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    MASK ROM 2M Search Results

    MASK ROM 2M Datasheets Context Search

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    MB98A5100-25

    Abstract: mb832000 A0-A21
    Contextual Info: February 1990 Edition 2 .0 FUJITSU DATA S H E E T MB98A5090-25/5100-25/5110-25 MASK ROM MEMORY CARD MASK PROGRAMMABLE READ ONLY MEMORY CARD 512K/1M/2M-BYTE The Fujitsu MB98A5090/5100/5110 are Mask Programmable Read Only Memory Mask ROM cards capable of storing and retrieving large amounts of data Each Mask ROM card


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    MB98A5090-25/5100-25/5110-25 512K/1M/2M-BYTE MB98A5090/5100/5110 MB834200A MB832000 68-pin 16-bit A1-A21) MB98A5100-25 A0-A21 PDF

    Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is


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    KM23V32005BG 32M-Bit /2Mx16) 304x8 1S2x16 KM23V32005BG 152x16 KM23V 5BG-10 PDF

    Contextual Info: KM23G2000 G CMOS MASK ROM 2M-BH (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •


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    KM23G2000 144x8 150ns 32-pln 32-pin KM23C2000 KM23C2000G-20 KM23C2000G-25 PDF

    KM23C2000

    Contextual Info: KM23C2000 CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •


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    KM23C2000 150ns 32-pin KM23C2000 144x8 operati50 23C2000 43Electronics PDF

    23C2001

    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • VTbHlHB 0GlbT70 T^V «SIIGK KM23C2001A G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001A is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using


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    0GlbT70 KM23C2001A 144x8 100ns 32-pin, KM23C2001A) KM23C2001AG) 23C2001 PDF

    Contextual Info: MX23L1654 16M-BIT Low Voltage, Serial MASK ROM with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L1654 is a 16Mbit 2M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 16Mbit of Mask ROM 3.0 to 3.6V Single Supply Voltage


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    MX23L1654 16M-BIT 50MHz 16Mbit MX23L1654 16Mbit 16-PIN MX23Lacronix PDF

    MX23L1

    Abstract: 8096 microcontroller features MX23L1654MC-20G MX23L1654 MX23L1654MC-20 MX23L1654MI-20G ST10
    Contextual Info: MX23L1654 16M-BIT Low Voltage, Serial MASK ROM with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L1654 is a 16Mbit 2M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 16Mbit of Mask ROM 2.7 to 3.6V Single Supply Voltage


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    MX23L1654 16M-BIT 50MHz MX23L1654 16Mbit 16Mbit 16-PIN JUN/08/2005 MX23L1 8096 microcontroller features MX23L1654MC-20G MX23L1654MC-20 MX23L1654MI-20G ST10 PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 ODlbTbb Sbb KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using


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    KM23C2001 144x8 150ns 32-pin, 525mil, KM23C200KG) KM23C2001) KM23C2001G) PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 OOlb'iSñ 4TT KM23C2000 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using


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    KM23C2000 144x8 150ns 32-pin KM23C200CKG) KM23C2000) KM23C2000G) PDF

    Contextual Info: PRELIMINARY : m o s MASK ROM KM23C32000 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000 Is a fu lly s tatic mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technolgy.


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    KM23C32000 32M-BH KM23C32000 150ns 100/iA 42-pin, KM23C32000) PDF

    Contextual Info: KM23C16101C CMOS MASK ROM 16M-Bit 2Mx8 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • • • • The KM23C16101C is a fully static mask programmable ROM organized 2,097,152x3 bit. It is fabricated uning silicon gate CMOS process technology.


