MARKING M3 TRANSISTOR Search Results

LDTC143ZET1G

Abstract: marking m3 transistor SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC143ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

fairchild marking codes sot-23

Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Contextual Info: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value -50

BC846ALT1

Abstract: BC846BLT1 BC846 BC847 BC847ALT1 BC847BLT1 BC848 BC849 BC850 BC850BLT1
Contextual Info: LESHAN RADIO COMPA N Y, LTD. General Purpose Transistors NPN Silicon BC846ALT1,BLT1 BC847ALT1,BLT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current Peak value

BC846BLT1

Abstract: BC848C BC846 BC846ALT1 BC847 BC847ALT1 BC847BLT1 BC848 BC849 BC850
Contextual Info: General Purpose Transistors NPN Silicon BC846ALT1,BLT1 BC847ALT1,BLT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current Peak value Emitter Current(Peak value)

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

transistor ac51

Abstract: WF020000 SCM0100200 WF141100 WF-141 UE100 EN61000-4-2 55GB WF191100 WF070000
Contextual Info: celduc r e l a i S/CON/SCM0100200/D/28/11/03 s Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM0100200 ! Latest MOSFET technology generation. ! Ultra low on-state resistance. ! New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

transistor ac51

Abstract: NFEN55011 EN61000-4-2 SCM030200
Contextual Info: celduc r e l a i S/CON/SCM030200/B/07/06/04 s PRELIMINARY !! Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM030200 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

IEC60947-1

Abstract: S20DC100 NFEN55011
Contextual Info: NEW Series S20DC100 Output to 100A, 200 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

2SA812

Abstract: S1623 T812
Contextual Info: T812 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to S1623 Collector-Base Voltage :Vcbo= -50V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -50 V Collector-Emitter Voltage

Marking ae SOT89

Abstract: marking AE SOT-89 C817 BTB1424AM3 BTD2150AM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817M3A Issued Date : 2003.10.05 Revised Date :2005.10.04 Page No. : 1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB1424AM3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA.

1D-S marking

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: • □ t>E D N AUER P H IL IP S /D IS C R E T E MAINTENANCE TYPE ■ t.b 5 3 i3 ]> ■ OOlMTSS ■ LKE1004R for new design use LTE21009R T - 3 3 - OS" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a common-emitter class-A linear power amplifier up to 1 GHz.

PKB20010U

Contextual Info: J_L N AtlER PHILIPS/DISCRETE QbE D • bbS3TBl DDlSOfl? 3 ■ “ II PKB 20010U MAINTENANCE TYPE _ /V T -33-01 MICROWAVE POWER TRANSISTOR N-P-N silicon transistor fo r use in space, m ilitary and professional applications. It •

Contextual Info: N ANER PHILIPS/DISCRETE ObE D • ^ 5 3 1 3 1 0014^45 7 ■ LKE21050T MAINTENANCE TYPE for new design use LVE21050R T -3 1 ~ 0 7 MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.

BTA1664M3

Abstract: Marking BA SOT89
Contextual Info: CYStech Electronics Corp. Spec. No. : C315M3 Issued Date : 2005.01.25 Revised Date : 2005.11.10 Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1664M3 Features • Low VCE sat , VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package

C817

Abstract: BTB772AM3 BTD882AM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C817M3-H Issued Date : 2003.06.17 Revised Date:2005.08.19 Page:1/5 Low VCE sat PNP Epitaxial Planar Transistor BTB772AM3 Features • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics

marking 3A sot-89

Abstract: BTD2098LM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C850M3 Issued Date : 2004.02.27 Revised Date :2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LM3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics

Contextual Info: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

Contextual Info: J_£, N AMER PHILIPS/DISCRETE ObE D • bb53T31 0014^3=1 1 ■ LKE2015T MAINTENANCE TYPE for new design use LTE21015R T-23-^5" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

DIN125A

Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
Contextual Info: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:

Contextual Info: I 1 N AMER PHILIPS/DIS.CRETE MAINTENANCE TYPE ObE D bbSBTBl 0014^51 2 • LKE32002T LKE32004T T -Si-os' ~ MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 QD1S013 7 MAINTENANCE TYPE LV3742E24R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier from 3,7 to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide

c815

Abstract: C815M sot-89 MARKING CODE 4A BTB1386M3 BTD2098M3
Contextual Info: CYStech Electronics Corp. Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features • Low VCE sat , VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics

dk marking code sot-89

Abstract: marking dk sot-89 BTC4672M3 CYStech Electronics
Contextual Info: CYStech Electronics Corp. Spec. No. : C819M3 Issued Date : 2005.08.16 Revised Date :2005.10.05 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BTC4672M3 Features • Low saturation voltage, typically VCE sat =0.1V at IC/IB=1A/50mA • Excellent DC current gain characteristics