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    MARKING HU SOT23 Search Results

    MARKING HU SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    MARKING HU SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking hy

    Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
    Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY


    Original     		STT3PF20V OT23-6L OT23-6L transistor marking hy PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V PDF

    ta 9690

    Abstract: No abstract text available
    Text: DDZX9682 - DDZX9717 SURFACE MOUNT PRECISION ZENER DIODE SPICE MODEL: DDZX9688 DDZX9689 DDZX9690 DDZX9691 DDZX9692 DDZX9693 DDZX9694 DDZX9696 DDZX9697 DDZX9699 DDZX9700 DDZX9702 Features • · · · 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ


    Original     		DDZX9682 DDZX9717 DDZX9688 DDZX9689 DDZX9690 DDZX9691 DDZX9692 DDZX9693 DDZX9694 DDZX9696 ta 9690 PDF

    DDZX9698

    Abstract: Zener Diode SOT-23
    Text: DDZX9682 - DDZX9717 Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23 A B C D E Mechanical Data G H


    Original     		DDZX9682 DDZX9717 300mW OT-23 OT-23, J-STD-020A MIL-STD-202, DDZX9707 DDZX9713 DDZX9698 Zener Diode SOT-23 PDF

    Zener Diode SOT-23

    Abstract: marking hw sot23
    Text: DDZX9682 - DDZX9717 Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23 A B C D E Mechanical Data G H


    Original     		DDZX9682 DDZX9717 300mW OT-23 OT-23, J-STD-020A MIL-STD-202, DDZX9707 DDZX9713 Zener Diode SOT-23 marking hw sot23 PDF

    code marking HY SOT-23

    Abstract: max 9694 e zener diode marking 182 DDZX9691 ALL ZENER H 48 zener diode type marking code 30C ZENER 18 2 DDZX9682 DDZX9689
    Text: DDZX9682 - DDZX9717 SURFACE MOUNT PRECISION ZENER DIODE Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current


    Original     		DDZX9682 DDZX9717 300mW OT-23 OT-23, J-STD-020A MIL-STD-202, DDZX9707 DDZX9713 DDZX9713 code marking HY SOT-23 max 9694 e zener diode marking 182 DDZX9691 ALL ZENER H 48 zener diode type marking code 30C ZENER 18 2 DDZX9689 PDF

    Untitled

    Abstract: No abstract text available
    Text: AME AME4041 Shunt Bandgap Voltage Reference n General Description The AME4041 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ±0.5% initial tolerance. The design of the AME4041


    Original     		AME4041 AME4041 OT-23 OT-23A OT-23A 2037-DS4041- PDF

    AME40

    Abstract: No abstract text available
    Text: AME AME40 n General Description The AME40 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ±0.50% initial tolerance. The design of the AME40 allows for a large range of load capacitances and


    Original     		AME40 AME40 OT-23. OT-23, 2003/2037-DS40-H PDF

    AME385-2.5

    Abstract: No abstract text available
    Text: AME AME385-2.5 n General Description The AME385-2.5 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% and ± 0.80% initial tolerance. The design of the AME385-2.5 allows for a large range of load


    Original     		AME385-2 OT-23. OT-23, 2003/2037-DS385-2 AME385-2.5 PDF

    AME385-1.2

    Abstract: No abstract text available
    Text: AME AME385-1.2 Shunt Bandgap Voltage Reference n General Description The AME385-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.5% initial tolerance. The design of the


    Original     		AME385-1 OT-23. OT-23, 2003/2037-DS385-1 AME385-1.2 PDF

    AME41-1.2

    Abstract: No abstract text available
    Text: AME AME41-1.2 n General Description The AME41-1.2 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 30µA to 20mA current range. Each circuit is trimmed at wafer sort to provide a ± 0.50% initial tolerance. The design of the


    Original     		AME41-1 OT-23. OT-23, 2003/2037-DS41-1 AME41-1.2 PDF

    PT7M7479

    Abstract: marking AA sot23-5 Marking lb sot23-5 pericom date code marking PT7M7479L HX SOT23-5 TOP marking RST sot23 marking hx PT7M7809
    Text: Preliminary Data Sheet PT7M7479 Voltage Detector with Adjustable Hysteresis |


    Original     		PT7M7479 PT0182 marking AA sot23-5 Marking lb sot23-5 pericom date code marking PT7M7479L HX SOT23-5 TOP marking RST sot23 marking hx PT7M7809 PDF

