT KM23C2000 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using
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KM23C2000
144x8
150ns
32-pin
KM23C200CKG)
KM23C2000)
KM23C2000G)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.
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KM23C32000
32M-BH
KM23C32000
150ns
100/iA
42-pin,
KM23C32000)
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Untitled
Abstract: No abstract text available
Text: KM23C16101C CMOS MASK ROM 16M-Bit 2Mx8 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • • • • The KM23C16101C is a fully static mask programmable ROM organized 2,097,152x3 bit. It is fabricated uning silicon gate CMOS process technology.
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KM23C16101C
16M-Bit
100ns
36-DIP-600
KM23C16101C
152x3
100pF
KM23C16101C-10
KM23C16101C-12
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Untitled
Abstract: No abstract text available
Text: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.
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KM23C32000A
32M-Bit
KM23C32000A
152x16bit
42-DIP
16bit
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mask rom
Abstract: mask rom 4M
Text: MASK ROM 1. OUTLINE The MASK ROM IC MEMORY CARD series is made up of Mask ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. 2. VARIATION Part Number MRC128IEC0 MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0
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MRC128IEC0
MRC256IEC0
MRC512IEC0
MRC100IEC0
MRC200IEC0
MRC400IEC0
A0-A21
128KB
256KB
mask rom
mask rom 4M
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Untitled
Abstract: No abstract text available
Text: KM23C32005 CMOS MASK ROM 32M-BH 2M x 16 CMOS MASK ROM The KM23C32005 is a fu lly static mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technology. T his device is in clu d e s PAGE read m ode fu n ctio n ,
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KM23C32005
32M-BH
152x16
150ns
100mA
50/iA
42-pin,
KM23C32005
KM23C32QQ5
KMZ3C32005
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process te ch n o lc
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KM23C2001
150ns
32-pin,
KM23C2001-15
KM23C2001-25
KM23C2001-20
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23C2001
Abstract: 50-8S-G
Text: CMOS MASK ROM KM23C2001 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •
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KM23C2001
200ns
32-pin,
KM23C2001-20
KM23C2001-25
23C2001
50-8S-G
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sharp mask rom
Abstract: No abstract text available
Text: LH53C16600 16M Mask ROM Ref No.: NP 188C Issue Date: September 1997 High-Speed 16M-bit Mask-Programmable ROM with Page Mode Operation LH53C16600 • ■ Description The LH53C16600D/N User’s No. : LH-5C76XX is a CMOS 16M-bit mask-programmable ROM organized as 2 097 152 X 8
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LH53C16600
LH53C16600D/N
LH-5C76XX)
16M-bit
42-pin
sharp mask rom
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Untitled
Abstract: No abstract text available
Text: / P R E LIM IN A R Y >/ KM23C32000 : m o s MASK ROM 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit It is fabricated using s ilic o n gate CMOS process te ch n o lg y
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KM23C32000
32M-BH
150ns
KM23C32000
KM23C32000)
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23C32000CG 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) 1Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.)
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KM23C32000CG
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-SQP-600
KM23C32000CG
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS MASK ROM KM23C32000C 32M-Bit 2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 12,097,152x16 bit organization 1 Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.) Standby : 50|^A(Max.)
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KM23C32000C
32M-Bit
2Mx16)
152x16
100ns
42-DIP-600
KM23C32000C
KM23C32000C-12
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Untitled
Abstract: No abstract text available
Text: KM23C32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16{word mode) « Fast access time : 1Q0ns(Max.) • Supply voltage : single +SV • Current consumption
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KM23C32000CG
32M-Bit
/2Mx16)
304x8
152x16
KM23C32000CG:
44-30P-500
KM23C32000CG
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