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    MARKING WHS SOT23 Search Results

    MARKING WHS SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING WHS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR108

    Abstract: EHA07184
    Text: BCR108 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR108 VPS05161 EHA07184 Nov-29-2001 BCR108 EHA07184

    BCR108

    Abstract: No abstract text available
    Text: BCR108 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR108 VPS05161 EHA07184 Jul-16-2001 BCR108

    c2253

    Abstract: Q62702-C2253
    Text: BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 108 WHs 1=B Q62702-C2253 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2253 OT-23 Nov-26-1996 c2253 Q62702-C2253

    Untitled

    Abstract: No abstract text available
    Text: BCR 108 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 108 WHs Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    marking WHS sot23

    Abstract: transistor marking code whs
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. BCR108/F/L3 BCR108T/W BCR108S EHA07174 EHA07184 BCR108 BCR108F BCR108L3 BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1

    BCR108

    Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10

    marking WHs

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 BCR108S marking WHs

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    Untitled

    Abstract: No abstract text available
    Text: SN74LV1T86 www.ti.com SCLS742 – NOVMEBER 2013 Single Power Supply 2-INPUT EXCLUSIVE-OR GATE CMOS Logic Level Shifter Check for Samples: SN74LV1T86 FEATURES DESCRIPTION • SN74LV1T86 is Low Voltage CMOS gate logic and operates in wider voltage range for portable


    Original     		PDF SN74LV1T86 SCLS742 SN74LV1T86

    Untitled

    Abstract: No abstract text available
    Text: SN74LV1T86 www.ti.com SCLS742 – NOVMEBER 2013 Single Power Supply 2-INPUT EXCLUSIVE-OR GATE CMOS Logic Level Shifter Check for Samples: SN74LV1T86 FEATURES DESCRIPTION • SN74LV1T86 is Low Voltage CMOS gate logic and operates in wider voltage range for portable


    Original     		PDF SN74LV1T86 SCLS742 SN74LV1T86

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software SN74LV1T86 SCLS742A – NOVMEBER 2013 – REVISED FEBRUARY 2014 SN74LV1T86 Single Power Supply 2-INput Exclusive-OR Gate CMOS Logic Level Shifter 1 Features 2 Applications


    Original     		PDF SN74LV1T86 SCLS742A SN74LV1T86

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software SN74LV1T86 SCLS742A – NOVMEBER 2013 – REVISED FEBRUARY 2014 SN74LV1T86 Single Power Supply 2-INput Exclusive-OR Gate CMOS Logic Level Shifter 1 Features 2 Applications


    Original     		PDF SN74LV1T86 SCLS742A SN74LV1T86

    2N2907AUE1

    Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
    Text: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/686 2N2907AUE1 MIL-PRF-19500. OT-23 O-236) 2N2907AUE1 award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15

    Q62702C2253

    Abstract: transistor bI 240 108 Marking Q62702-C2253
    Text: SIEMENS BCR 108 NPN Silicon Digital Transistor 1Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2ki2, R2=47kii Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package O II CO Marking Ordering Code LU II CVJ Type


    OCR Scan     		PDF 47kii) Q62702-C2253 OT-23 Q62702C2253 transistor bI 240 108 Marking Q62702-C2253

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2253 OT-23 0120b7fl 235b05

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN