BCR108 Search Results

BCR108 Price and Stock

Filter by Manufacturer


Infineon Technologies AG BCR108E6327HTSA1 TRANS PREBIAS NPN 50V SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR108E6327HTSA1	Digi-Reel	74,999		1	1 $0.23 10 $0.141 100 $0.23 1000 $0.05646 10000 $0.05646	Buy Now
	BCR108E6327HTSA1	Cut Tape	74,999		1	1 $0.23 10 $0.141 100 $0.23 1000 $0.05646 10000 $0.05646	Buy Now
	BCR108E6327HTSA1	Reel	42,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.04677	Buy Now
Avnet Americas	BCR108E6327HTSA1	Reel		4 Weeks	39,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	BCR108E6327HTSA1		66,577			1 $0.19 10 $0.123 100 $0.055 1000 $0.049 10000 $0.034	Buy Now
Verical	BCR108E6327HTSA1		102,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0338	Buy Now
Arrow Electronics	BCR108E6327HTSA1		102,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0335	Buy Now

Newark	BCR108E6327HTSA1	Cut Tape	44,193		1	1 $0.166 10 $0.111 100 $0.074 1000 $0.05 10000 $0.05	Buy Now
	BCR108E6327HTSA1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.038	Buy Now
EBV Elektronik	BCR108E6327HTSA1			5 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	BCR108E6327HTSA1		105,001			1 - 10 - 100 - 1000 $0.078 10000 $0.06	Buy Now
Infineon Technologies AG BCR-108-B6327 TRANS PREBIAS NPN 50V SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR-108-B6327	Reel			30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Electro-Films BCR1080AFMAHWS BCR 1% +/-250PPM WS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR1080AFMAHWS	Tray			250	1 - 10 - 100 - 1000 $5.28616 10000 $5.28616	Buy Now
Infineon Technologies AG BCR-108T-E6327 TRANS PREBIAS NPN 50V 0.1A SC75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR-108T-E6327	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BCR-108L3-E6327 TRANS PREBIAS NPN 50V TSLP-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR-108L3-E6327	Reel			30,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more BCR108 price and stock on Findchips.com

BCR108 Datasheets (78)

Part	Manufacturer	Description	Datasheet Type	PDF
BCR108	Infineon Technologies	Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V	Original	PDF
BCR108	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23	Original	PDF
BCR108	Infineon Technologies	R1=2.2 k ? R2=47k ?	Original	PDF
BCR108	Infineon Technologies	Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R₁ (typ): 2.2 kOhm; R₂: 47.0 k?; h_FE (min): 70.0; V_{i (on)} (min): 0.5 2mA / 0.3V;	Original	PDF
BCR108	Siemens	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit	Original	PDF
BCR108	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BCR108	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BCR108	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BCR108B6327	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF
BCR108B6327	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R	Original	PDF
BCR 108 B6327	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF
BCR108E6327	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF
BCR108E6327	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R	Original	PDF
BCR108E6327	Infineon Technologies	Digital Transistors - R1=2.2 kOhm, R2=47kOhm	Original	PDF

BCR108E6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 0.2W SOT23-3	Original	PDF
BCR108E6359	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R	Original	PDF
BCR108E6433	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF
BCR 108E6433	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R	Original	PDF
BCR108E6433	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3 pin SOT-23 T/R	Original	PDF
BCR108E6433HTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3	Original	PDF

