VPS0516 Search Results

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BFN16

Abstract: BFN17 BFN18 BFN19
Contextual Info: BFN16, BFN18 NPN Silicon High-Voltage Transistors 1
Suitable for video output stages in TV sets and 2 switching power supplies 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN17, BFN19 PNP 2 VPS05162 Type

BCR583

Contextual Info: BCR583 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR583 XMs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR183

Contextual Info: BCR183 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23

BFG194

Abstract: VPS05163
Contextual Info: BFG 194 PNP Silicon RF Transistor
For low distortion broadband amplifiers in 4 antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BCP29

Abstract: BCP49 VPS05163
Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

BCR553

Contextual Info: BCR553 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

bat18 a2

Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR133

Contextual Info: BCR133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23

VPS05163

Abstract: BAT70-05
Contextual Info: BAT70-05 Silicon Schottky Diode 4
Parallel connection for maximum I F per package 3
Low forward voltage drop 2
For power supply 1
For clamping and protection VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BCR198

Contextual Info: BCR198 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR198 WRs Pin Configuration 1=B 2=E Package 3=C SOT23

a6s marking

Abstract: A6s sot23 transistor A6S BAS16 bas16ta
Contextual Info: BAS16 3 Silicon Switching Diode
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85

BCR146

Contextual Info: BCR146 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R2=22k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR146 WLs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR153

Contextual Info: BCR153 PNP Silicon Digital Transistor Preliminary data 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR153 WBs Pin Configuration 1=B 2=E Package

BSS119

Abstract: E6327 Q67000-S007 infineon bss119 ID013
Contextual Info: BSS119 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code

marking 93A

Abstract: BFR93A transistor marking R2s
Contextual Info: BFR 93A NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration

s3s sot23

Abstract: BBY51
Contextual Info: BBY51 Silicon Tuning Diode 3
High Q hyperabrupt dual tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings

BAS16TA

Abstract: marking a6s BAS16 A6S SOT23
Contextual Info: BAS16 3 Silicon Switching Diode
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type BAS16 Marking A6s Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR Peak reverse voltage- VRM Forward current

marking BCV

Abstract: bcv 49
Contextual Info: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C

Contextual Info: BCR 119 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 119 WKs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

Contextual Info: BAR 66 Silicon PIN Diode Array 3
Surge protection device
Two PIN diodes, series configuration
Designed for surge overvoltage clamping in antiparallel connection 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAR 66 PMs Pin Configuration 1 = A1 2 = C2 Package