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    KM23C16101C 16M-Bit 100ns 36-DIP-600 KM23C16101C 152x3 100pF KM23C16101C-10 KM23C16101C-12 PDF

    Contextual Info: Preliminary PRELIMINARY CMOS MASK ROM KM23V16000C E T 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM23V16000C(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology,


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    KM23V16000C 16M-Bit /1Mx16) 44-TSOP2. 100pF PDF

    mb838200

    Abstract: A5121
    Contextual Info: August 1992 Edition 1.0A FUJITSU DATA SHEET MB98A5101X-, 5111x-, 5121x-, 5131x-, and 5141x-25 Mask ROM Memory Card IM-. 2M-. 4M-. 8M-. and 16M-BYTE The Fujitsu MB98A5101x, MB98A5111x, MB98A5121x, MB98A5131x and MB98A5141x are Mask Programmable Read Only Memory Mask ROM cards


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    MB98A5101X-, 5111x-, 5121x-, 5131x-, 5141x-25 16M-BYTE MB98A5101x, MB98A5111x, MB98A5121x, MB98A5131x mb838200 A5121 PDF

    Contextual Info: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.


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    KM23C32000A 32M-Bit KM23C32000A 152x16bit 42-DIP 16bit PDF

    Contextual Info: KM23C32005 CMOS MASK ROM 32M-BH 2M x 16 CMOS MASK ROM The KM23C32005 is a fu lly static mask programmable ROM organized 2,097,152 x 16 bit. It is fabricated using s ilic o n gate CMOS process technology. T his device is in clu d e s PAGE read m ode fu n ctio n ,


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    KM23C32005 32M-BH 152x16 150ns 100mA 50/iA 42-pin, KM23C32005 KM23C32QQ5 KMZ3C32005 PDF

    p42c

    Abstract: C10535E M1207
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32020A 32M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT Description The µPD23C32020A is a 33,554,432 bits 2,097,152 words by 16 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.


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    PD23C32020A 32M-BIT 16-BIT PD23C32020A 42-pin PD23C32020ACZ-× p42c C10535E M1207 PDF

    Contextual Info: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process te ch n o lc


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    KM23C2001 150ns 32-pin, KM23C2001-15 KM23C2001-25 KM23C2001-20 PDF

    23C2001

    Abstract: 50-8S-G
    Contextual Info: CMOS MASK ROM KM23C2001 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •


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    KM23C2001 200ns 32-pin, KM23C2001-20 KM23C2001-25 23C2001 50-8S-G PDF

    sharp mask rom

    Contextual Info: LH53C16600 16M Mask ROM Ref No.: NP 188C Issue Date: September 1997 High-Speed 16M-bit Mask-Programmable ROM with Page Mode Operation LH53C16600 • ■ Description The LH53C16600D/N User’s No. : LH-5C76XX is a CMOS 16M-bit mask-programmable ROM organized as 2 097 152 X 8


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    LH53C16600 LH53C16600D/N LH-5C76XX) 16M-bit 42-pin sharp mask rom PDF

    Contextual Info: / P R E LIM IN A R Y >/ KM23C32000 : m o s MASK ROM 32M-BH 2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization The KM23C32000 is a fully static mask programmable ROM organized 2,097,152 x 16 bit It is fabricated using s ilic o n gate CMOS process te ch n o lg y


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    KM23C32000 32M-BH 150ns KM23C32000 KM23C32000) PDF

    Contextual Info: CMOS MASK ROM KM23C32000CG 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) 1Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.)


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    KM23C32000CG 32M-Bit /2Mx16) 304x8 152x16 100ns 44-SQP-600 KM23C32000CG PDF

    Contextual Info: Preliminary CMOS MASK ROM KM23C32000C 32M-Bit 2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 12,097,152x16 bit organization 1 Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.) Standby : 50|^A(Max.)


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    KM23C32000C 32M-Bit 2Mx16) 152x16 100ns 42-DIP-600 KM23C32000C KM23C32000C-12 PDF

    Contextual Info: KM23C32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16{word mode) « Fast access time : 1Q0ns(Max.) • Supply voltage : single +SV • Current consumption


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    KM23C32000CG 32M-Bit /2Mx16) 304x8 152x16 KM23C32000CG: 44-30P-500 KM23C32000CG PDF

    KM23C32000CG-12

    Abstract: KM23C32000CG-15 km23c32000cg-10
    Contextual Info: KM23C32000CG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


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    KM23C32000CG 32M-Bit /2Mx16) 304x8 152x16 100ns 44-SOP-600 KM23C32000CG KM23C32000CG-12 KM23C32000CG-15 km23c32000cg-10 PDF