SOT-363 marking 05
Abstract: BAT754L diode smd marking LE
Text: Diodes SMD Type Schottky Barrier Triple Diode BAT754L SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features Very low forward voltage 0.36 Guard ring protected +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Low diode capacitance +0.05
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BAT754L
OT-363
SOT-363 marking 05
BAT754L
diode smd marking LE
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Untitled
Abstract: No abstract text available
Text: Product specification BAT754L SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features Very low forward voltage 0.36 Guard ring protected +0.05 0.95-0.05 Three independent diodes in a small plastic SMD package. +0.05 0.1-0.02 0.1max +0.1
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BAT754L
OT-363
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1N5819 SOD-323
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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1N5817
1N5819
1N5819 SOD-323
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marking 1A7 SOT-23
Abstract: 1a7 sot-23 96x80 SOD123 S32 mark 3p SOT363
Text: APPROVE SHEET Customer: Customer Part Number: 1A1~1A7 PanJit Part Number: 1A1~1A7 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129 NO. 24 , Kang Shan North Rd., Kang Shan Town ,
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168HRS
250HRS
500HRS
-750D
marking 1A7 SOT-23
1a7 sot-23
96x80
SOD123 S32
mark 3p SOT363
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Untitled
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: BY127M~EM513 PanJit Part Number: BY127M~EM513 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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BY127M
EM513
BY513
BY133
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Untitled
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: 1N5334B~1N5378B PanJit Part Number: 1N5334B~1N5378B Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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1N5334B
1N5378B
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Untitled
Abstract: No abstract text available
Text: BAS116TW/BAW156DW/BAV170DW/BAV199S SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts 200mWatts POWER FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2nA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz
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BAS116TW/BAW156DW/BAV170DW/BAV199S
200mWatts
OT-363
MIL-STD-750,
BAS116TW
BAW156DW
BAV170DW
BAV199S
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Untitled
Abstract: No abstract text available
Text: Product specification MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 Extremely Low Minority Carrier Lifetime +0.1 1.25-0.1 0.525 Features 0.36 Very Low Capacitance +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1
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MBD110DWT1
MBD330DWT1
MBD770DWT1
OT-363
D110DW
D330DW
D770DW
tio00
MBD330DWT1
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smd marking m4
Abstract: DIODE T4 marking smd diode M4 smd diode t4 DIODE H5 SMD smd diode marking T4 smd diode H5 T4 diode smd smd diode marking T1 H5 SMD
Text: Diodes SMD Type Dual Schottky Barrier Diodes MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 Extremely Low Minority Carrier Lifetime +0.1 1.25-0.1 0.525 Features 0.36 Very Low Capacitance +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1
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MBD110DWT1
MBD330DWT1
MBD770DWT1
OT-363
D110DW
D330DW
D770DW
MBD330DWT1
smd marking m4
DIODE T4 marking
smd diode M4
smd diode t4
DIODE H5 SMD
smd diode marking T4
smd diode H5
T4 diode smd
smd diode marking T1
H5 SMD
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1.5ke 390
Abstract: 33c marking sot-363 code marking ssi sot-23 VS388-2.5K
Text: APPROVE SHEET Customer: Customer Part Number: 1.5KE_SERIES PanJit Part Number: 1.5KE_SERIES Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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168HRS
250HRS
500HRS
-750D
1.5ke 390
33c marking sot-363
code marking ssi sot-23
VS388-2.5K
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Untitled
Abstract: No abstract text available
Text: BC847CS/BC857CS GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 150 mW FEATURES • General Purpose Amplifier Applications • Collector Current IC = -100mA • MECHANICAL DATA Case: SOT-363 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.006 grams
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BC847CS/BC857CS
-100mA
OT-363
MIL-STD-750
BC847CS
BC857CS
BC847CS
BC857CS
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KBP 2060
