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    MARKING WCS SOT Search Results

    MARKING WCS SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING WCS SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q62702-C2286

    Abstract: No abstract text available
    Text: BCR 133W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2=E 3=C SOT-323


    Original
    Q62702-C2286 OT-323 Nov-26-1996 Q62702-C2286 PDF

    WCs MARKING

    Abstract: Q62702-C2256
    Text: BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 133 WCs 1=B Q62702-C2256 Package 2=E 3=C SOT-23 Maximum Ratings


    Original
    Q62702-C2256 OT-23 Nov-26-1996 WCs MARKING Q62702-C2256 PDF

    BCR133W

    Abstract: VSO05561
    Text: BCR133W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original
    BCR133W VSO05561 EHA07184 OT323 Nov-29-2001 BCR133W VSO05561 PDF

    BCR133

    Abstract: No abstract text available
    Text: BCR133 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original
    BCR133 VPS05161 EHA07184 Jul-13-2001 BCR133 PDF

    BCR133

    Abstract: VPS0516
    Text: BCR133 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original
    BCR133 VPS05161 EHA07184 Nov-29-2001 BCR133 VPS0516 PDF

    BCR133W

    Abstract: VSO05561
    Text: BCR133W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original
    BCR133W VSO05561 EHA07184 OT323 Jul-13-2001 BCR133W VSO05561 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR 133 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 133 WCs Pin Configuration 1=B 2=E Package 3=C SOT-23


    Original
    VPS05161 EHA07184 OT-23 Oct-19-1999 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BCR 133W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 133W WCs Pin Configuration 1=B 2=E Package 3=C


    Original
    VSO05561 EHA07184 OT-323 Oct-19-1999 VSO05561 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original
    BCR133. BCR133S: BCR133/F/L3 BCR133T/W BCR133S EHA07184 EHA07174 BCR133 BCR133F BCR133L3 PDF

    BCR108W

    Abstract: BCR133 BCR133F BCR133S BCR133W BCW66 infineon marking code B2 SOT23
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original
    BCR133. BCR133S: BCR133/W/F BCR133S EHA07184 EHA07174 BCR133 BCR133F BCR108W BCR133 BCR133F BCR133S BCR133W BCW66 infineon marking code B2 SOT23 PDF

    BCR133

    Abstract: BCR133F BCR133L3 BCR133S BCR133T BCR133U marking WCs bcr1 l3 sot323
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original
    BCR133. BCR133/F/L3 BCR133T/W BCR133S BCR133U EHA07174 EHA07184 BCR133 BCR133F BCR133L3 BCR133 BCR133F BCR133L3 BCR133S BCR133T BCR133U marking WCs bcr1 l3 sot323 PDF

    BCR133

    Abstract: No abstract text available
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original
    BCR133. BCR133S: BCR133/F/L3 BCR133T/W BCR133S EHA07184 EHA07174 BCR133 BCR133F PDF

    BCR133

    Abstract: infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original
    BCR133. BCR133S: BCR133/W BCR133S EHA07184 EHA07174 BCR133 OT363 BCR133 infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package


    Original
    BCR133. BCR133S: BCR133/W BCR133S EHA07184 EHA07174 BCR133 OT363 PDF

    BCR133

    Abstract: BCR133F BCR133L3 SEMH11
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original
    BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F BCR133 BCR133F BCR133L3 SEMH11 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original
    BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original
    BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 133W NPN Silicon Digital Transistor Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2 =E 3 =C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage ^CEO '/CBO 50 Emitter-base voltage


    OCR Scan
    Q62702-C2286 OT-323 40mguration) 053SbDS D1E071Ã 6E35bD5 Q1BD711 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 133W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10kQ, R2=10k£2 Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2=E 3=C SOT-323


    OCR Scan
    Q62702-C2286 OT-323 300ns; PDF

    Q62702-C2256

    Abstract: 133 MARKING
    Text: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^IO kQ , R2=10kiî Type Marking Ordering Code BCR 133 WCs Pin Configuration Q62702-C2256 1=B Package 2=E 3=C SOT-23


    OCR Scan
    Q62702-C2256 OT-23 Q62702-C2256 133 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10k£l, R2=10kfl Marking Ordering Code Pin Configuration BCR 133 WCs 1 =B Q62702-C2256 Package N> II m Type 3=C


    OCR Scan
    10kfl) Q62702-C2256 OT-23 ambien35b05 a235b05 35b05 PDF

    s89c

    Abstract: MT4C4067 64k DRAM
    Text: MICRON TECHNOLOGY INC SSE D 0 0 Q5 7 2 7 7 3 b • MRN b lllS H T PRELIMINARY MT4C4067 883C 64K X 4 DRAM IC R Ü N MILITARY DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883, Class B 18-Pin DIP (D -6)


    OCR Scan
    MT4C4067 MIL-STD-883, 18-Pin 150mW 256-cycle MIL-STD-883 s89c 64k DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M in S Q M I MT4LC8M8EÎ/B& S MEG X 8 DRAM 8 MEG X 8 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)


    OCR Scan
    096-cycle MT4lCaMtE1/86 DD11213 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration


    OCR Scan
    10kfl) Q62702-C2376 OT-363 01S0713 fi235bD5 PDF