    150X1

    Abstract: No abstract text available
    Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		2N7002 OT-23 VNDS06 150X1, 150X1 PDF

    sot 23 zwa

    Abstract: KN4403S KN4402S transistor marking SA p sot-23 SOT23 MARKING ZWA Marking ZWA SOT-23 zwa sot23
    Text: KEC KOflEA ELECTRONICS CO.LTD. SEMICONDUCTOR TECHNICAL DATA KN4402S/4403S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • Complementary to KN4400S/4401S. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage


    OCR Scan     		KN4402S/4403S KN4400S/4401S. f-140kHz sot 23 zwa KN4403S KN4402S transistor marking SA p sot-23 SOT23 MARKING ZWA Marking ZWA SOT-23 zwa sot23 PDF

    smd glass diode color codes

    Abstract: BA423L SOD-80 DIODE MARKING GREEN AND ORANGE SOD-80 Marking Code RED Color band DIODES GLASS PHILIPS DIODE COLOR BAND MARKING smd diode marking code SM sod80 diodes color code marking code a2 SMD diode COLOR marking codes
    Text: SMD BANDSWITCH DIODES DESCRIPTION • Philips Components bandswitch diodes are intended specifically for use in radio, television, and other tuning applications. Primary attributes are extremely low dynamic capacitance and series resistance. FEATURES ■ Guaranteed maximum dynamic capacitance as low as 1.2


    OCR Scan     		SQD-80 BA423L BA682 BA683 OD-80 OT-23 OT-23 smd glass diode color codes SOD-80 DIODE MARKING GREEN AND ORANGE SOD-80 Marking Code RED Color band DIODES GLASS PHILIPS DIODE COLOR BAND MARKING smd diode marking code SM sod80 diodes color code marking code a2 SMD diode COLOR marking codes PDF

    Untitled

    Abstract: No abstract text available
    Text: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •


    OCR Scan     		BF550 PDF

    6Bp SMD

    Abstract: code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD
    Text: General Purpose SM D * NPN Transistors 11 General Purpose SMD NPN Transistors Description Features Philips C om ponents general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		OT-23 OT-89 OT-143 OT-223 6Bp SMD code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C


    OCR Scan     		BFS17P Q62702-F940 OT-23 0535b05 fi235b05 500MHz flE35b05 PDF

    smd code A1t

    Abstract: A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN PMBD2835 PMBD2836 marking H01 a1t MARKING
    Text: Philips Semiconductors Product specification High-speed double diodes FEATURES PMBD2835; PMBD2836 MARKING • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 35 V and 75 V respectively PINNING MARKING CODE


    OCR Scan     		PMBD2835; PMBD2836 PMD2835, PMD2836 PMBD2835 PMBD2836 711DflEb smd code A1t A1T SMD diode A1t smd 10j smd diode 134 B 360 SMD smd marking code KN marking H01 a1t MARKING PDF

    BC818-16R

    Abstract: BC817-16R sot-23 npn marking code cr 48mT C817 BC807 BC808 BC817 BC817-16 BC818
    Text: N AMER PHILIPS/DISCRETE OLE D • bhS3T3]i OOISSGT 3 ■■ BC8Ï7 BC818 T -^ 9 -1 7 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.


    OCR Scan     		BC817 BC818 OT-23 BC807; BC808; BC817 35MHz BC818-16R BC817-16R sot-23 npn marking code cr 48mT C817 BC807 BC808 BC817-16 BC818 PDF

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC1223 TC1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for


    OCR Scan     		TC1223 TC1224 TC1223 TC1224 LP2980. OT-23A-5 SC-74A) PDF

    BFT92

    Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
    Text: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,


    OCR Scan     		BFT92 BFR92 BFR92A. Colle131 Z62771 BFT92 BFR92A 727 Transistor power values BFT92V PDF

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


    OCR Scan     		Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp PDF

    smd code marking 2A sot23

    Abstract: MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23
    Text: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection


    OCR Scan     		OT-89 OT-223 PMBT2907A PMBT3906 PMBT4403 PMBTA55 PMBTA56 PMBTA70 PXT2907A PXT3906 smd code marking 2A sot23 MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23 PDF

    el 847

    Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
    Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j


    OCR Scan     		t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12 PDF