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: 1SMA4729 SERIES PanJit Part Number: 1SMA4729 SERIES Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Kaori Huang DATE: JUL.16.2005 DATE: JUL.16.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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1SMA4729
1SMA4764
-750D
KBP 2060
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2n7002kdW
Abstract: No abstract text available
Text: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns
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2N7002KDW
500mA
200mA
OT-363
2002/95/EC
OT-363
MIL-STD-750,
200mA
2n7002kdW
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BAV199S
Abstract: No abstract text available
Text: BAS116TW/BAW156DW/BAV170DW/BAV199S SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts 200mWatts POWER FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz
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BAS116TW/BAW156DW/BAV170DW/BAV199S
200mWatts
2002/95/EC
OT-363
MIL-STD-750,
BAS116TW
BAW156DW
BAV170DW
BAV199S
BAV199S
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PJ4N
Abstract: PJ4N3KDW MARKING GA SOT-363 DM800
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference
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2002/95/EC
OT-363
PJ4N
PJ4N3KDW
MARKING GA SOT-363
DM800
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MARKING PW
Abstract: BAV99BRW sot363 XI
Text: BAV99BRW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • Easily Connected As Full-Wave Bridge • In compliance with EU RoHS 2002/95/EC directives
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BAV99BRW
2002/95/EC
OT-363,
MIL-STD-750,
MARKING PW
BAV99BRW
sot363 XI
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Untitled
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference
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OT-363
RB500V-40
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PJ4N
Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance
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2002/95/EC
IEC61249
OT-363
RB500V-40
PJ4N
marking code ga sot 363
MARKING CODE LA sot363
sot-363 marking DS
marking CODE GA sot363
ZE marking sot-363
SOT 363 marking CODE LA
sot363 XI
PJ4N3KDW
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sot363 XI
Abstract: No abstract text available
Text: BAV99BRW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY SOT-363 Unit：inch mm • Fast Switching Speed • Ultra-Small Surface Mount Package 0.087(2.20) 0.074(1.90) • For General Purpose Switching Applications 0.010(0.25) 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20)
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BAV99BRW
OT-363
OT-363,
MIL-STD-750,
sot363 XI
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PJ4N
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)
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diode smd marking SD
Abstract: SMD kl7 QW-BA015 smd schottky diode sot363 marking KLB smd marking rl SMD PI SMD 24 oe G marking CDBV6-54AD-G
Text: c o A tc m r SMD Schottky Barrier Diode Arrays S M D D io d e s S p e c ia lis t CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 - L o w f o r w a r d v o l t a g e d ro p. -Fast switching. -Ultra-small surface mount package.
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CDBV6-54T/AD/CD/SD/BR-G
OT-363,
MIL-STD-202,
OT-363
QW-BA015
CDBV6-54T/AD/CD/SD/BR-G)
ta-75Â
ta-25Â
ta--40Â
QW-BA015
diode smd marking SD
SMD kl7
smd schottky diode sot363
marking KLB
smd marking rl
SMD PI
SMD 24 oe
G marking
CDBV6-54AD-G
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marking code 04 sot-363
Abstract: marking A SOT363 marking code st sot SOT 363 marking L HSMP-389L marking 06 Surface Mount SOT-363
Text: HEW LETT I & Ü PA CK A RD Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-389L/T/U Features • D io d es O ptim ized for: Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-363 (S C -70)P ack age
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OT-363
SC-70,
HSMP-389L/T/U
HSMP-389L/T/U
HSMP-389A-TR1*
HSMP-389A-BLK*
5966-2028E
marking code 04 sot-363
marking A SOT363
marking code st sot
SOT 363 marking L
HSMP-389L
marking 06 Surface Mount SOT-363
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Untitled
Abstract: No abstract text available
Text: TfiJH H E W L E T T WL'eM PA C K A R D Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP 389L/R/T/U/V Features • Unique configurations in surface mount SOT-363 package - Add flexibility - Save board space - Reduce cost
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OT-363
SC-70,
HSMP-386L
389L/R/T/U/V
HSMS-389aâ
HSMP-389a-TR2*
HSMP-389a-TRl*
HSMP-389a-BLK*
HSMP-386L-TR2
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LT 816
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS PHILIPS Philips Semiconductors Product specification
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115104/00/02/pp8
LT 816
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