BCR108 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BCR108W Abstract: VSO05561 Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	PDF	BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561
BCR108W Abstract: VSO05561 Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	PDF	BCR108W VSO05561 EHA07184 OT323 Jul-16-2001 BCR108W VSO05561
BCR108 Abstract: BCR108F BCR108L3 BCR108S SEMH10 Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	PDF	BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10
BCR108 Abstract: BCR108F BCR108S BCR108W BCW66 bcr1 Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	PDF	BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1
marking WHs Abstract: No abstract text available Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package	Original	PDF	BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174 BCR108S marking WHs
BCR108S Abstract: VPS05604 Text: BCR108S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604	Original	PDF	BCR108S VPS05604 EHA07174 OT363 Nov-29-2001 BCR108S VPS05604
marking WHS sot23 Abstract: transistor marking code whs Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3	Original	PDF	BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs
BCR108 Abstract: EHA07184 Text: BCR108 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23	Original	PDF	BCR108 VPS05161 EHA07184 Nov-29-2001 BCR108 EHA07184
BCR108T Abstract: SC75 Text: BCR108T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75	Original	PDF	BCR108T VPS05996 EHA07184 Jul-16-2001 BCR108T SC75
Untitled Abstract: No abstract text available Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	PDF	BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F
BCR108S Abstract: VPS05604 Text: BCR108S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=2.2k, R 2=47k) 2 3 1 VPS05604	Original	PDF	BCR108S VPS05604 EHA07174 OT363 Jul-12-2001 BCR108S VPS05604
BCR108 Abstract: BCR108F BCR108L3 BCR108S SEMH10 Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	PDF	BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10
Untitled Abstract: No abstract text available Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package	Original	PDF	BCR108. BCR108S: BCR108 BCR108W BCR108S EHA07184 EHA07174
BCR108 Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see	Original	PDF	BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W

BCR108 Abstract: No abstract text available Text: BCR108 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR108 WHs Pin Configuration 1=B 2=E Package 3=C SOT23	Original	PDF	BCR108 VPS05161 EHA07184 Jul-16-2001 BCR108
BCR108 Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1 Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Original	PDF	BCR108. BCR108/F/L3 BCR108T/W BCR108S EHA07174 EHA07184 BCR108 BCR108F BCR108L3 BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
bav99 Abstract: BAV-99S-E6327 bav99 infineon Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W	Original	PDF	BAV99. BAV99S BAV99 BAV99W BAV99U BAV99U BAV-99S-E6327 bav99 infineon
sot23 s1a marking Abstract: marking code S1A sot23 Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906	Original	PDF	SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23
Untitled Abstract: No abstract text available Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see	Original	PDF	BCR141. BCR141S BCR141S: BCR141 BCR141W EHA07184 EHA07174 BCR141S
MARKING CODE CCB Abstract: BC847S Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see	Original	PDF	BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S
BAS16 Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U	Original	PDF	BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
marking code INFINEON Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W	Original	PDF	BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
BCR553 Abstract: BCR108W sot323 BCR133 SOT-23 cimax Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W	OCR Scan	PDF	10mA/5V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR553 BCR108W sot323 SOT-23 cimax
Sot-363 whs Abstract: marking code WHs Text: SIEMENS BCR108S NPN Silicon D igital Transistor Array • Switching circuit, inverter, interface circuit, 4 5_ _ driver circuit • Two galvanic internal isolated Transistors in on package » Built in bias resistor (R1=2.2kß, R2=47k£i) 3 2 1 BCR108S WHs	OCR Scan	PDF	BCR108S VPS05604 Q62702-C2414 OT-363 Sot-363 whs marking code WHs

Privacy Settings

BCR108 Search Results

BCR108 Price and Stock

Infineon Technologies AG BCR108E6327HTSA1

Infineon Technologies AG BCR-108-B6327

Vishay Electro-Films BCR1080AFMAHWS

Infineon Technologies AG BCR-108T-E6327

Infineon Technologies AG BCR-108L3-E6327

BCR108 Datasheets (78)

BCR108 Datasheets Context Search

BCR108W

BCR108W

BCR108

BCR108

marking WHs

BCR108S

marking WHS sot23

BCR108

BCR108T

Untitled

BCR108S

BCR108

Untitled

BCR108

BCR108

BCR108

bav99

sot23 s1a marking

Untitled

MARKING CODE CCB

BAS16

marking code INFINEON

BCR553

Sot-363 whs